Epitaxial TiN based contacts for silicon devices

We have grown high quality epitaxial TiN/Si(100) and Cu/TiN/Si(100) heterostructures by pulsed laser deposition. The epitaxial TiN films have the same low (15 μΩ-cm) resistivity as TiSi₂ (C-54) phase with excellent diffusion barrier properties. In addition, Schottky barrier height of TiN was close to that of TiSi₂ (0.6-0.7 eV). Auger and Raman spectroscopy revealed that the films were stoichiometric TiN and free from oxygen impurities. The x-ray diffraction and transmission electron microscope (TEM) results showed that the TiN films deposited at 600°C were single crystal in nature with epitaxial relationship TiN|| Si. The Rutherford baskscattering channeling yield for TiN films was found to be in the range of 10–13%. The epitaxy of Cu on TiN was found to be cube-on-cube, i.e., Cull<100>TiN||Si. The Cu/TiN and TiN/Si interfaces were found to be quite sharp without any indication of interfacial reaction. The growth mechanism of copper on TiN was found to be three-dimensional. We discuss domain matching epitaxy as a mechanism of growth in these large lattice mismatch systems, where three lattice constants of Si(5.43?) match with four of TiN(4.24?) and seven units of Cu(3.62?) match with six of the TiN. Thus, for next generation of device complementary metal oxide semiconductor structures, Cu/TiN/Si(100) contacts hold considerable promise, particularly since Cu is a low resistivity metal (1.6 μΩ-cm) and is considerably more resistant to electromigration than Al. The implications of these results in the fabrication of advanced microelectronic devices are discussed.     

精炼30Cr2Ni4MoV低压转子材料在超超临界机组上的应用

采用Ansys有限元方法计算了超超临界机组低压转子的温度场,并整理了精练30Cr2N i4MoV低压转子材料的物理化学特性。通过对两者的分析对比,认为超超临界机组的低压转子采用精练30Cr2N i4MoV完全可以满足设计要求。     

Synthesis and electrochemical studies of the 4 V cathode, Li(Ni2/3Mn1/3)O2

Layered Li(Ni_2/3Mn_1/3)O₂ compounds are prepared by freeze-drying, mixed carbonate and molten salt methods at high temperature. The phases are characterized by X-ray diffraction, Rietveld refinement, and other methods. Electrochemical properties are studied versus Li-metal by charge–discharge cycling and cyclic voltammetry (CV). The compound prepared by the carbonate route shows a stable capacity of 145 (±3) mAh g⁻¹ up to 100 cycles in the range 2.5–4.3 V at 22 mA g⁻¹. In the range 2.5–4.4 V at 22 mA g⁻¹, the compound prepared by molten salt method has a stable capacity of 135 (±3) mAh g⁻¹ up to 50 cycles and retains 96% of this value after 100 cycles. Capacity-fading is observed in all the compounds when cycled in the range 2.5–4.5 V. All the compounds display a clear redox process at 3.65–4.0 V that corresponds to the Ni^2+/3+–Ni^3+/4+ couple.     

大型汽轮发电机转子材料26Cr2Ni4MoV钢疲劳性能的研究

本文研究了大型汽轮发电机转子材料26Cr2Ni4MoV钢的疲劳性能。疲劳裂纹扩展门槛值△K_(th)和扩展速率da/dn的试验结果表明.应力比R严重影响门槛值△K_(th)和扩展速率da/dn。随着应力比的增加,门槛值下降。通过应变片法测量出裂纹尖端的闭合载荷,用裂纹闭合机制合理解释了应力比R对门槛值△K_(th)扩展速率da/dn的影响,提出了门槛值和扩展速率随应力比变化规律。     

1Cr17Ni2不锈钢平衡组织的预测及控制

1Cr 17Ni2不锈钢属于火电大机组零部件所采用的材料之一,因其组织中易产生铁素体而使钢的热加工工艺性能和热处理工艺性能下降。采用Thermo Calc软件对不同条件下1Cr 17Ni2不锈钢的平衡组织进行了定量计算,分析了温度和化学成分两因素对钢的平衡组织的影响规律,在此基础上提出了1Cr 17Ni2 不锈钢化学成分的控制范围和热加工及热处理的温度规范。结果表明,Thermo Calc预测结果与现有试验数据基本上吻合,可以用于指导1Cr 17Ni2 不锈钢的生产和使用。表1参9     

