On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes

The temperature dependence of capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of metal-insulator-semiconductor (Al/Si₃N₄/p-Si) Schottky barrier diodes (SBDs) was investigated by considering series resistance effect in the temperature range of 80-300 K. It is found that in the presence of series resistance, the forward bias C-V plots exhibit a peak, and experimentally show that the peak positions with a maximum at 260 K shift toward lower voltages with increasing temperature. The C-V and (G/w-V) characteristics confirm that the interface state density (N_ss) and series resistance (R_s) of the diode are important parameters that strongly influence the electric parameters of MIS structures. The crossing of the G/w-V curves appears as an abnormality compared to the conventional behavior of ideal Schottky diode. It is thought that the presence of series resistance keeps this intersection hidden and unobservable in homogeneous Schottky diodes, but it appears in the case of inhomogeneous Schottky diode. In addition, the high frequency (C_m) and conductance (G_m/w) values measured under both reverse and forward bias were corrected for the effect of series resistance to obtain the real diode capacitance.     

离子注入聚(2-甲氧基-5-辛氧基)对苯乙炔薄膜的改性研究

采用能量为 ( 10～ 35 )keV ,剂量为 ( 3 0× 10 15～ 4 8× 10 17)ions/cm2 的氮离子 (N+)对聚 ( 2 甲氧基 5 辛氧基 )对苯乙炔 (PMOCOPV)进行离子注入改性。PMOCOPV薄膜的电导率随注入离子能量和剂量的增加而迅速提高。当注入N+的能量为35keV ,剂量为 4 8× 10 17ions/cm2 时 ,PMOCOPV薄膜的电导率为 0 0 96S/cm ,比本征态的电导率提高了 7个数量级。通过超高阻测试仪研究了PMOCOPV薄膜表面电导率与温度的关系 ,发现N+注入PMOCOPV薄膜的电导活化能为 0 15 6eV。离子注入PMOCOPV薄膜的电导率的环境稳定性优于I2 和FeCl3 掺杂的PMOCOPV。对离子注入PMOCOPV薄膜的导电机理进行了初步探讨。     

Impedance model of electrolyte-insulator-semiconductor structure with porous silicon semiconductor

We present a generic impedance model for the porous silicon|electrolyte structure that is valid for a range of interfacial layers and bias in these structures. The model is validated using three widely different porous structures: short irregular silicon columns and pores, long cylindrical silicon columns and pores; and branched interconnected silicon microchannels and voids in a mesh structure. The model incorporates appropriate RC or constant phase elements for the different parts of the porous structure, namely, the top of the silicon columns (channels)|electrolyte, the column (channel) walls|electrolyte in the pores/channels, and the electrolyte|semiconductor interface at the base of the pores/channels. This physical model underscores the effects of column/channel depletion and accumulation, either due to applied bias or change of surface charge, to the impedance spectra of the device. The model helps to explain why the porosity needs to be optimized for specific applications and helps as a measurement tool for optimization.     

Analysis of the structure and conductance of Mg2+ acceptor-doped CaBi2Nb2-xMgxO9-3x/2 piezoceramics

In this work, Mg²⁺-doped CaBi₂Nb₂O₉ (CBN-xMg) lead-free piezoceramics were prepared by a common solid-state method to investigate the effects of Mg²⁺ doping content on crystal structure, electrical resistivity, and dielectric and ferroelectric properties. XRD and Raman spectroscopy show that the Mg atoms enter the B-site to form a solid solution of the pure CBN phase. In addition, the XRD refinement results show that Mg²⁺ doping increases the distortion of the NbO₆ octahedron and simultaneously enhances the total contribution of the spontaneous polarization of each position along the a-axis, and that the P_s increases from -28.678 μC/cm² for x = 0 to -31.768 μC/cm² for x = 0.02. However, when x > 0.02, the polarization decreases due to the oxygen vacancy pinning effect. According to SEM analysis, Mg²⁺ doping strengthened the growth rate of CBN ceramic grains on the a-b plane, resulting in a more obvious plate-like structure. The reduced anti-site defects of the CBN ceramic samples strengthened the structure of (Bi₂O₂)²⁺ and improved the resistivity of the samples. The internal dipole moment was also strengthened, resulting in a significant increase in the dielectric constant and a decrease in the dielectric loss. In general, Mg²⁺ doping significantly improved the comprehensive properties of CBN ceramics, with improved values including a d₃₃ of 11.1 pC/N, P_r of 7.22 μC/cm², tanδ (600 °C) of 3.0%, and ρ_dc (600 °C) of 10⁸ Ω?cm.     

