Synthesis and characterization of ceria quantum dots using effective surfactants

The stable and crystalline phase of different surfactants (CTAB, PEG and SDS) capped CeO₂ nanoparticles were directly synthesized by chemical precipitation method at room temperature. The effects of surfactants on the structural and optical properties of nanoparticles are characterized. The optical properties of the nanoparticles were investigated by UV–visible and PL spectroscopy. The effects of surfactants with observed band shifts are due to quantum confinement effect. The optical band gap values are determined by simple energy wave equation and Tauc plot method. The observed particle sizes are very closer to the Bohr exitonic radius. The emission bands such as violet, blue, green and orange are observed in PL spectra. The PL integrated intensity ratio of the UV emission to the deep-level green emission (I_UV/I_DLE) for CTAB, PEG and SDS capped CeO₂ nanoparticles are observed. The XRD measurement shows that CeO₂ has cubic fluorite structure having the particle size 6–10 nm. The lattice strains were detected by Williamson–Hall plot method. The surface morphology of the nanoparticles is studied by SEM and FESEM analysis. TEM images show that the particles are nearly spherical in shape with diameter of 5–10 nm. Using FTIR spectra, the functional groups of the ceria are identified.     

An Epoxy Photoresist Modified by Luminescent Nanocrystals for the Fabrication of 3D High‐Aspect‐Ratio Microstructures

An epoxy‐based negative‐tone photoresist, which is known as a suitable material for high‐aspect‐ratio surface micromachining, is functionalized with red‐light‐emitting CdSe@ZnS nanocrystals (NCs). The proper selection of a common solvent for the NCs and the resist is found to be critical for the efficient incorporation of the NCs in the epoxy matrix. The NC‐modified resist can be patterned by standard UV lithography down to micrometer‐scale resolution, and high‐aspect‐ratio structures have been successfully fabricated on a 100 mm scaled wafer. The “as‐fabricated”, 3D, epoxy‐based surface microstructures show the characteristic luminescent properties of the embedded NCs, as verified by fluorescence microscopy. This issue demonstrates that the NC emission properties can be conveniently conveyed into the polymer matrix without deteriorating the lithographic performance of the latter. The dimensions, the resolution, and the surface morphology of the NC‐modified‐epoxy microstructures exhibit only minor deviations with respect to that of the unmodified reference material, as examined by means of microscopic and metrologic investigations. The proposed approach of the incorporation of emitting and non‐bleachable NCs into a photoresist opens novel routes for surface patterning of integrated microsystems with inherent photonic functionality at the micro‐ and nanometer‐scale for light sensing and emitting applications.     

GaN基紫外光探测器的研究进展

相对于其他类型的探测器,GaN基紫外光探测器具有很多优点.本文主要介绍了近几年GaN基紫外光探测器的发展,并对各种结构形式进行了比较.     

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Due to its significant applications in many relevant fields, light detection in the solar‐blind deep‐ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high‐quality ultrawide‐bandgap (UWBG) semiconductors have enabled the realization of various high‐performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar‐blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga₂O₃, Mg_xZn_1?xO, III‐nitride compounds (Al_xGa_1?xN/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.     

Au-AlxGa1-xN MSM结构紫外光电二极管伏安特性研究

在N型A lxGa1-xN(x=0.19~0.25)薄膜表面热蒸发Au金属薄膜,经过退火后制成MSM结构的光电器件。测试其I-V曲线,从金属—半导体MSM结构肖特基二极管的理论模型推导了这种新型紫外器件的理想伏安特性,并将实验结果与理论模型相拟合,为制造导弹来袭紫外告警探测器提供研究依据。     

热处理对紫色翡翠光谱学特征影响的研究

使用X射线衍射仪(XRD)、紫外-可见吸收光谱仪(UV-VIS)与拉曼光谱仪,对进行氧化气氛热处理前后的紫色翡翠样品进行光谱测试。XRD分析结果显示,紫色翡翠样品中95%以上是硬玉成分。热处理前后的紫外-可见吸收光谱对比结果显示,样品热处理后的光谱和热处理前相比,437nm处尖峰以及580nm处吸收包基本消失;而拉曼光谱图对比结果显示,热处理后黄褐色部位拉曼峰值基线整体呈上升趋势。分析结果表明,紫色翡翠样品主要致色离子为Fe2+,在经过热处理后,Fe2+氧化成为Fe3+,生成Fe2O3,从而致使热处理后的紫色翡翠样品呈现出黄褐色。     

Oriented colloidal-crystal thin films of polystyrene spheres via spin coating

We developed a simple and inexpensive synthesis of a large-scale close-packed monolayer of polystyrene sphere arrays, which have a variety of applications. The influence of three step spin speeds, spinning time, solution quantity and relative humidity is studied in order to achieve a large area close-packed monolayer.A relatively high surface coverage and uniform monolayer of PS spheres in the range of 85%–90% are achieved by appropriate control of the preparative parameters. Also the effect of the oxygen plasma etching process on the reduction of PS spheres has been studied. We conclude that it can be useful in industrial applications, because of the fabrication speed, surface coverage, control over PS spheres and cost of the process.     

局域网用超六类电缆电气性能的标准要求

随着10GBASE-T用水平对绞铜缆CAT6A(局域网用超六类电缆)标准的出台﹐带来了又一轮网络升级的高潮。深入分析了IEC 61156-5、ANSI/TIA 568C.2和YD/T 926.2—2009三个标准对CAT6A性能的不同要求,并提出对应的控制和解决方案。     

深亚微米光学光刻工艺技术

光学光刻的生命力仍然在不断延续 ,即使在 0 13 μm及 0 13 μm以下集成电路制造水平上 ,光学光刻仍然是一个非常重要的候选者。深亚微米光学光刻工艺技术目前面临着越来越严重的挑战。对深亚微米光学光刻中的一些关键工艺技术如移相光刻、光学邻近效应校正、远紫外光刻胶、套刻对准误差等进行了论述。