钛在海水中的阴极充氢行为

运用H型双面电解槽，采用双面电解充氢法对海水中自然表面钛片进行恒电流电解充氢，研究了钛在海水中的阴极充氢过程。用X-射线衍射法对充氢后碎裂钛片进行检测，同时探讨了试样厚度、充氢电流密度和阳极氧化电位对于氢渗过程的影响。结果表明，表面膜是氢渗过程的控制因素：试样厚度增加，氢氧化峰值电流和峰值电流出现时间增加：峰值电流随充氢电流密度和B面氧化电位升高而增大，而峰值电流出现时间随充氢电流密度和B面氧化电位升高而减小。     

The low-temperature oxidation of calcium by water vapor

The oxidation kinetics of calcium in water vapor have been studied over the temperature range 25–300°C. There is a change in the form of the oxidation kinetics with temperature, from essentially linear at temperatures below 150°C to logarithmic at 300°C. This is coupled with a change in the manner of growth of the oxide layer as well as the chemical composition of the reaction product. In addition, the oxidation rate decreases with temperature, reaching a minimum at about 150°C. At temperatures below 150°C oxidation appears to be a result of the formation of cracks or fissures in the oxide film. Above 150°C no single oxidation mechanism can be deduced.     

GH718合金氢渗透特性的研究

ＧＨ７１８合金氢渗透特性的研究徐坚，孙秀魁，刘清泉，陈文绣（中国科学院金属研究所，快速凝固非平衡合金国家重点实验室沈阳１１００１５）１前言ＧＨ７１８（ＩＮＣＯＮＥＬ７１８）合金广泛用作为涡轮叶片、氢燃发动机、核反应堆器壁等部件的材料．由于使用环境中氢...     

Hydrogen embrittlement susceptibility and permeability of two ultra-high strength steels

Slow displacement rate tensile tests were carried out in a saturated H₂S solution to investigate the effect of hydrogen embrittlement on notched tensile strength (NTS) and fracture characteristics of two ultra-high strength steels (PH 13-8 Mo stainless steel and T-200 maraging steel). Hydrogen permeation properties were determined by an electrochemical permeation method. The results of permeation tests indicated that over-aged specimens showed a lower diffusivity/hydrogen flux and higher solubility than those solution-annealed. The great increase in reverted austenite (irreversible hydrogen traps) together with numerous precipitates at the expense of dislocations (reversible) in the over-aged specimen led to such a change in permeability. Ordinary tensile tests indicated that four tested specimens had roughly the same yield strength level. Hence, the hydrogen embrittlement susceptibility of the material could be related to their permeation properties. The uniform distribution of strong hydrogen traps in over-aged specimens instead of weak traps in the solution-annealed impeded the hydrogen transport toward the strained region, thus, the resistance to sulfide stress corrosion cracking was improved in over-aged specimens.     

Isochoric (p-π-T) measurements on liquid and gaseous air from 67 to 400 K at pressures to 35 MPa

Comprehensive isochoricp--T measurements have been carried out on liquid and gaseous air along 16 isochores at densities ranging from 2 to 32 mol · dm^–3. The air mixture has a nominal composition of 0.7813 N₂ + 0.2096 O₂ + 0.0092 Ar. Thep--T data cover a temperature range from 67 to 400 K at pressures up to 35 MPa. Comparisons with experimental results from independent sources are presented using a fundamental equation of state based. in part, on thep--T data from this study.     

Optical third-harmonic investigations of gallium nitride nucleation layers on sapphire

The magnitude of the χ _xxxx ⁽³⁾ element of the third-order optical susceptibility was measured in a series of wurtzite phase GaN nucleation layers (～450Å) deposited on (00.1) sapphire at 540°C and annealed to various temperatures up to 1050°C. The nonlinear optical response exhibited a significant increase in films that were annealed to temperatures in the range of 1015 to 1050°C. In addition, the correlation between the magnitude of χ _xxxx ⁽³⁾ with both the maximum value of the linear absorbance gradient and the residual homogeneous strain in the overlayer suggests that variations in the crystalline content of the film and the bonding distance between the Ga and N atoms are primary factors in determining the third-order nonlinearity in GaN.     

