纳米TiO_2富集分离石墨炉原子吸收法测定食品中的镉

以石墨炉原子吸收为检测手段,研宄纳米TiO2对金属Cd的吸附性能,考察吸附和洗脱的主要影响因素.结果表明:在pH 8～10范围内,纳米TiO2对金属Cd具有良好的吸附性,吸附率达到95.0%,3 mol/L的硝酸即可将纳米TiO2吸附的Cd完全洗脱.在优化的试验条件下,静态吸附量为15.9 mg/g.本法的检出限为(3(σ)2.02×10-13g,RSD为3.18%～5.21%,富集倍数为75倍,加标回收率在98.5%～100.4%之间.     

稀酸温和提取直接进样快速测定大米中镉含量的研究

建立了常温条件下利用稀酸温和提取直接进样石墨炉原子吸收光谱法快速测定大米中镉的方法。考察了粉碎粒径、硝酸浓度、提取时间、固液比例等因素的影响,优化了灰化温度和原子化温度等仪器条件,确定了大米中镉元素测定的最佳条件。结果表明,常温条件下采用稀硝酸提取大米中的镉元素,浸提率在98.5%~100%之间,加标回收率达到93.0%~100%之间,精密度小于5%,方法的检出限和定量限分别为0.016μg/L和0.048μg/L,样品处理时间可缩短至20 min内,与经典的微波消解原子吸收光谱法和微波消解ICP-MS法比较,各类大米中镉元素的测定值无显著性差异(P>0.05)。     

300MW合缸汽轮机高中压转子现场直轴

300MW合缸汽轮机组的高中压转子是国内目前运行汽轮机的较大转子之一,此类转子轴的直径大、跨距长,校直难度较大。本文论述了华北电科院使用可移动式直轴设备,采用目前较先进的松弛法直轴,在电厂厂房检修场地内成功地完成了某电厂6号机组高中压转子的直轴工作,为机组的抢修节约了时间,其经济效益和社会效益巨大。     

High-efficiency, Cd-free copper–indium–gallium–diselenide/polymer hybrid solar cells

The use of a semiconducting polymer as a buffer layer replacement for CdS in traditionally all-inorganic copper–indium–gallium–diselenide (CIGS)-based solar cells is reported. The semiconducting polymer used is poly(benzimidazobenzophenanthroline) (BBL), which has physical and electronic properties that facilitate a suitable junction between the CIGS and the top electrode. We report on the fabrication, physical properties and photovoltaic characteristics of such Cd-free organic–inorganic devices, which have 6% power-conversion efficiencies.     

Hg_（1－x）Cd_xTe液相外延薄膜的光致发光

用红外光荧光测量分析了Ｈｇ１－ｘＣｄｘＴｅ液相外延薄膜的发光特性，观察到局域激子及束缚激子发光．当外延层减薄至２μｍ后，ＰＬ信号的峰位将向高能方向移动，这是由于外延薄膜纵向组份不均匀引起的     

Passivation of HgCdTe p-n diode junction by compositionally graded HgCdTe formed by annealing in a Cd/Hg atmosphere

Cadmium telluride (CdTe) is being widely used for passivating the HgCdTe p-n diode junction. Instead of CdTe, we tried a compositionally graded HgCdTe as a passivation layer that was formed by annealing an HgCdTe p-n junction in a Cd/Hg atmosphere. During annealing, Cd diffuses into HgCdTe from the Cd vapor, while Hg diffuses out from HgCdTe, forming compositionally graded HgCdTe at the surface. The Cd mole fraction at the surface was constant regardless of the annealing temperature in the range of 250–350°C. Capacitance versus voltage (C-V) curves for p-type HgCdTe that were passivated with compositionally graded HgCdTe formed by Cd/Hg annealing at 260°C showed a smaller flat-band voltage than the one passivated by thermally deposited CdTe, indicative of the better quality of the passivation. A long-wave infrared (LWIR) HgCdTe p-n junction diode passivated by compositionally graded HgCdTe showed about a one order of magnitude smaller R_dA value than the one passivated by thermally deposited CdTe, confirming the effectiveness of the compositionally graded HgCdTe as a passivant.     

