基于改进变步长电导增量法的MPPT控制

针对光伏系统最大功率点跟踪控制速度不稳定的问题,提出一种改进的变步长电导增量法。对电导增量法变步长的触发条件进行改进,确定变步长的使用范围,并选取适当的缩放系数,使光照强度发生变化时可稳定地跟踪最大功率点。仿真结果表明,该算法在光照强度发生大幅度变化时,具有较快的响应速度和较高的跟踪精度。     

Experimental crack identification using electrical impedance tomography

This paper addresses the problem of practical crack identification in electrically conducting specimens using only boundary measurements. The method is commonly referred to in the literature as Electrical Impedance Tomography (EIT).Crack identification is determined from the electrical impedance distribution, which amounts to solving an inverse problem, starting from boundary measurements. Whereas this kind of inverse problem has been extensively addressed in its theoretical and numerical aspects, there is a scarcity of experimental results aimed at examining the applicability of the method for real conditions.We present new experimental results, based on a simple identification methodology. The efficiency and limitations of this method are assessed through a series of numerical simulations and laboratory experiments on two-dimensional geometries. Following a preliminary numerical validation stage, actual crack detection is carried out on a discrete network of resistors, as an approximation to Laplace's equation. Next, experiments are carried out on a continuous conductive medium, containing one and two flaws. Our results show that EIT is a promising candidate for crack identification in real life conditions with a potential for multiple crack detection.     

Increased conductance of individual self-assembled GeSi quantum dots by inter-dot coupling studied by conductive atomic force microscopy

ABSTRACT: The conductive properties of individual self-assembled GeSi quantum dots (QDs) are investigated by conductive atomic force microscopy on single-layer (SL) and bilayer (BL) GeSi QDs with different dot densities at room temperature. By comparing their average currents, it is found that the BL and high-density QDs are more conductive than the SL and low-density QDs with similar sizes, respectively, indicating the existence of both vertical and lateral couplings between GeSi QDs at room temperature. On the other hand, the average current of the BL QDs increases much faster with the bias voltage than that of the SL QDs. Our results suggest that the QDs' conductive properties can be greatly regulated by the coupling effects and bias voltages, which are valuable for potential applications.     

Modified Particle Swarm Optimization technique based Maximum Power Point Tracking for uniform and under partial shading condition

Generation of electricity from solar energy has gained worldwide acceptance due to its abundant availability and eco-friendly nature. Even though the power generated from solar looks to be attractive; its availability is subjected to variation owing to many factors such as change in irradiation, temperature, shadow etc. Hence, extraction of maximum power from solar PV using Maximum Power Point Tracking (MPPT) method was the subject of study in the recent past. Among many methods proposed, Hill Climbing and Incremental Conductance MPPT methods were popular in reaching Maximum Power under constant irradiation. However, these methods show large steady state oscillations around MPP and poor dynamic performance when subjected to change in environmental conditions. On the other hand, bio-inspired algorithms showed excellent characteristics when dealing with non-linear, non-differentiable and stochastic optimization problems without involving excessive mathematical computations. Hence, in this paper an attempt is made by applying modifications to Particle Swarm Optimization technique, with emphasis on initial value selection, for Maximum Power Point Tracking. The key features of this method include ability to track the global peak power accurately under change in environmental condition with almost zero steady state oscillations, faster dynamic response and easy implementation. Systematic evaluation has been carried out for different partial shading conditions and finally the results obtained are compared with existing methods. In addition, simulations results are validated via built-in hardware prototype.     

Analysis of interface trap density of metal-oxide-semiconductor devices with Pr2O3 gate dielectric using conductance method

In this study, the interface trap density of metal-oxide-semiconductor (MOS) devices with Pr₂O₃ gate dielectric deposited on Si is determined by using a conductance method. In order to determine the exact value of the interface trap density, the series resistance is estimated directly from the impedance spectra of the MOS devices. Subsequently, the dispersion characteristics are numerically analyzed on the basis of a statistical model. Lastly, the process-dependent interface trap density of Pr₂O₃ is evaluated. It is concluded that high-pressure annealing and a superior quality interfacial SiO₂ layer are of crucial importance for achieving a sufficiently low interface trap density.     

Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (0 0 1)

Er-doped HfO₂ thin films with Er content ranging from 0% to 15% are deposited by atomic layer deposition on native oxide free Ge(001). The crystallographic phase is investigated by X-ray diffraction and is found to depend on the Er%. The cubic fluorite structure develops on Ge for Er% as low as 4% and is stable after annealing at 400 °C in N₂. Microstrain increases with increasing the Er content within the fluorite structure. Time of flight secondary ion mass and electron energy loss spectroscopy evidence a Ge diffusion from the substrate that results in the formation of a Ge-rich interfacial region which does not present a structural discontinuity with the oxide. The diffusion of Ge is enhanced by the annealing and causes a reordering of the crystal lattice. In annealed films the interface defect density measured by low temperature conductance measurements is found to decrease with decreasing the Er content.     

A Monte Carlo approach to determine conductance distributions in quasi-one-dimensional disordered wires

A detailed analysis of the statistical distribution of conductance P(g) of quasi-one-dimensional disordered wires in the metal-insulator crossover is presented. The distribution P(g) is obtained from a Monte Carlo solution of the Dorokhov, Mello, Pereyra and Kumar (DMPK) scaling equation, showing full agreement with ‘tight-binding’ numerical calculations of bulk disordered wires. Perturbation theory is shown to be valid even for mean dimensionless conductance values <g> of the order of 1. In the crossover from diffusive to localized regimes (<g><1), P(g) presents a characteristic shape different from that observed in surface disordered wires.     

On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/p-Si (MIS) Schottky diodes

The energy distribution profile of the interface states (N_ss) and their relaxation time (τ) and capture cross section (σ_p) of metal-insulator-semiconductor (Al/SiO₂/p-Si) Schottky diodes have been investigated by using the high-low frequency capacitance and conductance methods. The capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of these devices were investigated by considering series resistance (R_s) effects in a wide frequency range (5 kHz-1 MHz.). It is shown that the capacitance of the Al/SiO₂/p-Si Schottky diode decreases with increasing frequency. The increase in capacitance especially at low frequencies results form the presence of interface states at Si/SiO₂ interface. The energy distributions of the interface states and their relaxation time have been determined in the energy range of (0.362-E_v)-(0.512-E_v) eV by taking into account the surface potential as a function of applied bias obtained from the measurable C-V curve (500 Hz) at the lowest frequency. The values of the interface state density (N_ss) ranges from 2.34 × 10¹² to 2.91 ×  10¹² eV⁻¹/cm², and the relaxation time (τ) ranges from 1.05 × 10⁻⁶ to 1.58 × 10⁻⁴ s, showing an exponential rise with bias from the top of the valance band towards the mid-gap.     

High Carrier Density and Metallic Conductivity in Poly(3‐hexylthiophene) Achieved by Electrostatic Charge Injection

The use of electrostatic charge injection (i.e., the transverse field effect) to induce both very large two‐dimensional hole densities (～ 10¹⁵ charges cm^–2) and metallic conductivities in poly(3‐hexylthiophene) (P3HT) is reported. Films of P3HT are electrostatically gated by a solution‐deposited polymer‐electrolyte gate dielectric in a field‐effect‐transistor configuration. Exceptionally high hole field‐effect mobilities (up to 0.7 cm² V^–1 s^–1) are measured concurrently with large hole densities, resulting in an extremely large sheet conductance of 200 μS sq.^–1. The large room‐temperature conductivity of 1000 S cm^–1 together with the very low measured activation energies (0.7–4 meV) suggest that the metal–insulator transition in P3HT is achieved. A maximum in sheet conductance versus charge density is also observed, which may result from near‐filling of the valence band or from charge correlations that lower the carrier mobility. Importantly, the large hole densities in P3HT are achieved using capacitive coupling between the polymer‐electrolyte gate dielectric and P3HT (i.e., the field effect) and not via chemical or electrochemical doping. Electrostatic control of carrier density up to 10¹⁵ charges cm^–2 (～ 10²² charges cm^–3) opens opportunities to explore systematically the importance of charge‐correlation effects on transport in conjugated polymers without the structural rearrangement associated with chemical or electrochemical doping.     

Electronic transport in crystalline magnetotunnel junctions: effects of structural disorder

We have modeled the electrical properties of an Fe–MgO–Fe magnetotunnel junction (MTJ), using a combination of density functional theory and non-equilibrium Green’s functions. We have performed calculations for two series of random perturbations to the atomic coordinates perpendicular to the Fe/MgO interface, and report on the effects of such random variations of the structure on the calculated conductance. We find that the variations lead to significant differences in conductance.