Nucleation of ZnTe on the As-Terminated Si(112) Surface

We employ a suite of surface analysis techniques that probe the outermost ZnTe/As-Si(112) surface to generate an understanding of the initial stages of the heteroepitaxial HgCdTe/CdTe/ZnTe/As-Si(112) layer formation. Ion scattering spectroscopy (ISS), reflection-high energy electron diffraction (RHEED), along with nondestructive depth profiles by angle-resolved x-ray photoelectron spectroscopy (XPS) are successfully applied to clarify and support the nucleation stages of ZnTe formation on the As-terminated Si(112) substrate. Data indicate a slow growth of the first ZnTe layer. In addition, no evidence of thick ZnTe island formation exists. The current ZnTe formation process generates full coverage on the Si(112) surface after six to nine MBE cycles. In order to fully understand the details of the ZnTe nucleation process on the Si(112) substrate, we present an inelastic background analysis with the Tougaard method to study surface morphology.     

High-resolution X-ray diffraction studies of molecular beam epitaxy-grown HgCdTe heterostructures and CdZnTe substrates

Lattice mismatch between substrates and epitaxial layers of different molefractions can create a variety of distortions and defects in Hg_(1−x)Cd_(x)Te epilayers, thus degrading the performance of infrared detectors fabricated from this material. X-ray diffraction is a sensitive nondestructive technique, which allows in-depth characterization of the crystal lattice prior to detector fabrication. We present results of triple-axis diffractometry performed on single- and double-layer HgCdTe films grown on (211)B CdZnTe substrates by molecular beam epitaxy (MBE). In this study, both the ω and 2θ diffraction angles have been recorded absolutely so that the diffraction peaks in the RSMs can be positioned directly in reciprocal space, without requiring reference to a substrate peak. The positions of both surface-symmetric and asymmetric diffraction peaks have been used to extract lattice spacings parallel and perpendicular to the (211) growth direction. The relaxed lattice parameter of each epilayer has been calculated assuming that the layers are elastically strained. The low symmetry of the (211) growth direction, coupled with the anisotropic elasticity of zinc-blende semiconductors, results in monoclinic distortion of the lattice, as observed in these samples. In double-layer samples, the mosaicity of both layers is greater than that observed in single epilayers. Layers subjected to a Hg-saturated anneal show greater lattice distortion than as-grown samples.     

Investigation of microstructure and V-defect formation in In<Subscript>x</Subscript>Ga<Subscript>1−x</Subscript>N/GaN MQW grown using temperature-gradient metalorganic chemical vapor deposition

Temperature-gradient metalorganic chemical vapor deposition (MOCVD) was used to deposit In_xGa_1−xN/GaN multiple quantum well (MQW) structures with a concentration gradient of indium across the wafer. These MQW structures were deposited on low defect density (2×10⁸ cm⁻²) GaN template layers for investigation of microstructural properties and V-defect (pinhole) formation. Room temperature (RT) photoluminescence (PL) and photomodulated transmission (PT) were used for optical characterization, which show a systematic decrease in emission energy for a decrease in growth temperature. Triple-axis x-ray diffraction (XRD), scanning electron microscopy, and cross-sectional transmission electron microscopy were used to obtain microstructural properties of different regions across the wafer. Results show that there is a decrease in crystal quality and an increase in V-defect formation with increasing indium concentration. A direct correlation was found between V-defect density and growth temperature due to increased strain and indium segregation for increasing indium concentration.     

Examination of the effects of high-density plasmas on the surface of HgCdTe

High-density argon-hydrogen plasmas have been demonstrated to be very effective as etchants of CdTe, CdZnTe, and HgCdTe materials for focal plane array applications. Understanding the physical, chemical, and electrical characteristics of these surfaces is critical in elucidating the mechanisms of processing Hg_1−xCd_xTe. The ways in which these plasmas interact with HgCdTe, such as etch rates and loading, have been studied.^1–11 However, little is known on how these plasmas affect the first few atomic layers of HgCdTe. In this study, the effects of high-density plasmas on the surface of HgCdTe were examined. The combination of argon and hydrogen plasma etch leaves a well-ordered, near-stoichiometric surface determined by both x-ray photoelectron spectroscopy and reflection high-energy electron diffraction (RHEED). Starting with Hg_0.78Cd_0.22Te, we were able to produce surfaces with x=0.4 and a RHEED pattern sharp enough to measure 2×1 reconstruction.     

