Electrochemical Isolation and Determination of GCP Phase in a Fe-Cr-Ni Alloy

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Cu/ZrO2催化剂的研究进展及其应用

综述了催化剂Cu／ZrO2的制备方法及其在CO／H2、CO2／H2合成甲醇、NOx的分解、醇胺脱氢合成氨基酸、CO的氧化及CO＋NO反应等方面的应用。     

Voltammetric investigations on the transition between dissolution, passivation and deposition characteristics of Ni, Cu and their alloys in fluorine based ionic liquid

Multisweep cyclic voltammetric (CV) responses of nickel, copper, Monel and nickel–copper alloy had been extensively studied and compared in a variety of non-aqueous solvents such as acetonitrile (AN), propylene carbonate (PC) and sulfolane containing triethylamine trishydrogen fluoride (TEA·3HF) ionic liquid. The quantity of dissolution as well as surface morphological transformation on the electrode surfaces as a result of anodic polarization were investigated using atomic absorption spectroscopy (AAS) and scanning electron microscopy (SEM) respectively. The nature of crystallites formed on the polarized electrode was characterized using X-ray diffraction (XRD). The voltammetric study clearly indicates that Ni, Monel and Ni–Cu alloy are passive and stable in neat TEA·3HF medium in the recorded potential region of CV. Surface morphology of Ni after polarization, reveals the generation of pits, whereas the evolution of small crystallites of CuF₂ are noted on the polarized alloy material, as evidenced by SEM pictures. Copper electrode shows reversible voltammetric characteristics with high charge recovery ratio (q_c/q_a) suggesting that in this medium, Cu can certainly serve as reference electrode. Addition of water in TEA·3HF medium increases the solubility and stability of these metal fluoride film. In solvents such as PC, AN and sulfolane containing TEA·3HF, Ni and their alloys exhibit remarkable passivity and the charge recovery ratio decreases to some extent for Cu. In TEA·3HF/AN medium, the dissolution of Cu is very high. The present investigation suggests that the relative stability of all the four electrodes in neat TEA·3HF and solvents containing 0.1 M TEA·3HF decreases in the order: Ni > Monel > Ni–Cu alloy > Cu and relative solubility of metal fluoride films in the three solvents increases in the order: PC < sulfolane < AN.     

Cu(II)-catalyzed THM formation during water chlorination and monochloramination: A comparison study

The catalytic effect of Cu(II) on trihalomethane (THM) formation during chlorination and monochloramination of humic acid (HA) containing water was comparatively investigated under various pH conditions. Results indicate that in the presence of Cu(II), the formation of THMs was significantly promoted as pH decreased in both chlorination and monochloramination. More THMs were formed during Cu(II)-catalyzed monochloramination which was partially due to enhanced hydroxyl radical (OH) generation as demonstrated by electron spin resonance (ESR) analysis. To discriminate the reactive moieties of HA, nine model compounds, which approximately represented the chemical structure of HA, were individually oxidized by chlorine or monochloramine. Results show that Cu(II) could promote THM formation through reacting with citric acid and similar structures in HA. During chlorination and monochloramination of citric acid in the absence of Cu(II), major intermediates including chlorocarboxylic acid, chloroacetone and chloroacetic anhydride were identified. However, the catalysis of Cu(II) did not produce any new intermediate. The complexation of Cu(II) with model compounds was characterized via FTIR analysis. The reaction mechanism for Cu(II)-catalyzed THM formation was proposed to comprise two pathways: (1) indirect catalysis in which OH oxidizes the large molecules of HA into small ones to enhance THM formation; and (2) direct catalysis in which Cu(II) complexes with HA to accelerate the decarboxylation steps for THM formation.     

Reaction characteristics of the Au-Sn solder with under-bump metallurgy layers in optoelectronic packages

The reaction characteristics of molten Au/Sn eutectic solder with potential diffusion-barrier materials of optoelectronic packages were investigated. The characteristics were studied by reflowing the solder on Pt, Ni, and Co plates, respectively, and by measuring the thickness of the reaction product. In addition, the dissolution rate of Pt into the solder was measured. The results indicated that Pt, which is commonly used as the diffusion-barrier layer in the under-bump metallurgy (UBM) of optoelectronic packages, reacts readily with the molten solder, resulting in discontinuous reaction products at the solder/Pt interface. Cobalt, on the other hand, reacted with the solder at an order of magnitude slower rate than that of Pt and provided an effective barrier against the reaction with the solder.     