Au线键合中"塌线"问题的研究

目前,在半导体闪存多芯片的金线键合工艺中,为满足堆叠芯片不断增加等结构需要,键合线弧要求更低、更长,制造工艺变得相对更加复杂。针对生产过程中常遇到的塌线问题,通过对金线键合工艺中线弧形成动作的过程分析,以金线弹动现象为线索,探究了生产过程中塌线问题产生的原因,并给出了相应解决方案。经过此研究,长线键合的生产工艺能力得到加强,其成果对新封装产品的研发及基板设计具有有益的参考价值。     

不同压力下螯合剂浓度在碱性Cu CMP中的影响

We propose the action mechanism of Cu chemical mechanical planarization(CMP) in an alkaline solution.Meanwhile,the effect of abrasive mass fraction on the copper removal rate and within wafer non-uniformity(WIWNU) have been researched.In addition,we have also investigated the synergistic effect between the applied pressure and the FA/O chelating agent on the copper removal rate and WIWNU in the CMP process.Based on the experimental results,we chose several concentrations of the FA/O chelating agent,which added in the slurry can obtain a relatively high removal rate and a low WIWNU after polishing,to investigate the planarization performance of the copper slurry under different applied pressure conditions.The results demonstrate that the copper removal rate can reach 6125 °/min when the abrasive concentration is 3 wt.%.From the planarization experimental results,we can see that the residual step height is 562 ° after excessive copper of the wafer surface is eliminated.It denotes that a good polishing result is acquired when the FA/O chelating agent concentration and applied pressure are fixed at 3 vol% and 1 psi,respectively.All the results set forth here are very valuable for the research and development of alkaline slurry.     

毫米波测云雷达回波信号衰减补偿仿真研究

针对毫米波测云雷达受云雨衰减的问题,从雷达I、Q信号角度出发,模拟毫米波测云雷达回波I、Q信号并假设一定的探测环境,进行雷达回波信号衰减补偿仿真试验.试验结果表明,雷达电磁波信号穿过雨区和云区时,在远距离处衰减量很大,通过衰减补偿,信号强度明显增强,目标信号突出.     

Epitaxial Growth of 2D Materials on High-Index Substrate Surfaces

Recently, the successful synthesis of wafer-scale single-crystal graphene, hexagonal boron nitride (hBN), and MoS₂ on transition metal surfaces with step edges boosted the research interests in synthesizing wafer-scale 2D single crystals on high-index substrate surfaces. Here, using hBN growth on high-index Cu surfaces as an example, a systematic theoretical study to understand the epitaxial growth of 2D materials on various high-index surfaces is performed. It is revealed that hBN orientation on a high-index surface is highly dependent on the alignment of the step edges of the surface as well as the surface roughness. On an ideal high-index surface, well-aligned hBN islands can be easily achieved, whereas curved step edges on a rough surface can lead to the alignment of hBN along with different directions. This study shows that high-index surfaces with a large step density are robust for templating the epitaxial growth of 2D single crystals due to their large tolerance for surface roughness and provides a general guideline for the epitaxial growth of various 2D single crystals.     

Structural Aspects of P2-Type Na0.67Mn0.6Ni0.2Li0.2O2 (MNL) Stabilization by Lithium Defects as a Cathode Material for Sodium-Ion Batteries

A known strategy for improving the properties of layered oxide electrodes in sodium-ion batteries is the partial substitution of transition metals by Li. Herein, the role of Li as a defect and its impact on sodium storage in P2-Na_0.67Mn_0.6Ni_0.2Li_0.2O₂ is discussed. In tandem with electrochemical studies, the electronic and atomic structure are studied using solid-state NMR, operando XRD, and density functional theory (DFT). For the as-synthesized material, Li is located in comparable amounts within the sodium and the transition metal oxide (TMO) layers. Desodiation leads to a redistribution of Li ions within the crystal lattice. During charging, Li ions from the Na layer first migrate to the TMO layer before reversing their course at low Na contents. There is little change in the lattice parameters during charging/discharging, indicating stabilization of the P2 structure. This leads to a solid-solution type storage mechanism (sloping voltage profile) and hence excellent cycle life with a capacity of 110 mAh g^-1 after 100 cycles. In contrast, the Li-free compositions Na_0.67Mn_0.6Ni_0.4O₂ and Na_0.67Mn_0.8Ni_0.2O₂ show phase transitions and a stair-case voltage profile. The capacity is found to originate from mainly Ni³⁺/Ni⁴⁺ and O^2-/O^2-δ redox processes by DFT, although a small contribution from Mn⁴⁺/Mn⁵⁺ to the capacity cannot be excluded.