Luminescent nanoclusters array fabricated by pulsed laser beam irradiation

Ordered luminescent nanoclusters array in the form of grating structures are fabricated on silicon (1 0 0) surface by Q-switched Nd:YAG laser beam irradiation of second harmonic wavelength (532 nm) in vacuum. Blue-green photoluminescence (PL) spectrum from the ordered nanoclusters array exhibits two asymmetrical peaks at 2.58 eV and 2.88 eV in the blue-green region corresponding to the bimodal distribution of nano size clusters. The size of the nanoclusters is estimated from the three dimensional quantum-confined model incorporating Gaussian size distribution. When subjected to rapid thermal annealing at 710 °C for 10 min in N₂ atmosphere there is an enhancement of the PL intensity without any change in the peak emission energy and broadening suggesting that the origin of PL is related to quantum confinement effect in Si nanocrystallite. The surface morphology of the irradiated surface varies considerable with the number of laser shots, laser fluence and ambient conditions.     

Characterization of defect accumulation in neutron-irradiated Mo by positron annihilation spectroscopy

Positron annihilation lifetime spectroscopy measurements were performed on neutron-irradiated low carbon arc cast Mo. Irradiation took place in the high flux isotope reactor, Oak Ridge National Laboratory, at a temperature of 80 ± 10 °C. Neutron fluences ranged from 2 × 10²¹ to 8 × 10²⁴ n/m² (E > 0.1 MeV), corresponding to displacement damage levels in the range from 7.2 × 10⁻⁵ to 2.8 × 10⁻¹ displacements per atom (dpa). A high density of submicroscopic cavities was observed in the neutron-irradiated Mo and their size distributions were estimated. Cavities were detected even at a very low-dose of ∼10⁻⁴ dpa. The average size of the cavities did not change significantly with dose, in contrast to neutron-irradiated bcc Fe where cavity sizes increased with increasing dose. It is suggested that the in-cascade vacancy clustering may be significant in neutron-irradiated Mo, as predicted by molecular dynamics simulations.     

Effect of hydrogen on the structure of high-rate deposited SiC on Si by atmospheric pressure plasma chemical vapor deposition using high-power-density condition

Using the atmospheric pressure plasma chemical vapor deposition (AP-PCVD) technique, SiC films were fabricated from the gas mixture of He, H₂, SiH₄ and CH₄ on silicon substrates. High-power-density condition was adopted to sufficiently activate the reactive gas molecules in the plasma. The structure, composition and crystallinity of the films were investigated as functions of the H₂ concentration in the gas mixture and substrate temperature. It was shown that increase in H₂ concentration in the plasma atmosphere reduced the growth temperature of polycrystalline SiC film. As a result, polycrystalline 3C-SiC film of which grain size was of the order of 10 nm could be grown at a substrate temperature of 820 K with a deposition rate of approximately 6.7 nm/s. It was suggested that atomic hydrogen generated with addition of H₂ in the gas mixture considerably affects not only the reaction process at the film-growing surface but also the form of precursors in the atmospheric pressure plasma. The results indicated the possibility of realizing the columnar growth of large 3C-SiC grains on Si substrate when the H₂ concentration and the VHF power were simultaneously increased in the AP-PCVD process.     

Creep behavior of near-peritectic Sn-5Sb solders containing small amount of Ag and Cu

Sn-5%Sb is one of the materials considered for replacing Pb-bearing alloys in electronic packaging. In the present study, the effects of minor additives of Ag and Cu on the as-cast microstructure and creep properties of the Sn-5Sb solder alloy are investigated by means of optical microscopy (OM), scanning electron microscopy (SEM), energy dispersive X-ray spectroscope (EDS) and tensile tests. Results show that addition of Ag and Cu resulted not only in the formation of new Ag₃Sn and Cu₆Sn₅ intermetallic compounds (IMCs), but also in the refinement of the grain size of Sn-5Sb solder. Accordingly, the creep properties of the Ag or Cu-containing solder alloys are notably improved. Attention has been paid to the role of IMCs on creep behavior. The lead-free Sn-5Sb-0.7Cu solder shows superior creep performance over the other two solders in terms of much higher creep resistance and vastly elongated creep fracture lifetime. An analysis of the creep behavior at elevated temperatures suggested that the presence of hard Cu₆Sn₅ and fine SbSn IMCs in the Sn-5Sb-0.7Cu alloy increases the resistance to dislocation movement, which improves the creep properties.     

First temperature stage evolution of irradiation-induced defects in tungsten studied by positron annihilation spectroscopy

The behaviour of vacancy like implantation-induced defects created in the track region of 800 keV ³He ions in polycrystalline tungsten was studied by Doppler broadening spectroscopy as a function of annealing temperature. A slow positron beam, coupled with a Doppler broadening spectrometer, was used to measure the low- and high-momentum annihilation fractions, S and W, respectively, as a function of positron energy in tungsten samples implanted at different fluences from 10¹⁴ to 5 × 10¹⁶ cm⁻². The behaviour of the S(E), W(E) and S(W) plots with the annealing temperature clearly indicates that the irradiation-induced vacancy like defects begin to evolve between 523 and 573 K, whatever the implantation fluence. This first temperature stage evolution corresponds to the migration of the monovacancies created during implantation to form larger vacancy like defects of which depth profile is different from the initial radiation-induced defects one.