Comparison of MBE Growth of InSb on Si (001) and GaAs (001)

We describe the epitaxial growth of InSb films on both Si (001) and GaAs (100) substrates using molecular-beam epitaxy and discuss the structural and electrical properties of the resulting films. The complete 2 μm InSb films on GaAs (001) were grown at temperatures between 340°C and 420°C and with an Sb/In flux ratio of approximately 5 and a growth rate of 0.2 nm/s. The films were characterized in terms of background electron concentration, mobility, and x-ray rocking curve width. Our best results were for a growth temperature of 350°C, resulting in room-temperature mobility of 41,000 cm²/V s.  For the growth of InSb on Si, vicinal Si(001) substrates offcut by 4° toward (110) were used. We investigated growth temperatures between 340°C and 430°C for growth on Si(001). In contrast to growth on GaAs, the best results were achieved at the high end of the range of T _S =  C, resulting in a mobility of 26,100 cm²/V s for a 2 μm film. We also studied the growth and properties of InSb:Mn films on GaAs with Mn content below 1%. Our results showed the presence of ferromagnetic ordering in the samples, opening a new direction in the diluted magnetic semiconductors.     

深亚微米同步辐射x射线光刻技术

报道了我们制作深亚微米 x射线掩模的工艺和同步辐射 x射线曝光工艺 ,并报道了我们在北京同步辐射装置 (BSRF) 3B1 A光刻束线所获得的深亚微米 x射线光刻图形的实验结果     

Statistical analysis and recovery behaviors of dislocations in cold-rolled and annealed reactor pressure vessel steels

The statistical analysis and recovery behavior of dislocations in cold-rolled and annealed reactor pressure vessel steels with a thickness reduction of 50 % were investigated by using x-ray diffraction and electron backscattered diffraction analysis in this study. A new modified Kubin & Mortensen's method was proposed to evaluate the geometrically necessary dislocation density, and this method could effectively improve the accuracy of geometrically necessary dislocation evaluation by eliminating the effect of step size and measurement noises. Comparison analysis between modified Williamson-Hall and modified Kubin & Mortensen's methods was also performed in this study, which shows different recovery behavior of dislocations. The electron backscattered diffraction results show that geometrically necessary dislocation density remained unchangeable after annealing treatment below and at 550 °C, and it occurred to decrease above 550 °C due to the occurrence of recrystallization. However, dislocations started to migrate and annihilate at 340 °C according to x-ray diffraction results. A possible explanation is a difference in the effect of pairwise dislocation annihilation on statistically stored dislocations and geometrically necessary dislocations.     

Formulation,optimization, and evaluation of raft-forming formulations containing Nizatidine

Objective: The main objective of this research is to formulate, optimize, and evaluate raft-forming chewable tablets of Nizatidine. Various raft-forming agents were used in preliminary screening. Sodium alginate showed maximum raft strength, so tablets were prepared using sodium alginate as the raft forming agent, along with calcium carbonate (CaCO₃) as antacid and raft strengthening agent, and sodium bicarbonate (NaHCO₃) as a gas generating agent.

Research design and methods: Raft forming chewable tablets containing Nizatidine were prepared by direct compression and wet granulation methods, and evaluated for drug content, acid neutralization capacity, raft strength, and in-vitro drug release in 0.1?N HCl. Box–Behnken design was used for optimization.

Results: Two optimized formulations were predicted from the design space. The first optimized recommended concentrations of the independent variables were predicted to be X₁?=?275.92?mg, X₂?=?28.60?mg, and X₃?=?202.14?mg for direct compression technique and the second optimized recommended concentrations were predicted to be X₁?=?253.62?mg, X₂?=?24.60?mg, and X₃?=?201.77?mg for wet granulation technique. Optimized formulations were stable at accelerated environmental testing for six months at 35?°C and 45?°C with 75% relative humidity. X-Ray showed that the raft floated immediately after ingestion and remained intact for ～3?h.

Conclusion: Raft was successfully formed and optimized. Upon chewing tablets, a raft is formed on stomach content. That results in rapid relief of acid burning symptoms and delivering the drug into systemic circulation with enhanced bioavailability.     

PLD生长的ZnO薄膜的微结构及其发光特性研究

在不同的衬底温度下，通过脉冲激光淀积（PLD）方法在Si衬底上生长出c轴高度取向的ZnO薄膜。ZnO薄膜的结构分别通过X射线衍射（XRD）和广延X射线吸收精细结构（EXAFS）来表征，而表面成份和化学态则通过X射线光电子能谱来研究。利用光致发光（PL）来研究样品的发光特性。XRD结果和EXAFS结果都表明了500℃时生长的ZnO薄膜的结晶性比300℃时生长的要好。EXAFS结果和XPS结果显示，300℃时生长的ZnO薄膜处于富氧状态，而500℃时生长的则处于缺氧状态。结合XRD谱、EXAFS谱、XPS谱和PL谱的结果可以看到：随着ZnO薄膜的结晶性变好，它的紫外发光增强；另一方面，随着ZnO薄膜中O的含量减少，绿光发射变强。我们的结果表明绿光发射与ZnO中氧空位（V0）有关。     

工业射线照相胶片的感光性能、质量与选用要求

从无损检测实际应用角度，概述工业射线照相对射线胶片的性能和质量要求及选用考虑，旨在为工业射线胶片的制造和使用与国际接轨提供意见。