Cd-Ni电池低电压的改善

发泡式镉镍电池产品中，相当部分电池在搁置一月左右之后，开路电压下降至1．00-1．10V。分析了电压下降的原因；提出了有效的解决措施；检测改进后的从K900型电池的荷电保持能力和开路电压，结果表明，以上措施可以有效防止镉镍电池的低电压现象。     

废旧镉镍电池的再利用

提出了一种废旧镉镍电池再利用的新工艺,通过控制硫酸溶液的温度和酸度等因素,在浸出阶段实现了Cd与Ni的分离;利用浸出的镍、钴溶液为原料,通过配合物法制备出了球形Ni(OH)2,并由XRD实验得以证明,充放电实验表明由该球形Ni(OH)2制备的镍电极具有较好的电性能。     

碱性二次电池涂膏式镉负极的表面改性

涂膏式镉负极因为制造工艺简单 ,成本低而得到广泛应用 ,然而其大电流充放电能力和循环使用寿命比烧结式镉负极差。通过在镉负极表面镀覆一层金属镍 ,提高了涂膏式镉负极的大电流充放电能力 ,电极容量也得到了提高。     

无汞无镉高氯化锌型锌锰电池的研究

含汞含镉高氯化锌型锌锰电池除去了汞、镉等具有严重公害的元素后,在锌筒中加入代汞、代镉的金属添加剂并与无汞浆层纸配合,使高氯化锌型电池实现无汞无镉化。为降低成本,将锌筒中的无机缓蚀剂转移到浆层纸中,制成无汞无镉电池用浆层纸,实现无汞无镉锌锰电池产业化。     

松花湖沉积物Cd和Hg污染风险灰色预测

根据松花湖沉积物平均沉积速率,将松花湖沉积柱镉(Cd)和汞(Hg)元素质量分数实测数据进行线性插值,得到松花湖沉积物Cd和Hg质量分数变化的时间序列数据.运用灰色系统理论建模方法,采用1943-2006年时段数据,建立松花湖沉积物Cd和Hg质量分数演化的灰色GM(1,1)预测模型.残差检验、后验差检验和关联度检验均表明,该模型精度较高,可用于松花湖沉积物Cd和Hg质量分数中长期预测.由预测结果可知,松花湖沉积物Cd和Hg质量分数有逐年缓慢递增趋势,虽然在短期内不会出现明显的Cd或Hg污染;但如果不采取及时有效措施,控制Cd和Hg的污染源,松花湖沉积物将有Cd、Hg污染不断加剧的风险.     

用低温Raman散射光谱研究不同处理的CdZnTe表面

利用低温Ｒａｍａｎ散射光谱分析，比较了４种典型处理的Ｃｄ０．９６Ｚｎ０．０４Ｔｅ表面声子散射信号和表面元素沉积的变化。对－２２０－－９０ｃｍ＾－１的反斯托克斯分量进行分析得出，ＢＭ液腐蚀后的表面晶格完整性最好；ＬＢ液处理有利于进一步改善表面粗糙度和表面漏电流，离子轰击的表面缺陷多，质量差，但对制备良好欧姆接触的电极有现实意义，实验证明Ｒａｍａｎ散射光谱对于探测表面上元素的沉积和分析表面质量的变化，     

缝管捕集原子吸收光谱法测定镉和银的研究和应用

报道了采用石英缝管捕集原子吸收光谱法测定镉和银的最佳实验条件、灵敏度、检出极限,并通过实验验证了缝管的捕集作用.应用该方法测定水样中的微量镉和银,灵敏度可分别提高60.97、31.47倍,加标回收率在91.3%～104.8%,结果令人满意.     

基于苝酰亚胺席夫碱荧光探针的制备及其对镉离子的选择性识别研究

利用C=N异构机制,以苝酰亚胺为骨架设计合成了一种香草醛席夫碱荧光探针,通过红外光谱和质谱对其结构进行了表征。同时利用紫外-可见光谱仪和荧光光谱仪对其性能进行了研究,研究结果表明,当使用490 nm的激发波长对该化合物进行激发时,化合物对Cd^2+表现出良好的选择性,在530 nm处的荧光发射峰强度显著上升。干扰实验表明,Zn^2+、Cu^2+和Hg^2+对Cd^2+的识别存在干扰,大多数金属离子对识别过程影响不大。荧光实验数据分析结果表明两者之间形成了1∶1的键合关系,键合常数lgK为5.37。该荧光探针对Cd^2+的检出限为0.2 nmol/L(约22.8 ng/L),可以满足水体中镉离子的检测要求。     

CdZnTe substrate producibility and its impact on IRFPA yield

The need for cost effective production of HgCdTe infrared detectors and focal plane assemblies has led to increased attention to the availability of high quality large-area CdZnTe substrates. Reasonable yield of large-area substrates (≥4 cm×6 cm format) is necessary for fabrication of focal plane assemblies (FPAs) now in production, and for future infrared (IR) detectors which are growing in size and complexity. Raytheon’s infrared materials producibility (IRMP) program has addressed this issue, after identifying critical drivers of FPA yield coming from substrates, and targeted certain improvements in substrate process steps for highest impact on large-area substrate yield. Three specific areas of improvements in the substrate process were addressed: (1) compounding of a large 6 kg charge of CdTe; (2) vertical Bridgman growth of 92 mm diameter CdZnTe boules in both quartz and pyrolytic boron nitride (PBN) crucibles; and (3) optimized Cd overpressure control during growth and cool-down of the boule. It was shown that the Cd overpressure and the cooling schedule had the strongest effects on defect populations. The resulting improvements include a 33% increase in wafer yield per unit starting weight, an estimated 50% reduction in substrate cost per cm², better morphology of epitaxial HgCdTe layers, and improved yield of satisfactory IR detectors. The criteria for selecting substrates have also improved as a result of this work. In addition, photovoltaic detectors were fabricated on wafers from a variety of sources, and tested. Results compare favorably with those on baseline (earlier process) substrates.     

Study on ALD In2S3/Cu(In,Ga)Se2 interface formation

The formation of the interface between In₂S₃ grown by atomic layer deposition (ALD) and co‐evaporated Cu(In,Ga)Se₂ (CIGS) has been studied by X‐ray and UV photoelectron spectroscopy. The valence band offset at 160°C ALD substrate temperature was determined as −1·2±0·2 eV for CIGS deposited on soda‐lime glass substrates and −1·4±0·2 eV when a Na barrier substrate was used. Wavelength dependent complex refractive index of In₂S₃ grown directly on glass was determined from inversion of reflectance and transmittance spectra. From these data, an indirect optical bandgap of 2·08±0·05 eV was deduced, independent of film thickness, of substrate temperature and of Na content. CIGS solar cells with ALD In₂S₃ buffer layers were fabricated. Highest device efficiency of 12·1% was obtained at a substrate temperature of 120°C. Using the bandgap obtained for In₂S₃ on glass and a 1·15±0·05 eV bandgap determined for the bulk of the CIGS absorber, the conduction band offset at the buffer interface was estimated as −0·25±0·2 eV (−0·45±0·2 eV) for Na‐containing (Na‐free) CIGS. Copyright © 2005 John Wiley & Sons, Ltd.