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51.
Zhangchuan Wen Rong Lu Fan Gu Kai Zheng Lijie Zhang Huile Jin Yihuang Chen Shun Wang Shuang Pan 《Advanced functional materials》2023,33(7):2212095
Chiral perovskite materials have intrigued enormous interests because of their appealing chiroptical properties and tailorable non-centrosymmetric structures. However, it remains challenging to realize high-efficiency blue emissive circularly polarized luminescence (CPL) of intrinsic chiral perovskite nanomaterials at room temperature. Herein, a robust and versatile electrospinning strategy is reported for in situ construction of chiral 2D and quasi-2D perovskite nanosheets (PNSs) protected in polymer hybrid nanofibers. It is found that quasi-2D chiral PNS/polymer possesses inherent chirality and enhanced CPL properties at room temperature compared to 2D counterparts. Notably, CPL emission color of chiral quasi-2D PNS/polymer can be tuned from deep blue to sky blue, and a high luminescence dissymmetry values up to −8.0 × 10−3 can be achieved. Different perovskites, polymers, and nanofibrous structures are expanded to explore the universality of polymer protected PNSs. Significantly, compared to spin-coated film, the stabilities of quasi-2D PNS/polymer film are greatly improved due to the effective protection of polymer. The obtained PNS/polymer hybrid nanofiber films can be conveniently implemented for circularly polarized light emitting diode devices. This study may open up a new avenue for the scalable fabrication of chiral perovskite nanomaterials of interest and their applications in the CPL related fields. 相似文献
52.
A. Kadashchuk A. Andreev H. Sitter N.S. Sariciftci Y. Skryshevski Y. Piryatinski I. Blonsky D. Meissner 《Advanced functional materials》2004,14(10):970-978
We report on photoluminescence (PL) and thermally stimulated luminescence (TSL) in highly ordered nanostructures of para‐sexiphenyl (PSP) grown by hot wall epitaxy (HWE). A low‐energy broad band is observed in the PL spectra that can be attributed to the emission from molecular aggregates. While the intrinsic exciton emission in steady‐state PL dominates at low temperatures, the emission from aggregates increases with elevating temperature and its magnitude depends sensitively on film preparation conditions. Time‐resolved PL measurements showed that the aggregate emission decays with a life‐time of ≈ 4 ns, which is approximately an order of magnitude larger than the lifetime of singlet excitons. TSL data suggests the presence of an energetically disordered distribution of localized states for charge carriers in PSP films, which results from an intrinsic disorder in this material. A low‐temperature TSL peak with the maximum at around 30 K evidences for a weak energy disorder in PSP films, and has been interpreted in terms of a hopping model of TSL in disordered organic materials. 相似文献
53.
Ming-Te Lin Minghang Li Wei-Hsuan Chen Mohammad A. Omary Nigel D. Shepherd 《Solid-state electronics》2011,56(1):196-200
Transient electroluminescence (EL) was used to measure the delay between the excitation pulse and onset of emission in OLEDs based on phosphorescent bis[3,5-bis(2-pyridyl)-1,2,4-triazolato] platinum(ΙΙ) doped into 4,4′-bis(carbazol-9-yl) triphenylamine (CBP), from which an electron mobility of 3.2 × 10−6 cm2/V s was approximated. Delayed recombination was observed after the drive pulse had been removed and based on its dependence on frequency and duty cycle, ascribed to trapping and de-trapping processes associated with disorder-induced carrier localization at the interface between the emissive layer and electron blocker. The data suggests that the exciton recombination zone is at, or close to the interface between the emissive layer and electron blocker. Despite the charge trapping effects, a peak power efficiency of 24 lm/W and peak external quantum efficiency of 10.64% were obtained. Mechanisms for the electroluminescence and delayed recombination are proposed. 相似文献
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A. P. Young S. H. Goss L. J. Brillson J. D. Mackenzie C. R. Abernathy 《Journal of Electronic Materials》2000,29(3):311-316
We have investigated the optical activity of Er3+ ions in AlN via depth-resolved, (5 nm to 250 nm), low energy electron-excited nanoscale (LEEN) luminescence spectroscopy
and compared it with the luminescence of an Er-free AlN film. For the Er-free film, there was no emission in the IR from the
AlN at any depth, and at higher energies we measured only a broad, weak feature between 1.7–3.25 eV along with an O defect
related feature at 3.8 eV, which is significantly enhanced toward the surface. We found strong emission in the AlN:Er films
from the first excited → ground state transition of Er3+ at 0.80 eV along with many other excited state transitions, although the features are broad compared to those of GaN:Er.
The AlN:Er luminescence saturates near a concentration of 1021 cm−3, at which point we also observe enhanced O defect related luminescence uniformly distributed throughout the film. This finding
suggests a role for O in activating the Er at low Er concentrations, while inhibiting the Er activity at high O concentrations. 相似文献
56.
在光突发交换(OBS)网络中,突发竞争是影响网络性能的一个重要因素,因此如何有效地解决它,成了OBS网络非常重要的问题.在分析当前文献中的解决方案的优缺点后,提出了一种突发竞争解决方案的系统实现.该实现将光纤延迟线(FDL)时城缓存与波长转换器(TWC)波长变换、空城技术结合在一起,构造了一个基于前向转发缓存和反馈循环缓存的两级交换结构.最后从多方面对该系统实现的竞争解决有效性进行了性能分析和计算机仿真,结果表明:它在适当的业务强度(小于0.6)下,能有效改善突发丢失率和突发延迟;同时能降低系统所需的光器件数目. 相似文献
57.
基于体光栅的可调谐线型腔双波长掺镱光纤激光器 总被引:8,自引:3,他引:8
论述了均匀加宽增益介质中利用净增益均衡原理同时输出双波长激光的可行性,使得双波长各自的损耗等于增益,抑制模式竞争,便可实现双波长输出。验证了上述原理,搭建的线型腔双波长掺镱光纤(YDF)激光器室温下可以实现单波长输出和双波长输出两种运转状态。单波长或者双波长输出时,转动体光栅角度,利用其分光谱和选波长的特性,均可使得波长分别在1013~1078nm的范围内调谐。双波长同时输出时,其线宽分别约为0.012和0.020nm,最大和最小波长间隔约为65.00和1.04nm。双波长间隔较小时,双波长对彼此的抑制影响较间隔大时更为明显。双波长输出功率均衡稳定,最大输出功率可达40.7mW。输出双波长时,该激光器可用于光子混频和拍频产生太赫兹辐射;输出单波长时,由于其波长可调谐的特性,该激光器可用作光学相干层析(OCT)的调谐光源。 相似文献
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