Reactive ion etching of trenches in 6H-SiC

In this paper, we report the reactive ion etching (RIE) of trenches in 6H-silicon carbide using SF₆/O₂. The plasma parameters: etchant composition, gas flow rate, chamber pressure, and radio frequency power were optimized to obtain a maximum etch rate of 360Å/min. The etch rate of SiC was found to exhibit a direct correlation with the dc self bias except when the O₂ percentage was varied. Trenches were fabricated using the optimized conditions. It was found that the trench surface was extremely rough due to the aluminum micromasking effect. To overcome this effect, a Teflon^TM sheet was used to cover the cathode during the experiment. The trenches fabricated using this modification were found to have smooth etched surfaces and sidewalls. The angle of anisotropy of these trenches was approximately 80° which is suitable for device applications.     

Analysis of the infrared transmission data of hydrogenated amorphous silicon film fabricated by high rate PECVD

The optical properties of hydrogenated amorphous silicon thin films prepared by a new thermocatalytic plasma enhanced chemical vapor deposition (PECVD) method are here reported for the first time. The transmission spectrum of the film, deposited at a rate of 1.5 nm/s, was measured between 500 and 1100 nm. The envelopes of the transmission spectrum interference maxima and minima were analyzed to reveal the absorption coefficient α(λ@#@), the refractive indexn(λ), the average thickness of the film (791 nm) and the variation of the thickness (11.4 nm), using an analysis which takes into account film inhomogeneity. The modified Newton's method of numerical analysis was used to obtain the optical parameters. The optical band gap ε₀} was determined to be 1.69 eV from the absorption coefficient spectrum, commensurate with values quoted for lower deposition rate PECVD films. The value for ε₀}, the small variation of the film thickness, and a value for the defect density of 3.7 x 10¹⁵}cm^-3} determined for similar material in other work indicate that the thermocatalytic PECVD method can produce acceptable quality films at a high deposition rate.     

晶体缺陷对多晶硅太阳电池反向漏电影响研究

多晶硅太阳电池所使用的多晶硅材料往往因铸造过程中温度、应力等方面控制不佳,导致晶体缺陷形成。本文通过研究“黑丝”电池片以及点状烧穿电池片这两种在电学性能上表现为严重的反向线性漏电的异常电池片,对比观察其异常所处位置的表面及其解理断面的微观结构,发现导致这两种反向漏电现象出现的本质原因是由于其所处位置的硅片结构存在位错或其他晶体缺陷。这种由于晶体缺陷导致的反向漏电现象会使电池在工作过程中局部过热,给光伏发电系统带来巨大隐患。     

Formation of a low reflective surface on crystalline silicon solar cells by chemical treatment using Ag electrodes as the catalyst

A new method was developed for making a porous silicon layer as an anti-reflective coating on the top of crystalline silicon solar cells. The porous silicon layer was formed in a mixed solution of H₂O₂ and HF by using screen-printed Ag front electrodes as the catalyst. With the help of the catalytic effect, porous silicon layers were formed by treatment in a solution chemically milder than conventional solutions. The multi-crystalline silicon solar cell covered with the porous silicon layer showed a surface reflectance below 15% in a wavelength region of 400–800 nm.     

Characterization of Epitaxial Indium Nitride Interlayers for Ohmic Contacts to Silicon Carbide

Ohmic contacts to n-type 4H- and 6H-SiC without postdeposition annealing were achieved using an interlayer of epitaxial InN beneath a layer of Ti. The InN films were grown by reactive dc magnetron sputtering at 450°C, whereas the Ti films were deposited by electron-beam evaporation at room temperature. The InN films were characterized by x-ray diffraction (XRD), secondary electron microscopy (SEM), cross-sectional transmission electron microscopy (TEM), and Hall-effect measurements. Both XRD and TEM observations revealed that the Ti and InN films have epitaxial relationships with the 6H-SiC substrate as follows: (0001)[]_Ti∥(0001)[]_InN∥(0001)[]_6H-SiC. The Ti/InN/SiC contacts displayed ohmic behavior, whereas Ti/SiC contacts (without an InN interlayer) were nonohmic. These results suggest that InN reduces the Schottky barrier height at the SiC surface via a small conduction-band offset and support previous reports of an electron accumulation layer at the surface of InN.     

黑硅微结构光敏二极管

与平面硅相比,黑硅对0.25～2.5μm波长光具有高吸收特性.为了提高硅光敏二极管的近红外灵敏度和响应时间,采用金属辅助刻蚀在光敏二极管探测器背面制作了黑硅微结构.在1 064 nm波长,探测器红外响应达到0.518 A/W,比常规探测器量子效率提高了65％.     

WC类硬质合金胎体材料的试验研究

介绍一种WC类硬质合金胎体材料配方 ,在胎体材料中添加了微量磷元素 ,通过其活化作用 ,使硬质合金材料在 1 0 60℃温度下烧结成型 ,并通过调节配方中的Co -Ni含量 ,使其具备了所需要的机械性能。并扼要介绍了以YG1 2 -Ni8-P0 .2硬质合金为胎体材料的人造金刚石复合体钻头的试验情况。     

激光诱导化学气相沉积纳米硅的红外光谱

对激光化学气相沉积纳米硅的红外光谱进行了研究，结合红外光声光谱考察了退火处理对其红外光谱吸收峰位置的影响，对纳米硅的红外吸收峰进行了标识和讨论。     

超声洁牙器换能器的研究

本文简要叙述了超声洁牙用换能器的结构设计与工作原理,并提出了适用于换能器的压电陶瓷材料的性能要求。最后列出了这样的洁牙器的系列试验,包括临床应用的结果情况。     

Effect of sintering and poling conditions on the properties of [Pb,Sr][(Zr,Ti)(Zn,Nb)(Mg,Nb)]O3 piezoelectric ceramics system

The (Pb,Sr)[(Zr,Ti)(Zn,Nb)(Mg,Nb)]O₃ piezoelectric ceramic system with compositions close to the morphotropic phase boundary (MPB) was studied. The dielectric and piezoelectric properties of the system Pb_0.96Sr_0.04[(Zr_1-yTi_y)_0.74(Zn_1/3Nb_2/3)_0.06(Mg_1/3Nb_2/3)_0.20]O₃ were investigated, where the compositions of 0.44 ≤y ≤ 0.60 were selected. From the results of XRD and piezoelectric measurement, it was supposed that the composition withy = 0.50 - 0.51 corresponded to MPB between tetragonal and pseudocubic phase. By the way of the variation of the fabrication process, the influence of sintering and poling processes on the properties of the ceramic were studied, and we expected to find the optimal conditions of these processes. Some developed phenomena or models were introduced. After the optimal choice of the process conditions, the planar coupling factor close to 0.73 and the dielectric constant close to 3000 can be approached simultaneously in this multicomponent system.