光漂白法制备有机聚合物非线性定向耦合器

研究了用光漂白的方法制备PMMA/DR1聚合物非线性定向耦合器,提出了一种容易的制备方法来得到要求的耦合长度.测量了材料的光学非线性对定向耦合器两臂透过率的影响.实验结果表明由于光学非线性,耦合器的耦合长度随着入射光强度的改变而发生变化.     

JOINING MECHANISMS OF β''''-Al2O3 CERAMIC AND PYREX GLASS TO Al MATRIX COMPOSITE

The bonding of β'-Al2O3 and pyrex glass to Al matrix composites by anodic bonding process is achieved. The microstructure of the bonded interface and the joining mechanisms are analyzed with scanning electron microscope (SEM), energy dispersive X-ray fluorescence spectrometer (EDX). It is observed that the bonding region across the interface consists of the metal layer, oxide transitional layer and the ceramic layer, with the transitional layer composed of surface region and sub-surface region. The bonding process can mainly be categorized into anodic bonding process and solid state diffusing process. The pile-up of the ions and its drift in the interface area are the main reasons for anode oxidation and joining of the interface. The temperature, voltage and the drift ions in the ceramic or glass during the bonding process are the essential conditions to solid state diffusing and oxide bonding at the interface. The voltages, temperature, pressure as well as the surface state are the main factors that influence the anodic bonding.     

Effects of compressive and tensile stress on the growth mode of epitaxial oxide films

Oxide films were deposited on different substrates by laser molecular beam epitaxy. Reflection high-energy electron diffraction was performed to in situ investigate the change of growth mode and the lattice relaxation during the growth. An asymmetrical phenomenon was found in the two kinds of strain states, compressive stress and tensile stress of heterostructures with different lattice mismatch. In the case of BaTiO₃/SrTiO₃ (2.2%), 2D layer-by-layer growth mode without lattice relaxation can be maintained for a longer period for BTO films on STO with compressive stress, comparing to STO films on BTO with tensile stress. When MgO films were deposited on SrTiO₃ with a large mismatch of 7.8%, compressive stress leads to rapid lattice relaxation with a very thin wet layer, and 3D strained island were observed. As a comparison, SrTiO₃ films on MgO with tensile stress were configured. No RHEED patterns can be observed duo to a large tensile stress.     

基体温度对磁控溅射沉积ZAO薄膜性能的影响

利用中频交流磁控溅射方法 ,采用氧化锌铝陶瓷靶材 [w(ZnO) =98%、w(Al2 O3 ) =2 % ]制备了ZAO(ZnO∶Al)薄膜 ,观察了基体温度对ZAO薄膜的晶体结构、电学和光学性能的影响 ,采用X射线衍射仪对薄膜的结构进行了分析 ,采用光学分度计和电阻测试仪测量了薄膜的光学、电学特性 ,采用霍尔测试仪测量了薄膜的载流子浓度和霍尔迁移率。结果表明 :沉积薄膜时的基体温度对薄膜的结构、结晶状况、可见光透射率以及导电性有较大的影响。当基体温度为 2 5 0℃ ,Ar分压为 0 8Pa时 ,薄膜的最低电阻率为 4 6× 10 -4Ω·cm ,方块电阻为 35Ω时 ,可见光 (λ =5 5 0nm)透射率高达 92 0 %。     

离子束辅助沉积制备高功率激光薄膜的研究

综述了离子束辅助沉积技术在高功率激光薄膜制备中的应用研究进展.指出该技术在制备高激光损伤阈值的薄膜中存在的问题,即出现过高的堆积密度,会给薄膜带来杂质缺陷、化学计量比缺陷、损伤缺陷、晶界缺陷,制备薄膜的残余应力存在着压应力增加的趋势,会改变薄膜的晶体结构等.并指出了该研究领域的研究方向.     

掺Nd纳米ZnO薄膜特性研究

研究了用真空蒸发法在玻璃衬底上制备稀土掺杂纳米ZnO薄膜结构、导电性及光透射性能。结果显示 ,在 5 0 0℃氧化、热处理稀土元素Nd掺杂后能够明显改善纳米ZnO薄膜的结构特性 ,薄膜的晶粒尺寸随掺杂含量的增加而减小。掺Nd使ZnO薄膜的电性能有所改善但使纳米ZnO薄膜的光透射性有所降低。     

Evolution of grain structure in thin film reactions

In this paper, we examine, both experimentally and theoretically, the kinetics of formation and microstructure of product phases in thin film reactions, using the Nb/Al and Ti/Al systems as our prototypes. The results of calorimetry and microscopy studies are interpreted using simple kinetic and morphology models. In particular, the kinetic models employed here focus on the nucleation and growth components of the phase formation process and the morphology models provide a starting point for the classification of product grain structures. An erratum to this article is available at .     

Measurement of specimen charging in scanning electron microscopy with a kelvin probe

A vibrating Kelvin probe in form of a platinum wire loop is used to measure the surface potential U_s on electron-irradiated free-floating metal and insulator specimens as a function of electron energy E. This allows an accurate measurement of the critical electron energy E₂ for no charging. At energies below E₂, the positive charging increases with decreasing energy to U_s=2–5 eV at E=0.5 keV and switching off the collector bias of the Everhart-Thornley detector. A two-to threefold increase of U_s is observed when the bias is switched on. For E > E₂, the strong increase of a negative surface potential can be measured. Insulating films free-supported on a conductive substrate show a steep decrease to small positive and negative U_s when the film thickness becomes lower than the electron range at a critical energy E₃ > E₂. At insulating specimen the temporal decrease of charging can be measured when the electron beam is switched off.     

反应离化团束（RICB）法生长CN硬质薄膜

用反应离化团束（ＲＩＣＢ）法，以低分子量聚乙烯为蒸发材料，氨气为反应气体，在ＮａＣｌ（１００）和Ｓｉ（１００）衬底上淀积Ｃ－Ｎ薄膜，透射电子衍射（ＴＥＭ）分析表明薄膜中含有β－Ｃ３Ｎ４晶粒，Ｘ射线光电子谱（ＸＰＳ）和红外吸收谱（ＩＲ）表明存在Ｃ，Ｎ原子的化学键合。