Oscosurvismeter,A New Instrument for Osmotic Pressure,Conductance, Viscosity,and Surface Tension Measurements of Liquid Solutions of Chemical Substances

Abstract

The Oscosurvismeter is made of borosil glass material for measuring osmotic pressure (π), specific conductance (κ), viscosity (η), and surface tension (γ) of solutions. Solutions of different strengths are taken in two cells/compartments, partitioned by a semi‐permeable membrane (SPM). A concentration gradient makes the solvent move towards the concentrated solution to establish an equilibrium; this measures osmotic pressure (π). The Oscosurvismeter saves time and materials, and enhances accuracy and precision in measurements; the instrument consists of six parts: (1) survismeter; (2) osmometer; (3) electrode; (4) metallic clamp; (5) semipermeable membrane (SPM); and (6) high potential metallic springs. High accuracy data are noted with the instrument.     

双真空主动型氢脉泽真空系统设计

清洁、抽速稳定的高真空系统是氢脉泽工作必不可少的组成部分之一。文章详细介绍了双真空主动型氢脉泽真空系统的组成及各个组成部分的设计思路、方法。内容涉及真空的获得、真空泵的选择、氢脉泽物理部分双真空系统设计、流导及抽速的计算、泵体结构的设计和实验验证。实验发现,设计完毕的氢脉泽双真空系统保温效果较以前大幅改善,内外真空室本底流量为0.1 mA,工作流量值稳定在0.7mA时氢脉泽稳定输出-105 dBm信号,关闭流量后内真空抽真空本底时间约为8 min。表明内外真空室离子泵均达预期设计指标且工作正常。此外,该设计还进一步减小了脉泽体积、减轻了其重量,向氢脉泽小型化迈出了坚实一步。     

自动电导滴定仪的构想及其应用

通过逐点线性分析技术软件对电导滴定数据进行分析表明,该技术与自动滴定装置、电导测定装置和计算机自动控制技术有机组合,可自动判定电导滴定终点,从而制作成自动电导滴定仪,实现电导滴定的自动化。自动电导滴定仪在标定标准溶液中具有极高的准确度和精密度。同时,该仪器可制作成各种专用分析仪,取代现有的部分重量分析方法,实现这些物质的准确、快速分析。     

乳清含盐量与电导关系曲线

含盐乳清粉、脱盐乳清粉或乳清溶液，其含盐量都可以用灰化法测定。由于灰化法试样在马福炉内灼烧所需时间长，在脱盐乳清粉的生产过程中及时控制盐分结果就难以做到。这样对于批量生产脱盐乳清粉非常不利。本文开发的电导测定法使用电导仪测出已和含盐量的乳清的电导率，在不同温度下（２０°±１℃；６０±１℃）作出电导率与食盐量的关系曲线，这样在生产脱盐乳清过程中，几分钟即可用电导计法测出明盐乳液的含盐量。     

Strongly Modulated Conductivity in Ag/PLZT/LSCO Field-Effect Transistor

A possibility of deep (>70%) modulation of La 1.94 Sr 0.06 CuO 4 and La 1.85 Sr 0.15 CuO 4 channel conductance has been shown in all-perovskite field effect transistor with a (Pb 0.95 La 0.05 )(Zr 0.2 Ti 0.8 )O 3 ferroelectric as a gate insulator. Relatively low carrier density (～10 18 m 10 19 cm m 3 ), small thickness, and rather high surface quality of the channel have provided the penetration of the electric field into the major part of the channel and deep conductance modulation, sufficient, in principle, for operation of a nonvolatile memory cell with a nondestructive readout of information.     

差热分析法测定固体AgI的电导活化能和相转变熵

差热分析（DTA）是一种基于温度程序变化下测量试样与参比温度差的方法,是热化学的基本测量技术。应用DTA也能测量固体电解质某一构型相转变时动力学参数电导活化能Ea和相转变熵△trssm,这种测量方法具有快速性,样品量少,数据分析简单易行等优点。