电导法研究紫外光预辐照对核孔膜径迹蚀刻的影响

利用紫外光辐照聚碳酸酯（PC）离子径迹膜,研究光辐照对于核孔膜蚀刻过程的影响。实验结果显示,紫外光照射对核孔膜的蚀刻有着重要的作用,它可以有效地增加径迹的蚀刻速率,并且径迹蚀刻速率随紫外光照时间的增加呈线性增长关系,此现象是由于光降解作用引起的。本文还介绍了用于监测核孔膜蚀刻过程的电导测量方法,利用此方法可以得出核孔膜径迹蚀刻速率、孔径随蚀刻时间变化等关系。     

支撑双层类脂膜电极的温度补偿方法

提出了一种基于支撑双层类脂膜（S-BLM）电导的电极过程温度补偿方法。利用S-BLM电导传感器测试系统,研究了S-BLM电导与温度的关系。在线性假设的前提下,用最小二乘参数估计法,推导了S-BLM电导传感器特性曲线的斜率、截距与温度的线性方程,进而根据传感器曲线特性得到了S-BLM电极过程的温度补偿模型,并给出了LabVIEW平台下的实现方法。通过对线性假设的效果检验及精度分析,以及通过温度补偿模型的实际测试,证实了本文提出方法的有效性和实用性。     

Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high-low frequency capacitance and conductance methods

The purpose of this paper is to analyze electrical characteristics in Au/SiO₂/n-Si (MOS) capacitors by using the high-low frequency (C_HF-C_LF) capacitance and conductance methods. The capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements have been carried out in the frequency range of 1 kHz-10 MHz and bias voltage range of (−12 V) to (12 V) at room temperature. It was found that both C and G/ω of the MOS capacitor were quite sensitive to frequency at relatively low frequencies, and decrease with increasing frequency. The increase in capacitance especially at low frequencies is resulting from the presence of interface states at Si/SiO₂ interface. Therefore, the interfacial states can more easily follow an ac signal at low frequencies, consequently, which contributes to the improvement of electrical properties of MOS capacitor. The interface states density (N_ss) have been determined by taking into account the surface potential as a function of applied bias. The energy density distribution profile of N_ss was obtained from C_HF-C_LF capacitance method and gives a peak at about the mid-gap of Si. In addition, the high frequency (1 MHz) capacitance and conductance values measured under both reverse and forward bias have been corrected for the effect of series resistance (R_s) to obtain the real capacitance of MOS capacitors. The frequency dependent C-V and G/ω-V characteristics confirm that the N_ss and R_s of the MOS capacitors are important parameters that strongly influence the electrical properties of MOS capacitors.     

双向电流法测量溶液电导

测量溶液电导时，用一等幅双向恒定的电流脉冲连续地施加于电导池，然后对该电导池的电压求积分，测得该电压与时间曲线下的面积值，而该面积即是与溶液的电阻值成正比。它与电导池自身的等效串联电容Ｃｘ无关，实际上只要再提供相应的脉冲周期，它也同样地独立干溶液自身的等效并联电容Ｃｐ。     

Conductance of nanowires: Phonon effects

Continuum models are applied to derive phonon modes for carbon nanotubes (CNTs) of finite length; phonon-confinement and geometrically-determined mode symmetries are taken into account to derive suitable phonon modes for such nanowires. In addition, conductance values are estimated for quantum wires fabricated of a variety of polar semiconductors.     

Effect of ITO electrode on conductance quantization and multi-level cells in TiN/SiOx/ITO devices

In this work, we study TiN/SiO_x/ITO devices to implement conductance quantization and multilevel conductance for high-density memory applications. We observed stepwise conductance with integer and half-integer multiples under pulse and DC voltages. We predict this device's conductance quantization to be a combined result of the formation and rupture of oxygen vacancies in SiO_x film and the formation of O₂^?rich ITO layers due to the oxidation reaction between ITO and SiO_x. Furthermore, it was found that TiN/SiO_x/ITO RRAM devices could stably endure each conductance level.