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91.
CdTe films were prepared by physical vapour deposition on a substrate at room temperature (RT) as well as on a cold (LT) one using low deposition rate. The thickness-dependence of stoichiometry revealed an abrupt decrease in the Cd/Te ratio as the thickness increases. Change of thickness did not affect the type of observed (111) crystallographic texture, only the degree of preferred orientation is enhanced as the film grows. The internal strain was negligible while the crystallite size increased rapidly at small thickness (up to 400 nm), and less thickness dependence was observed with further film growth. However, thickness dependence of lattice parameters showed a minimum and a maximum at approximately 300 nm in the case of RT and LT, respectively. The observed change in conductivity from n- to p-type and its vital correlation with the stoichiometry and structural characteristics were presented. Based on thickness dependence of stoichiometry and lattice parameters as well as the conductivity type, formation and annihilation of lattice defects were considered.  相似文献   
92.
Studies were made on the thermally stimulated discharge currents (TSDCs) in pure (undoped) and Fe-doped polystyrene films as a function of polarizing field, polarizing temperature and dopant concentration. While undoped films exhibited a single peak, doped films showed two peaks one at low temperatures and another at high temperatures. The low temperature peak, which exhibits a shift towards lower temperatures with increasing dopant concentration, is attributed to the relaxation of the main chain, while the high temperature peak, which shows a tendency to shift towards higher temperatures with dopant concentration, is due to space charge polarization. The TSDCs were higher for low dopant concentrations than their undoped counterparts, while for high concentrations of the dopant, the TSDCs decreased. Formation of charge transfer complexes at low dopant concentrations and molecular aggregates at higher dopant concentrations are suggested as the possible reasons for this behaviour.  相似文献   
93.
Oxygen Tracer Diffusion in Vitreous Silica   总被引:2,自引:0,他引:2  
Oxygen diffusion in vitreous silica glass is studied using the gas exchange technique. The tracer concentration profiles are consistent with a model based on two mechanisms, one network and the other interstitial. These processes are coupled through limited network–interstitial exchange. Nuclear reaction analysis and secondary ion mass spectrometry techniques are performed and compared. These results are compared to experiments on transport in thin silica films grown on single-crystal silicon.  相似文献   
94.
In the research presented here, we explore the use of a low‐energy plasma to deposit thin silicone polymer films using tetramethyldisiloxane (TMDSO) (H(CH3)2? Si? O? Si? (CH3)2H) on the surface of an ethylene propylene diene elastomeric terpolymer (EPDM) in order to enhance the surface hydrophobicity, lower the surface energy and improve the degradation/wear characteristics. The processing conditions were varied over a wide range of treatment times and discharge powers to control the physical characteristics, thickness, morphology and chemical structure of the plasma polymer films. Scanning electron microscopy (SEM) shows that pore‐free homogeneous plasma polymer thin films of granular microstructure composed of small grains are formed and that the morphology of the granular structure depends on the plasma processing conditions, such as plasma power and time of deposition. The thicknesses of the coatings were determined using SEM, which confirmed that the thicknesses of the deposited plasma‐polymer films could be precisely controlled by the plasma parameters. The kinetics of plasma‐polymer film deposition were also evaluated. Contact angle measurements of different solvent droplets on the coatings were used to calculate the surface energies of the coatings. These coatings appeared to be hydrophobic and had low surface energies. X‐ray photoelectron spectroscopy (XPS) and photoacoustic Fourier‐transform infrared (PA‐FT‐IR) spectroscopy were used to investigate the detailed chemical structures of the deposited films. The optimum plasma processing conditions to achieve the desired thin plasma polymer coatings are discussed in the light of the chemistry that takes place at the interfaces. Copyright © 2004 Society of Chemical Industry  相似文献   
95.
By integrating lithography and self‐assembly via electrohydrodynamic instabilities, Russel and co‐workers are able to guide initially flat polymer films to evolve into periodic arrays of pillars over regions much greater in extent than their natural domain sizes, as detailed on p. 1992. Novel structures that involve a combination of linear ridges and pillars are also produced, mainly as as result of the dynamic merging among preformed pillars. To pattern thin polymer films via electrohydrodynamic instabilities, we design and utilize two different kinds of mask patterns to guide pillars into alignment over regions much greater in extent than their natural domain sizes. First, narrow protruding ridges that intersect to form regular patterns on the mask trigger the growth of pillars beneath. Later, square and triangular packings of pillars develop in the regions enclosed by those ridges, preserving the registry from one domain to the next over a much larger area than within individual domains in unpatterned portions of the mask. Second, small square protrusions that are prealigned into a large regular array on the mask guide the formation of square packings of pillars in domains that conform to the mask, forming a large array of pillars. Novel structures involving a combination of linear ridges and pillars are also produced mainly due to the dynamic merging among preformed pillars. Finally, we find vertex symmetry of the mask pattern is necessary for generating and preserving ordered patterns on the polymer film.  相似文献   
96.
1Introduction Theultravioletrays(UV)insunlight(-4%)cantransmitintoroomthroughcommonfloatglass,theUVcanmakethematerialsintheroom,eg,paper,furni ture,textilefabricandplastics,becoloredanddeterio rated.ShieldingfromUVirradiationisofinterestinmanyfields.Formu…  相似文献   
97.
本文报导在 Si 衬底上拉制聚酰胺 LB 膜的电容-电压特性,结果表明:它具有与其它绝缘膜相似的特性,为聚酰胺 LB 膜应用于场效应器件奠定了基础。  相似文献   
98.
Delamination of residually stressed thin film strips is analyzed to expose the dependence on strip width and film/substrate elastic mismatch. Isotropic films and substrates are assumed. The residual stress in the film is tensile and assumed to originate from mismatch due to thermal expansion or epitaxial deposition. Full and partial delamination modes are explored. In full delamination, the interface crack extends across the entire width of the strip and releases all the elastic energy stored in the strip as the crack propagates along the interface. The energy release rate available to propagate the interface crack is a strong function of the strip width and the elastic modulus of the film relative to that of the substrate. The energy release rate associated with full delamination is determined as a function of the interface crack length from initiation to steady-state, revealing a progression of behavior depending in an essential way on the three dimensionality of the strip. The dependence of the energy release rate on the remaining ligament as the interface crack converges with the strip end has also been calculated, and the results provide an effective means for inferring interface toughness from crack arrest position. A partial delamination propagates along the strip leaving a narrow width of strip attached to the substrate. In this case, the entire elastic energy stored in the strip is not released because the strain component parallel to the strip is not relaxed. A special application is also considered, in which a residually stressed metal superlayer is deposited onto a polymer strip. The energy release rate for an interface crack propagating along the interface between the polymer and the substrate is determined in closed form.  相似文献   
99.
100.
Structural and electrical properties of brush plated ZnTe films   总被引:1,自引:0,他引:1  
Zinc telluride thin films were deposited by the brush plating technique at a potential of −0.90 V (SCE) on conducting glass and titanium substrates at different temperatures in the range 30–90 °C. The films were polycrystalline in nature with peaks corresponding to the cubic phase. Direct band gap of 2.30 eV was observed. XPS studiers indicated the formation of ZnTe. Depth profiling studies indicated a uniform distribution of Zn and Te throughout the entire thickness. EDAX measurements were made on the films and it was found that there was a slight excess of Te. The carrier concentration was found to vary from 1014–1015 cm−3 with increase of substrate temperature. The mobility was found to vary from 5 to 60 cm2 V−1 s−1.  相似文献   
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