Regulating Surface and Grain‐Boundary Structures of Ni‐Rich Layered Cathodes for Ultrahigh Cycle Stability

The wide applications of Ni‐rich LiNi_1‐x‐yCo_xMn_yO₂ cathodes are severely limited by capacity fading and voltage fading during the cycling process resulting from the pulverization of particles, interfacial side reactions, and phase transformation. The canonical surface modification approach can improve the stability to a certain extent; however, it fails to resolve the key bottlenecks. The preparation of Li(Ni_0.4Co_0.2Mn_0.4)_1‐xTi_xO₂ on the surface of LiNi_0.8Co_0.1Mn_0.1O₂ particles with a coprecipitation method is reported. After sintering, Ti diffuses into the interior and mainly distributes along surface and grain boundaries. A strong surface and grain boundary strengthening are simultaneously achieved. The pristine particles are fully pulverized into first particles due to mechanical instability and high strains, which results in serious capacity fading. In contrast, the strong surface and the grain boundary strengthening can maintain the structural integrity, and therefore significantly improve the cycle stability. A general and simple strategy for the design of high‐performance Ni‐rich LiNi_1‐x‐yCo_xMn_yO₂ cathode is provided and is applicable to surface modification and grain‐boundary regulation of other advanced cathodes for batteries.     

Correlations Between Growth Kinetics and Microstructure for Scales Formed by High-Temperature Oxidation of Pure Nickel. II. Growth Kinetics

The oxidation kinetics of high-purity nickel were studied between 500 and 1200°C, in pure oxygen at atmospheric pressure, for average oxide-scale thicknesses of 1, 5, 10, and 30 m. In the overall temperature range studied, a decrease in the parabolic rate constant k_p with increasing scale thickness was observed. Depending on temperature and oxide-scale thickness, growth kinetics can be interpreted as a mixture of parabolic- and cubic-growth kinetics. Possible correlations between growth kinetics and microstructures of the oxide scales were investigated. From this set of experimental data, oxidation-kinetics models were tested. In particular, the effect of grain-boundary diffusion on NiO-growth kinetics was discussed. The correlations between growth kinetics and oxide microstructures appear to be more complex than usually reported.     

Mg2Si热电材料与Cu/Ni复合电极的接头界面及性能

为保证热连接过程中热电材料与导流电极之间实现良好连接,同时形成有效的阻隔界面防止界面元素扩散致使材料性能下降,本研究以Cu片作电极,引入中间层Ni箔作扩散阻挡层,采用电场激活压力辅助烧结(FAPAS)法,在合成高纯硅化镁(Mg_2Si)热电材料的同时,同步制得Cu/Ni/Mg_2Si热电接头。利用SEM、EDS以及XRD对接头界面的微观相组成、元素扩散特征以及新相生长规律进行了探讨,并且采用热震试验和四探针法对接头分别进行了力学性能和电传输性能的测试。结果表明,合成的Mg_2Si纯度高,高温热膨胀性能稳定;Ni层能有效阻隔界面元素扩散,与Mg_2Si实现良好的冶金结合,连接界面新相层的生成次序依次为Mg_2Si Ni3和Mg2Ni。Cu/Ni/Mg_2Si具有较好的热膨胀匹配性能,连接界面在持续60次的热震循环后依然保持完整。随着时效时间延长,界面扩散层增厚,接触电阻有所增大,与t~(1/2)具有近线性关系,且700℃下未时效的接头获得最小接触电阻率112μ?·cm~2。     

Influence of Al addition on microstructures of Cu−B alloys and Cu−ZrB2 composites

The influence of Al addition on the microstructure of Cu−B alloys and Cu−ZrB₂ composites was investigated using scanning electron microscopy, X-ray diffraction and first-principles calculation. The results show that the eutectic B in Cu−B alloys can be modified by Al from coarse needles to fine fibrous structure and primary B will form in hypoeutectic Cu−B alloys. As for Cu−ZrB₂ composites, Al can significantly refine and modify the morphology of ZrB₂ as well as improve its distribution, which should be due to its selective adsorption on ZrB₂ surfaces. The first-principles calculation results indicate that Al is preferentially adsobed on ZrB₂ (12(__)10), then on ZrB₂ (101(__)0), and finally on ZrB₂ (0001). As a result, smaller sized ZrB₂ with a polyhedron-like, even nearly sphere-like morphology, can form. Due to Al addition, the hardness of Cu−ZrB₂ composites is greatly enhanced, but the electrical conductivity of the composites is seriously reduced.