现代电子工业Cpk评价中的特殊问题

现代电子工业生产具有许多新的特点，如果不针对具体情况，均采用传统工业生产中广泛使用的常规方法计算其工序能力指数，评价生产工艺水平，将可能导致错误的结论。总结了电子工业生产中工艺参数的典型特点，并讨论了工序能力指数的正确计算方法。     

STATIONARY TANGENT: THE DISCRETE AND NON-SMOOTH CASE

Abstract. In Keich (2000 ),we define a stationary tangent process, or a locally optimal stationary approximation, to a real non-stationary smooth Gaussian process. This paper extends the idea by constructing a discrete tangent – a `locally' optimal stationary approximation – for a discrete time, real Gaussian process. Analogously to the smooth case, our construction relies on a generalization of the recursion formula for the orthogonal polynomials of the spectral distribution function. More precisely, we use a generalization of the Schur parameters to identify the stationary tangent. By way of discretizing, we later demonstrate how this tangent can be used to obtain `good' local stationary approximations to non-smooth continuous time, real Gaussian processes. Further, we demonstrate how, analogously to the curvatures in the smooth case, the Schur parameters can be used to determine the order of stationarity of a non-smooth process.     

一种制氢预转化催化剂还原的新方法

对上海高桥分公司2×10~4m~3/h(标准状态)制氢装置原设计的预转化催化剂还原流程进行了改进。先跳开预转化反应器,利用转化炉制取氢气,再用自产的高纯氢气代替重整氢,对预转化催化剂进行单独升温还原,避免了催化剂在还原初期因发生甲烷化反应而超温失活的问题,使催化剂具有更好的活性和稳定性。     

热作模具钢表面激光堆焊耐磨合金层的研究

本文主要通过在H13钢上用大功率CO_2激光束进行堆焊,阐述了激光堆焊工艺变化对堆焊组织和性能的影响,在本试验条件下,得到了高密度弥散金属化合物组织的激光堆焊层,平均硬度为HV800,与基体呈冶金结合,耐磨性比H13模具钢提高149%。     

亚麻织物无醛免烫整理工艺研究

采用多元羧酸聚合型无醛免烫整理剂处理亚麻织物，确立了整理剂、催化剂、添加剂用量等最佳工艺条件，整理后亚麻织物的免烫性能得到了明显的改善。     

聚氨酯胶粘剂在苯板夹心板生产中的应用

简要介绍了聚氨酯胶粘剂在彩钢板／聚苯乙烯夹心板生产中的应用、采用双组分无溶剂发泡型聚氨酯胶粘剂生产夹心板的工艺。对胶粘剂配制中原料的选择和工艺参数的确定进行了讨论。采用由聚醚、水、催化剂等配成的混合物为A组分，多异氰酸酯作为B组分，制成的发泡型聚氨酯胶粘剂具有固化速度快、成本低、实用效果好等优点，滴胶和抹胶的施工方法工艺简单，可满足夹心板生产的需要。     

合成己二腈反应技术研究——(Ⅴ)己二腈工业反应过程模拟与反应器改造

对己二腈工业反应器提出了两釜串联带回流的模型,通过模拟计算得出模型的级间返混系数 f=6的结论。该模型能较好地预测工业反应器中物料组分浓度变化和气、液两相的流动特性;指出了现工业反应器的鼓泡中和段体积偏小是造成己二酸浓度偏高的关键;提出了可以通过增加串连一个鼓泡预反应段的改造方案,能有效地降低己二酸的浓度,从7%降至4%左右,从而能较好地减缓腐蚀和结焦。     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

LDD方法在提高电路工作电压中的应用研究

研究了利用轻掺杂漏结构来制作高电源电压器件的工艺方法。分析了ＬＤＤ结构参数对器件击穿特性的影响，并结合实验结果对Ｎ＾－区的注入剂量，长度及引入的串联电阻进行了优化设计。     

NMOS器件两次沟道注入杂质分布和阈电压计算

分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。对两次注入杂质的扩散分别提取了扩散系数的氧化增强系数、氧化衰减系数和有效杂地系数，给出了表面浓度与工艺参数之间的模拟关系式，以峰值浓度为强反型条件计算了开启电压，文章还给出了开启电压、氧化条件、不同注入组合之间的关系式。