Mechanism of nucleation and growth of cubic boron nitride thin films

The mechanism and the crystallography of the nucleation and growth of cubic boron nitride (c-BN) films deposited on 100-oriented silicon substrate by RF bias sputtering have been studied by means of cross-sectional high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Both methods provide experimental information showing no sp²-bonded BN layer formation in the subsurface region of c-BN phase. This is clear evidence for layer-by-layer homoepitaxial growth of cubic boron nitride without graphitic monolayers in the near-surface region of the film. The turbostratic boron nitride (t-BN) consists of thin sub-layers, 0.5–2 nm thick, growing in such a way that a sub-layer normal is almost parallel to the growth direction. t-BN also comprises a large volume fraction of the grain boundaries with high interface energies. The present result and the finding by Shtansky et al. [Acta Mater. 48, 3745 (2000)], who showed that an individual sub-layer consists of parallel lamellae in both the hexagonal (h-BN) and rhombohedral (r-BN) configurations, demonstrate that high intrinsic stress in the films is due to the complex structure of sp²-bonded BN. The crystallography of c-BN films indicates heteroepitaxial nucleation of cubic phase on the graphitic BN structural precursor. The present results are consistent with stress-induced c-BN formation.     

溶胶-凝胶法制备TiO2纳米薄膜的晶粒长大机理研究

通过sol-gel法在普通钠钙玻璃表面制备了均匀透明的锐钛矿型TiO2纳米薄膜.用透射电镜(TEM)、X射线衍射(XRD)和紫外可见吸收光谱(UV-VIS)等对薄膜的晶粒大小和透光率进行了表征.结果表明:随着镀膜次数和热处理时间的增加,薄膜中的平均晶粒大小接近线性增加.仅增加TiO2薄膜的热处理时间,薄膜中晶粒长大不明显,其吸收阀值未发生明显的红移.因此, 薄膜中晶粒长大的机理可能是: 上一次镀的TiO2晶粒成了下一次镀TiO2溶胶的晶核, 并在此基础上逐渐长大.     

Pulsed Laser Deposition of Zr1-xCexO2 and Ce1-xLaxO2-x/2 for Buffer Layers and Insulating Barrier in Oxide Heterostructures

We have studied the pulsed laser deposition (PLD) of Zr_1-xCexO₂ and Ce_1-xLa_xO₂-x/2 initially to grow buffer layers for perovskite films deposited on Si, LaAlO₃, SrTiO₃ and MgO and then to produce tunneling barriers for cuprate or manganite heterostructures. On (1 0 0) Si, the deposition of Zr_1-xCexO₂ (x = 0.12) produces a smooth epitaxial layer (R _RMS = 0.25/1m²), which allows the further deposition of high quality YBa₂Cu₃O₇ (Tc 88 K) and La_0.7Sr_0.3MnO₃ films. On the other hand, the use of Ce_1-xLa_xO_2-x/2 (0 x 0.4) makes it possible to match the YBa₂Cu₃O₇ and La_0.7Sr_0.3MnO₃ layers to various substrates. The buffer layers are epitaxially grown with a 45° rotation of the in-plane axes with respect to those of the substrate, and the smoothness is high (R _RMS = 0.25/1m²). In the case of an ultra-thin barrier (2.5 nm) of Ce_1-xLa_xO_2-x/2 sandwiched in a La_0.7Sr_0.3MnO₃, the out-of-plane mismatch of 2 induces distortions at the interface steps, which propagate into the topmost La_0.7Sr_0.3MnO₃ layer. This is in contrast to the case of SrTiO₃ barriers where an ideal crystal continuity in the growth direction is observed.     

燃焰法沉积金刚石薄膜的成核与生长

用扫描电镜研究了燃焰法沉积金刚石薄膜的成核与生长行为．分析了从成核至形成连续膜期间金刚石晶粒的生长特点．研究了沉积时间对金刚石薄膜晶体形态和表面形貌的影响。     

转印箔中粘接层的研究

注塑同时转印加工这一方法是近期发展起来的高新技术．对该方法中的关键步骤──转印箔制备中的粘接层的研究结果予以介绍．结果表明，选择的粘接层效果较好．     

用于DLTS测试的MOS结构

本文采用阳极氧化工艺制备AlGaAs/GaAs自身氧化膜,进而制成MOS结构。对氧化膜的组分和稳定性,以及MOS结构的C—V特性进行了实际测量和理论分析。实验结果表明:经氮气退火后的氧化膜的电学性质稳定。本文得出了适合于深能级瞬态谱测试的MOS结构,及采用MOS结构进行DLTS测试的测试条件。     

金属多层膜固相反应研究

综述了金属多层膜固相反应研究现状。着重阐述了组元结构差异以及不对称扩散偶中快扩散组元对固相反应的影响。另外,也介绍了非晶膜晶化时第一相形成的判据     

离子注入均匀性的工艺控制

叙述了影响离子注入均匀性的几个主要因素,其中包括束流品质,离子束聚焦与扫描以及束流大小选择等。同时介绍了如何控制这些因素来获取优异的注入均匀性,通过这些控制手段,均匀性可以优于１ ％ ,结果令人满意。     

Electrodeposition and corrosion behaviour of a Ni–W–B amorphous alloy

Electrodeposition of Ni–W–B alloys from plating baths containing ammonia and citrate is reported. Optimum conditions for plating including current density, temperature, mechanical agitation and pH were studied. The corrosion resistance and amorphous character were also evaluated. The operational conditions for depositing the alloy with good corrosion resistance were: current density 35 mA cm⁻², bath temperature 40 °C, pH 9.0 and cathode rotation at 90 rpm. The alloy was deposited at 38% current efficiency, with an average composition of 73 wt% Ni, 27 wt% W and traces of boron and with E _corr −0.300 V and R _p 3.369×10⁴ Ω. The deposit obtained under these conditions had an amorphous character with the presence of some microcracks on its surface reaching down to the copper substrate. Electrochemical corrosion tests verified that the Ni–W–B alloy had better corrosion resistance than Co–W–B.