P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.     

Study on Preparation and Application of Ti／Si Complex Zeolite

A Ti/Si complex zeolite has been prepared. X-ray diffraction and infrared spectrometry study has shown that two structures, namely the ZSM-5 and MCM-41, exist in the sample. BET tests have revealed that the complex zeolite contains regular mesopores of 2.6 nm. Ultraviolet spectrometry analysis has shown that the Ti species exist in the zeolite skeleton in the form of tetra-coordinate valence. The Ti/Si complex zeolite (TS-1/Ti-MCM-41) has apparently improved catalytic activity with respect to the macromolecular organic compound oxidation as compared to individual components of either Ti or Si containing zeolites (TS-1 and Ti-MCM-41).     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.     

大面积硅锂漂移探测器制备及其性能

制备了大面积硅锂漂移探测器,其性能为:探测器的灵敏面积123.6 cm~2;灵敏层深度2 mm;在室温和300 V反向偏压的工作条件下漏电流小于20 μA;对~(241)Am 5.486 MeV α粒子的能量分辨(FWHM)为77.67 keV。     

DX centers in AlxGa1-xAs bulk alloy,AlAs/GaAs ordered,and disordered superlattices

Properties of theDX centers in Al_0.5Ga_0.5As bulk alloy (b-AL), (AlAs)₂ (GaSa)₂ ordered superlattice (o-SL) and (AlAs) _m (GaAs) _n disordered superlattice (d-SL) (m = 1, 2, 3,n = 1, 2, 3) with the same macroscopic composition were measured and compared. By deconvolution of deep level transient spectroscopy (DLTS) spectrum due to theDX center, we have found a decrease in the number of separate peaks in DLTS spectrum in an intentionally atomic ordered arrangement. Visiting Scholar of the Japan Society for the Promotion of Science. On leave from Department of Electrical Engineering, San Jose State University, San Jose, California 95192-0084, USA.     

高能超声处理Al-1Si合金凝固组织分析

采用高能超声处理Al-1Si合金熔体,借助金相显微镜和电子探针进行组织分析,并测定合金的熔化潜热,分析了熔体中超声空化效应和声流效应影响凝固过程的机理。结果表明,试样晶粒平均尺寸由超声处理前的94μm减小到超声处理后的34μm;合金试样的熔化吸热量由263.90J/g降低为159.81J/g,在熔体中施加高能超声显著改善了合金成分的均匀性并细化了晶粒。     

Direct growth of CdTe on (100), (211), and (111) Si by metalorganic chemical vapor deposition

CdTe epilayers were grown directly on (100), (211), and (111) silicon substrates by metalorganic chemical vapor deposition (MOCVD). The crystallinity and the growth orientation of the CdTe film were dependent on the surface treatment of the Si substrate. The surface treatment consisted of exposure of the Si surface to diethyltelluride (DETe) at temperatures over 600°C prior to CdTe growth. Direct growth of CdTe on (100) Si produced polycrystalline films whereas (lll)B single crystals grew when Si was exposed to DETe prior to CdTe growth. On (211) Si, single crystal films with (133)A orientation was obtained when grown directly; but produced films with (211)A orientation when the Si surface was exposed to DETe. On the other hand, only (lll)A CdTe films were possible on (111) Si, both with and without Te source exposure, although twinning was increased after exposure. The results indicate that the exposure to a Te-source changes the initial growth stage significantly, except for the growth on (111) Si. We propose a model in which a Te atom replaces a Si atom that is bound to two Si atoms.     

Bioactive Ca-P scaffolds used for bone reconstruction

1　INTRODUCTIONSkeletalreconstructionorregenerationisre quiredincasesinvolvinglargedefectscreatedbytu morresection ,trauma ,andskeletalabnormalities .Graftsandflapsofautogenoustissuearetwoofthemostsuccessfulmeansofreconstructionbecausetheyallowthetransplantationofbonecontainingbioactivemolecules,livecells ,andfrequently ,avascularsup plythatallowthetransplanttosurviveandremodeleveninhostileradiatedenvironments .However ,onlyaminimalamountoftissuecanbeharvestedforauto grafts,anditisverydiff…     

Electron microscope studies of InxGav1−xAs/GaAs/Si grown by metalorganic chemical vapor deposition

The microstructure of In_xGa_1−xAs/GaAs (5 nm/5 nm, x < 0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100) at 450‡C, and subsequently annealed at 750‡C, is investigated using plan-view and cross-sectional transmission electron microscopy. The variations in resultant island morphology and strain as a function of the In content were examined through the comparison of the misfit dislocation arrays and moirés observed. The results are discussed in relation to the ways in which the island relaxation process changes for high In content.     

Thermophysical properties data on molten semiconductors

Thermophysical properties of molten semiconductors are reviewed. Published data for viscosity, thermal conductivity, surface tension, and other properties are presented. Several measurement methods often used for molten semiconductors are described. Recommended values of thermophysical properties are tabulated for Si, Ge, GaAs, InP, InSb, GaSb, and other compounds. This review shows that further measurements of thermophysical properties of GaAs and InP in the molten state are required. It is also indicated that a very limited amount of data on emissivity is available. Space experiments relating to thermophysical property measurements are described briefly.Nomenclature Density - C _p Specific heat - Kinematic viscosity - Dynamic viscosity= - Thermal diffusivity - Thermal conductivity=C_p - Volumetric thermal expansion coefficient - Surface tension - d/dT Temperature coefficient of surface tension - g Gravitational acceleration - T Temperature - T Temperature difference - L Characteristic dimension