Preparation of flee-standing diamond films for high frequency SAW devices

Free-standing diamond films were prepared by hot filament chemical vapor deposition （HFCVD） method under different conditions. Inter-digital transducers （IDTs） were formed on the nucleation sides of free-standing diamond films by photolithography technique. Then piezoelectric ZnO films were deposited by radio-frequency（RF） reactive magnetron sputtering to obtain the ZnO/diamond film structures. Surface morphologies of the nucleation sides and the IDTs were characterized by means of scanning electron microscopy （SEM）, atomic force microscope （AFM） and optical microscopy. The results indicate that the surfaces of nucleation sides are very smooth and the IDTs are of high quality without discontinuity and short circuit phenomenon. Raman spectra show the sharp diamond feature peak at about 1 334 cmI and the small amount of non-diamond carbon in the nucleation side. X-ray diffraction （XRD） patterns of the structure of ZnO/diamond films show a strong diffraction peak of ZnO （002）, which indicates that as-sputtered ZnO films are highly c-axis oriented.     

Magnesium interlayered diamond coating on silicon

Diamond thin films have been deposited using hot filament chemical vapour deposition technique on manually scratched p-Si(1 0 0) substrate, with and without magnesium interlayer. In spite of magnesium melting point being lower (T_m = 649 °C) than the growth temperature of the substrate (T_s  750 °C) used in these experiments, it was found that high quality diamond films could be grown on Mg covered substrate. A liquid substrate is probably generated during the diamond film growth. Raman spectroscopy analysis exhibited only the triply degenerate, zone centre optical phonon peak at 1333 cm⁻¹ indicating that nearly stress free crystallites were present. Broadening of the Raman peak (11.76 cm⁻¹) indicates that some small crystallites also are present. Scanning electron and atomic force microscopy accompanied by X-ray diffraction analysis where used to compare the details of diamond film growth directly on scratched Si(1 0 0) and Mg interlayered scratched Si(1 0 0) substrates.     

网状阴极法在碳钢表面沉积氮化钽薄膜的研究

介绍了一种在钢铁基体上制备氮化钽薄膜的新方法———网状阴极法。其设备简单、价格低廉。实验中发现 ,在工艺参数调配合适的条件下 ,可制备出结构为面心立方和密排六方结构的氮化钽薄膜。薄膜较致密且均匀 ,与基体结合良好。分析了优选工艺参数条件下合成的氮化钽膜的成分、组织、表面和断口形貌及结合力。     

Ti基RuO2-CeO2-SnO2涂层阳极的电催化性能

利用热分解法制备了不同CeO2含量的Ti基RuO2-CeO2-SnO2涂层阳极, 通过循环伏安曲线和电化学阻抗谱测试了所制备的涂层阳极的电催化性能, 并用扫描电镜对涂层阳极的表面形貌进行了观察. 结果表明 制备温度对涂层阳极的性能有很大影响, 在涂层阳极中引入CeO2可以增加RuO2-CeO2- SnO2涂层的有效活性表面积, 从而提高涂层阳极的电催化活性, 且CeO2含量的最佳摩尔分数为0.4.     

Mechanism of effect of rare earth oxides on high temperature corrosion resistance of weld metal

Through the addition of rare earth oxides into the coming of electrodes, the high temperature oxidation and sulphidation resistance of weld metal were studied. The transfer mechanism of rare earth oxides from coating to the welding pool and the physicochemical reaction during the process were analyzed. With the application of scanning electron microscope and energy spectrometer, the mechanism of weld metal corrosion in air and sulphur environment were studied. The result shows that the addition of rare earth oxides can improve the high temperature resistance of weld metal, especially in sulphidation environment. The electrodes in which La2O3 is added have better performance than the electrodes in which CeO2 is added. The existence form and distribution characteristic of rare earth are defined. It is believed that the marked effect of rare earth oxides in sulphur environment is related to the corrosion mechanism.     

