Concurrent nucleation, formation and growth of two intermetallic compounds (Cu6Sn5 and Cu3Sn) during the early stages of lead-free soldering

This study investigates the concurrent nucleation, formation and growth of two intermetallic compounds (IMCs), Cu₆Sn₅ (η) and Cu₃Sn (ε), during the early stages of soldering in the Cu-Sn system. The nucleation, formation and growth of the IMC layers is simulated through a multiphase-field model [1] and [2] in which the concurrent nucleation of both IMC phases is considered to be a stochastic Poisson process with nucleation rates calculated from classical nucleation theory [3]. CALPHAD thermodynamic models are used to calculate the local contributions to the free energy of the system and the driving forces for precipitation of the IMC phases. The nucleation parameters of the η phase are estimated from experimental results [4] and those of the ε phase are assumed to be similar. A parametric investigation of the effects of model parameters (e.g. grain boundary (GB) diffusion rates, interfacial and GB energies) on morphological evolution and IMC layer growth rate is presented and compared with previous works in which nucleation was ignored [5]. In addition, the resulting growth rates are compared with the available literature and it is found that, for a certain range in the model parameters, the agreement is quite satisfactory. This work provides valuable insight into the dominant mechanisms for mass transport as well as morphological evolution and growth of IMC layers during early stages of Pb-free soldering.     

Stabilization and strengthening of nanocrystalline copper by alloying with tantalum

Nanocrystalline Cu-Ta alloys belong to an emerging class of immiscible high-strength materials with a significant potential for high-temperature applications. Using molecular dynamics simulations with an angular-dependent interatomic potential, we study the effect of Ta on the resistance to grain growth and mechanical strength of nanocrystalline Cu-6.5 at.% Ta alloys. Ta segregation at grain boundaries greatly increases structural stability and strength in comparison with pure copper and alloys with a uniform distribution of the same amount of Ta. At high temperatures, the segregated Ta atoms agglomerate and form a set of nanoclusters located at grain boundaries. These nanoclusters are capable of pinning grain boundaries and effectively preventing grain growth. It is suggested that the nanoclusters are precursors to the formation of larger Ta particles found in Cu-Ta alloys experimentally.     

锡晶须生长机理研究的现状与问题

介绍锡晶须的发现过程以及机制研究和预防策略,总结锡晶须生长过程中已经被一些研究人员发现的特点,如晶须形貌的多样性、生长过程的阶段性以及生长位置的不确定性等。回顾从最初发现锡晶须到现在所提出的用于解释锡晶须生长机理的理论模型,其中主要是位错机制、压应力机制、再结晶机制、氧化膜破裂机制以及活性锡原子机制。在对于这些理论模型的问题进行评述后,对如何进一步探索晶须的生长机理提出一些看法。     

光折变全息干涉计量术及其应用

光折变晶体是一种新型的记录材料,应用光折变效应,不需显影、定影等复杂处理,可实现实时观测,探索了光折变实时全息干涉法在光学检测中的应用,提出了实时监测火焰温度场的新技术,阐述了有关的原理,从理论上推导了有关的实验参数和实验条件,介绍了实验的过程,分析了最后得出的结果。     

ZnO籽晶对ZnO-Bi_2O_3-TiO_2-Sb_2O_3系陶瓷微观结构和压敏性能的影响

研制了添加预制ZnO籽晶的ZnO Bi2 O3 TiO2 Sb2 O3系压敏陶瓷 ,测量了添加不同含量籽晶的ZnO陶瓷的压敏电压 (V1mA)、非线性系数 (α)和漏电流 (IL)等电学性能参数 ,采用XRD和SEM研究了籽晶对ZnO压敏陶瓷微观结构的影响。研究结果表明 ,籽晶的含量对晶粒的生长状况以及Ti4 离子的分布状况都具有显著的影响 ,当ZnO籽晶添加量为 1 0 %时可获得压敏性能最为优化的ZnO陶瓷。     

元胞自动机方法在枝晶生长模拟中的应用

尽管大量关于枝晶生长模拟的研究都使用了相场方法,但近年来元胞自动机(CA)方法在枝晶生长模拟方面也取得了很大进展.介绍了CA方法模拟枝晶生长的原理和模型,评述了CA方法在枝晶模拟方面的发展历程,指出了存在的问题的和进一步研究的方向.     

相场法模拟铸铝凝固过程的枝晶生长

利用相场法对纯铝进行了数值模拟,研究了晶核半径、界面厚度等参数对晶粒形貌的影响.模拟结果与实验结果基本吻合.表明相场方法符合枝晶生长的物理机制,模拟结果接近实验结果.