2D Bi2O2Te Semiconductor with Single-Crystal Native Oxide Layer

Following logic in the silicon semiconductor industry, the existence of native oxide and suitable fabrication technology is essential for 2D semiconductors in planar integronics, which are surface-sensitive to typical coating technologies. To date, very few types of integronics are found to possess this feature. Herein, the 2D Bi₂O₂Te developed recently is reported to possess large-area synthesis and controllable thermal oxidation behavior toward single-crystal native oxides. This shows that surface-adsorbed oxygen atoms are inclined to penetrate across [Bi₂O₂]_n²ⁿ⁺ layers and bond with the underlying [Te]_n²ⁿ⁻ at elevated temperatures, transforming directly into [TeO₄]_n²ⁿ⁻ with the basic architecture remaining stable. The oxide can be adjusted to form in an accurate layer-by-layer manner with a low-stress sharp interface. The native oxide Bi₂TeO₆ layer (bandgap of ≈2.9 eV) exhibits visible-light transparency and is compatible with wet-chemical selective etching technology. These advances demonstrate the potential of Bi₂O₂Te in planar-integrated functional nanoelectronics such as tunnel junction devices, field-effect transistors, and memristors.     

Lateral WSe2 Homojunction through Metal Contact Doping: Excellent Self-powered Photovoltaic Photodetector

Here an IR-heating chemical vapor deposition (CVD) approach enabling fast 2D-growth of WSe₂ thin films is reported, and the great potential of metal contact doping in building CVD-grown WSe₂-based lateral homojunction is demonstrated by contacting with TiN/Ni metals in favor of holes/electrons injection. Shortening nanosheet channel to ≈2 µm leads to pronounced enhancement in the performance of diode. The fabricated WSe₂-based diode exhibits high rectification ratios without the need of gate modulation and can work efficiently as photovoltaic cell, with maximum open circuit voltage reaching up to 620 mV and a high power conversion efficiency over 15%, empowering it as superb self-powered photodetector for visible to near-infrared lights, with photoresponsivity over 0.5 A W⁻¹ and a fast photoresponse speed of 10 µs under 520 nm illumination. It is of practical significance to achieve well-performed photovoltaic devices with CVD-grown WSe₂ using fab-friendly metals and simple processing, which will help pave the way toward future mass production of optoelectronic chips.     

Vapor Phase Dealloying Derived Nanoporous Co@CoO/RuO2 Composites for Efficient and Durable Oxygen Evolution Reaction (Adv. Funct. Mater. 17/2023)

The development of low-cost and effective oxygen evolution reaction (OER) electrocatalysts to expedite the slow kinetics of water splitting is crucial for increasing the efficiency of energy conversion from electricity to hydrogen fuel. Herein, 3D bicontinuous nanoporous Co@CoO/RuO₂ composites with tunable sizes and chemical compositions are fabricated by introducing vapor phase dealloying of cobalt-based alloys. The influence of physical parameters on the formation of nanoporous Co substrates with various feature ligament sizes is systematically investigated. The CoO/RuO₂ shell is constructed by integrating a thin layer of RuO₂ on the inner surface of nanoporous Co, where the CoO interlayer is formed by annealing oxidization. The composite catalyst delivers an ultralow overpotential of 198 mV at 10 mA cm⁻², Tafel slope of 57.1 mV dec⁻¹, and long-term stability of 50 h. The superior OER activity and fast reaction kinetics are attributed to charge transfer through the coupling of Co O Ru bonds at the interface and the excellent nanopore connectivity, while the durability originates from the highly stable CoO/RuO₂ interface.     

Structural and optical properties of AIN sputtering deposited on sapphire substrates with various orientations

AIN thin films were deposited on c-,a-and r-plane sapphire substrates by the magnetron sputtering technique.The in-fluence of high-temperature thermal annealing (HTTA) on the structural,optical properties as well as surface stoichiometry were comprehensively investigated.The significant narrowing of the (0002) diffraction peak to as low as 68 arcsec of AIN after HTTA implies a reduction of tilt component inside the AIN thin films,and consequently much-reduced dislocation densities.This is also supported by the appearance of E2(high) Raman peak and better Al-N stoichiometry after HTTA.Furthermore,the in-creased absorption edge after HTTA suggests a reduction of point defects acting as the absorption centers.It is concluded that HTTA is a universal post-treatment technique in improving the crystalline quality of sputtered AIN regardless of sapphire orienta-tion.