CdZnTe substrate producibility and its impact on IRFPA yield

The need for cost effective production of HgCdTe infrared detectors and focal plane assemblies has led to increased attention to the availability of high quality large-area CdZnTe substrates. Reasonable yield of large-area substrates (≥4 cm×6 cm format) is necessary for fabrication of focal plane assemblies (FPAs) now in production, and for future infrared (IR) detectors which are growing in size and complexity. Raytheon’s infrared materials producibility (IRMP) program has addressed this issue, after identifying critical drivers of FPA yield coming from substrates, and targeted certain improvements in substrate process steps for highest impact on large-area substrate yield. Three specific areas of improvements in the substrate process were addressed: (1) compounding of a large 6 kg charge of CdTe; (2) vertical Bridgman growth of 92 mm diameter CdZnTe boules in both quartz and pyrolytic boron nitride (PBN) crucibles; and (3) optimized Cd overpressure control during growth and cool-down of the boule. It was shown that the Cd overpressure and the cooling schedule had the strongest effects on defect populations. The resulting improvements include a 33% increase in wafer yield per unit starting weight, an estimated 50% reduction in substrate cost per cm², better morphology of epitaxial HgCdTe layers, and improved yield of satisfactory IR detectors. The criteria for selecting substrates have also improved as a result of this work. In addition, photovoltaic detectors were fabricated on wafers from a variety of sources, and tested. Results compare favorably with those on baseline (earlier process) substrates.     

Cd_(1-x)Zn_xTe多晶薄膜的制备、性能与光伏应用

用共蒸发法制备了 Cd1 - x Znx Te多晶薄膜 ,薄膜结构属立方晶系空间群 F4 3m.通过透射光谱的测量 ,计算光能隙 ,得到室温时薄膜的光能隙随组分 x值的变化满足二次方关系 .作为对异质结界面的修饰 ,提出了有 Cd1 - x-Znx Te过渡层的 Cd S/ Cd Te/ Cd1 - x Znx Te/ Zn Te∶ Cu电池 .并在相同工艺下制备了 Cd S/ Cd Te/ Cd0 .4 Zn0 .6 Te/ Zn Te∶ Cu与 Cd S/ Cd Te/ Zn Te∶ Cu太阳电池 ,发现前者比后者效率平均增加了 35 .0 % .     

Electrical characteristics and inhomogeneous barrier analysis of Au-Be/p-InSe:Cd Schottky barrier diodes

We have identically prepared Au-Be/p-InSe:Cd Schottky barrier diodes (SBDs) (21 dots) on the InSe:Cd substrate. The electrical analysis of Au-Be/p-InSe:Cd structure has been investigated by means of current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) measurements at 296 K temperature in dark conditions. The effective barrier heights and ideality factors of identically fabricated Au-Be/p-InSe:Cd SBDs have been calculated from their experimental forward bias current-voltage (I-V) characteristics by applying a thermionic emission theory. The BH values obtained from the I-V characteristics have varied between 0.74 eV and 0.82 eV with values of ideality factors ranging between 1.49 and 1.11 for the Au-Be/p-InSe:Cd SBDs. It has been determined a lateral homogeneous barrier height value of approximately 0.82 eV for these structures from the experimental linear relationship between barrier heights and ideality factors. The Schottky barrier height (SBH) value has been obtained from the reverse-bias C-V characteristics of Au-Be/p-InSe:Cd SBD for only one diode. At high currents in the forward direction, the series resistance effect has been observed. The value of series resistance has been determined from I-V measurements using Cheung’s and Norde’s methods.     

双基体线性敏感陶瓷材料的研究(英文)

重点研究由CdO-SnO2-WO3系列(以下简称Cd-Sn-W)和CdO-Sb2O3-WO3系列(以下简称Cd-Sb-W)及由它们共同组成的双基体三相(Cd2Sb2O7、CdSnO3、CdWO4)结构线性敏感陶瓷的制备方法。给出了上述半导体陶瓷的电子转移式;分析了半导相Cd2Sb2O7和CdSnO3的导电机理和电阻-温度(R-T)曲线呈线性的机理,并对其他特性进行了深入的分析和研究。