高透明低发射率ITO薄膜的制备及其光电性能研究

目的研究磁控溅射工艺对ITO薄膜光电性能的影响,为制备高性能ITO薄膜提供数据和理论支撑。方法采用磁控溅射在PET基材上制备ITO薄膜,利用扫描电镜、X射线衍射仪、分光光度计、四探针、红外发射率测仪、Hall效应测试系统等,分析工艺参数对ITO薄膜光电性能的影响。结果随着氧气流量的增加,ITO薄膜在可见光区的透过率先增加,然后变缓,薄膜方块电阻先降低后升高;随着工作气压的增加,ITO薄膜的可见光透过率增加,薄膜方块电阻先下降后上升,电阻率先变小再增大,载流子浓度先增大后减小,红外发射率先减小后增大,晶体结构逐渐由晶态转变为非晶态;随着氩氧比的降低,薄膜红外发射率先降低,然后缓慢升高;随溅射时间的增加,薄膜的厚度逐渐增大,方块电阻、红外发射率和可见光透过率迅速下降,晶体结构逐渐由非晶结构转变为晶体结构。综合对比研究发现,当氧气流量为0.6 mL/min、工作气压为0.4 Pa、氩氧比为19.8∶0.2、溅射时间为80 min时,可获得综合性能优异的ITO薄膜,其可见光透过率大于80%,在8～14μm红外波段的辐射率小于0.2。结论磁控溅射工艺参数是决定薄膜综合质量的重要因素,通过严格控制工艺参数,可获得透明性高、发射率低的ITO薄膜。     

ZrO2基纳米催化吸收剂的制备及脱硫性能研究

采用分步沉淀法制备了担载CuO和ZnO的ZrO2基纳米催化吸收剂，对其结构和物相的变化进行了表征，并在模拟烟气中采用气相色谱仪研究了其脱除SOz的性能差别。结果表明，分步沉淀法制得的担载CuO和ZnO的ZrO2基纳米粉体的晶粒小于20mm，形貌多为球形或椭球形状，其中ZnO／ZrO2纳米粉体晶粒间有较大的团聚现象。对于纳米CuO／ZrO2催化吸收剂而言，比表面积越大，试样的脱硫率越高；而纳米ZnO／ZrO2粉体在200℃左右脱硫率达到最大，且随着温度的升高，脱硫率逐渐下降。当活性组分负载量为5％时，两种不同类型的催化吸收剂脱硫率均达到最高，稳定性也最好。相比之下，CuO／ZrO2纳米催化吸收剂适合于中温脱硫，而ZnO／ZrO2纳米催化吸收剂可在低温下更好地脱硫。     

气膜成型连续铸造技术

介绍了铝合金棒坯气膜成型连续铸造技术的原理和特点，以及气膜成型技术在国内外发展的现状，指出在国内开展该项技术研究值得注意的问题。     

磁控溅射制备纳米Ni-Ti薄膜工艺研究

为了得到高质量的纳米薄膜，对直流磁控溅射法制备Ni-Ti薄膜工艺进行了研究。采用单晶硅和玻璃两种基体材料，并在不同的基体温度、晶化温度、溅射功率等条件下制备薄膜。之后对薄膜进行了XRD，SEM分析。分析结果表明：薄膜成分、厚度、表面形貌、致密度与溅射功率、基体温度、晶化温度、基体材料密切相关。并根据实验结果给出优化的纳米Ni-Ti薄膜制备工艺。     

Fabrication and structure characterization of ITO transparent conducting film by sol-gel technique

Using In（NO3）3·5H2O and acetylacetone as raw materials and anhydrous SnCl4 as dopant, the transparent conducting indium tin oxide（ITO） films were prepared by sol-gel and dip-coating technique. The phase transformation, structure properties and physical properties （sheet resistance and transmittance） of the films were investigated by DTA-TG, XRD, SEM, four-probe method and UV-Vis spectrometry. The results indicate that it is feasible to fabricate 1TO films on the quartz substrates by sol-gel technique, and the ITO films are formed by accumulating of particles with the size of several decades of nanometers. The prepared ITO film has cubic bixbyite structure, and （111） is its preferred plane. After five-times dip-coating, the 1TO film has a thickness less than 150 nm, a sheet resistance of 110Ω/□, a resistivity of 1.65×10^-3Ω· cm and a transparency of 90% .