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131.
132.
No authorship indicated 《Canadian Metallurgical Quarterly》1993,48(4):346
Recognizes Martha J. Farah for rigorous empirical and theoretical analysis of visual cognition, in which understanding of normal function and analysis of neurological deficits illuminate and strengthen one another. Applying diverse experimental techniques within an integrated approach to the study of mind and brain, she has sharpened and helped to answer fundamental questions about how humans generate and manipulate visual images, recognize objects, and attend to positions in space. Along with a citation, a biography is presented for Farah, as well as a bibliography of her works. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
133.
J Strother Moore 《Formal Aspects of Computing》1994,6(1):60-91
We present a formal model of asynchronous communication between two digital hardware devices. The model takes the form of a function in the Boyer-Moore logic. The function transforms the signal stream generated by one processor into that consumed by an independently clocked processor, given the phases and rates of the two clocks and the communications delay. The model can be used quantitatively to derive concrete performance bounds on communications at ISO protocol level 1 (physical level). We use the model to show that an 18-bit/cell biphase mark protocol reliably sends messages of arbitrary length between two processors provided the ratio of the clock rates is within 5% of unity. 相似文献
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135.
姜功建 《云南工业大学学报》1993,(4)
本文研究推广的Kantorovi多项式P_n~*(f, x)在L_p[0,1]空间中的保持Lipschitz条件性质。 相似文献
136.
J. W. Huang J. M. Ryan K. L. Bray T. F. Kuech 《Journal of Electronic Materials》1995,24(11):1539-1546
The defect engineering in metalorganic vapor phase epitaxy InxGa1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has
led to the incorporation of Al and O, and the compensation of shallow Si donors in InxGa1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent
of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on
a series of InxGa1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in
DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction
band and led to a high electron concentration in oxygen doped In0.53Ga0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the
near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation
of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels. 相似文献
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