Structural dependence of microwave dielectric properties of spinel structured Mg2(Ti1-xSnx)O4 solid solutions: Crystal structure refinement,Raman spectra study and complex chemical bond theory

Mg₂(Ti_1-xSn_x)O₄ (x?=?0–1) ceramics were prepared through conventional solid-state method. This paper focused on the dependence of microwave dielectric properties on crystal structural characteristics via crystal structure refinement, Raman spectra study and complex chemical bond theory. XRD spectrums delineated the phase information of a spinel structure, and structural characteristic of these compositions were achieved with the help of Rietveld refinements. Raman spectrums were used to depict the correlations between vibrational phonon modes and dielectric properties. The variation of permittivity is ascribed to the Mg₂(Ti_1-xSn_x)O₄ average bond covalency. The relationship among the B-site octahedral bond energy, tetrahedral bond energy and temperature coefficient are discussed by defining on the change rate of bond energy and the contribution rate of octahedral bond energy. The quality factor is affected by systematic total lattice energy, and the research of XPS patterns illustrated that oxygen vacancies can be effectively restrained in rich oxygen sintering process. Obviously, the microwave dielectric properties of Mg₂(Ti_1-xSn_x)O₄ compounds were obtained (${\epsilon }_r$= 12.18, $Q\times f$?=?170,130?GHz, ${\tau }_f$?=??53.1?ppm/°C, x?=?0.2).     

Silicon ribbons and foils—state of the art

Research and development on crystal growth technologies for production of crystalline silicon ribbon have been under way now for three decades. I review here their progress toward establishment of manufacturing capabilities for silicon wafers for photovoltaic applications. I examine technology improvements which are currently being explored for a future generation of low cost solar products based on ribbon wafers, and discuss potential limits of the technology.     

挤压力对晶体生长速度及枝晶间距的影响

研究了挤压铸造时挤压力对宏观晶体生长速度的影响，给出了晶体生长速度表达式。结果表明：挤压力对合金宏观晶体生长速度的影响除与合金成分有关外，在某些挤压条件下，当形核率的增加幅度超过长大速度时，则挤压力可使宏观晶粒细化；反之，会使宏观晶粒变粗。随着挤压力的提高，合金凝固速度加快，一次枝晶间距和二次枝晶间距都随之减小，从而细化了树枝晶。     

八种新功能晶体的比热及其与相变掺杂物关系的实验研究

本文对八种新型功能晶体Ｌｉ２Ｂ４Ｏ７、Ｂｉ１２ＴｉＯ２０、Ｂｉ１２ＧｅＯ２０、Ｂｉ１２ＧｅＯ２０、Ｂｉ４Ｇｅ３Ｏ１２、Ｓｒ１－ｘＢａｘＮｂ２Ｏ６（ｘ＝０．３３，０．４８）、ＬｉＴａＯ３等在１３０～９７３Ｋ范围内的比热行为及其与相变、组分之间的关系进行了实验研究，给出了比热的多项式拟合方程，并与用纽曼－卡普定律及用Ｗｉｋｅｌｍａｎｎ经验方程的比热计算值作了对比，为晶体比热的估算提供了依据和方法。     

布里奇曼法生长碲镉汞晶体的缺陷及其展望

简单介绍了布里奇曼法生长碲镉汞晶体的主要缺陷以及缺陷的控制原理，回顾了国内进行磅镉汞晶体生长的布里奇曼法及加速坩埚旋转技术的布里奇曼法（ＡＣＲＴ－Ｂ）研究的情况，并提出了进一步研究的问题。     

粘土矿物对低渗透储层性质的影响——以鄂尔多斯盆地三叠系低渗透储层为例

粘土矿物是低渗砂岩储层的主要胶结物，对储层物性及开发过程中储层物性变化趋势有着重要的影响和控制作用。另外，粘土矿物也蕴含着大量沉积环境介质的物理化学信息，认识其自然规律，可以有效地指导预测有利储层，认识和改造油层。以鄂尔多斯盆地砂岩储层中的粘土矿物为研究对象，探讨分析粘土矿物对低渗储层性质的影响，该研究对含油气盆地低渗储层有效开发具有一定的参考价值。     

Evaporation and Evolution of Suspended Solution Droplets at Atmospheric and Reduced Pressures

Thermal history and solute precipitation behavior of suspended solution droplets of sodium chloride (NaCl), magnesium sulphate (MgSO₄), and zirconium hydroxychloride (ZrO(OH)Cl) evaporating at atmospheric and reduced pressures are studied. Experimental measurements on the variation of droplet diameter, solution concentration, and temperature during the evaporation period are presented and discussed. The results of solute precipitation behavior in solution droplets observed under an optical microscope are displayed and discussed. Results indicate that reducing the pressure (∼ 33 kPa) results in a change in the solution droplet evaporation rate, but the thermal histories of a particular solution droplet are similar at the atmospheric and reduced pressures. At atmospheric and reduced pressures used in this study, the d² law for solution droplets is valid at early stages of the evaporation and before the solute precipitation initiates. Drying of MgSO₄ and ZrO(OH)Cl solution droplets results in the formation of spherical particles, whereas drying of spherical NaCl solution droplets results in the formation of cubic particles.     

High-yield synthesis of single-crystalline 3C-SiC nanowires by a facile autoclave route

Single-crystalline 3C-SiC nanowires have been synthesized in large scale through a one-step autoclave route by the reaction of SiCl₄, (C₅H₅)₂Fe and metallic Na at 500 °C. Electron microscopy investigations show that the nanowires have typical diameters of 15-50 nm, lengths up to several tens of micrometers and grow along the [111] direction. The possible growth mechanism of the nanowires is discussed.