基于纳米颗粒的铜锌锡硫硒薄膜制备

采用热注入法制备了Cu2ZnSnS4(CZTS)纳米颗粒,并形成高分散、稳定的"墨水",采用滴注方法形成CZTS前驱体薄膜。利用X射线衍射(XRD)、拉曼光谱(Raman)、透射电子显微镜(TEM)和紫外-可见光谱(UV-VIS)对CZTS纳米颗粒的晶体结构、表面形貌和带隙进行了表征。Raman数据显示合成的纳米颗粒为纯的CZTS,不存在ZnS和Cu2SnS3等杂相。傅里叶红外光谱(FTIR)和UV-VIS表明合成的CZTS纳米颗粒表面被油胺(OLA)包覆,并且其带隙为1.52 eV。对CZTS前驱体薄膜在硫化氢气氛和固态硒气氛中退火处理,得到铜锌锡硫硒(CZTSSe)薄膜。结果表明,经硫化氢处理后薄膜表面平整但CZTS晶粒并没长大,而经过固态硒处理后得到了结晶质量较好的CZTSSe薄膜。     

Effect of Ionization Characteristics on Electrochemical Migration Lifetimes of Sn-3.0Ag-0.5Cu Solder in NaCl and Na<Subscript>2</Subscript>SO<Subscript>4</Subscript> Solutions

Anodic dissolution characteristics and electrochemical migration (ECM) behavior of Sn-3.0Ag-0.5Cu solder in NaCl and Na₂SO₄ solutions were investigated using anodic polarization tests and water drop tests (WDT). The ECM lifetime of Sn-3.0Ag-0.5Cu solder in NaCl solution (42.4 s) was longer than that in Na₂SO₄ solution (34.8 s). The pitting potential of Sn-3.0Ag-0.5Cu solder in NaCl solution (135 mV, SCE) was higher than that in Na₂SO₄ solution (−367 mV, SCE). The passivity film (SnO₂) formed on Sn-3.0Ag-0.5Cu solder during WDTs in NaCl solution was thicker than that formed in Na₂SO₄ solution. Therefore, the longer ECM lifetime of Sn-3.0Ag-0.5Cu solder in NaCl solution than in Na₂SO₄ solution can be attributed to the higher pitting potential in the NaCl solution, which is ascribed to the formation of a thicker passivity film (SnO₂) in the former. It was confirmed that microelements such as Ag and Cu do not take part in ECM because they form chemically stable intermetallic compounds with Sn. We believe that Sn is the only element that contributes to ECM, and dissolution of Sn at the anode is possibly the rate-determining step of ECM of Sn-3.0Ag-0.5Cu solder.     

Cu掺杂CaCu_3Ti_4O_(12)陶瓷的介电性能和晶界特征

采用传统的固相反应工艺制备了Cu掺杂的CaCu3Ti4O12(Cu-CCTO)陶瓷。采用Schottky热电子发射模型研究了其晶界特征。研究了保温时间对Cu-CCTO陶瓷的介电性能和晶界特征的影响。结果表明:保温时间从1 h延长到30 h,Cu-CCTO陶瓷在100 kHz下的介电损耗保持在0.135,相对介电常数由3 600增至20 000以上。随着保温时间的延长,Cu-CCTO陶瓷的I-V非线性系数由1.8增至3.37,但击穿电场强度却由1 500 V/cm降至约700 V/cm。随着保温时间的延长,Cu-CCTO陶瓷的势垒高度和耗尽层宽度均增加。     

Nanotwin formation and its physical properties and effect on reliability of copper interconnects

Ultra-fine grained copper with a large amount of nano-scale twin boundaries has high mechanical strength and maintains normal electrical conductivity. The combination of these properties may lead to promising applications in future Si microelectronic technology, especially as interconnect material for air-gap and free-standing copper technologies. Based on first principles calculations of total energy and in-situ stress measurements, high stress followed by stress relaxation during the Cu film deposition seems to have contributed to nanotwin formation. Nanoindentation studies have shown a larger hardness for copper with a higher nanotwin density. The effect of Cu nanotwin boundaries on grain growth was investigated by scanning electron microscopy (SEM), electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM). The presence of a high density of nanotwin boundaries may improve the reliability of Cu interconnects.     

SnAgCu体钎料及BGA焊球焊点纳米级力学性能

为了研究低银Sn-0.3Ag-0.7Cu无铅体钎料、BGA焊料小球和BGA焊点的力学行为,基于物理反分析的方法采用纳米压痕仪对其进行实验。从压痕载荷–深度曲线提取出弹性模量、硬度和蠕变速率敏感指数。结果表明:体钎料的杨氏模量和蠕变速率敏感指数大约是BGA焊料小球和BGA焊点的2.5倍,验证了尺寸效应理论。采用纳米压痕仪测出的体钎料维氏硬度(15.101HV)小于显微硬度计的测量结果(20.660HV)。     

电子封装用SiC_p／Cu复合材料制备与性能

采用挤压铸造方法制备了体积分数为55％、不同颗粒粒径增强的电子封装用SiCp／Cu复合材料,并分析了颗粒尺寸和热处理状态对材料物理性能和力学性能的影响规律。显微组织观察表明SiC颗粒分布均匀,复合材料组织致密;随着SiC颗粒尺寸的减小,复合材料的平均线膨胀系数和热导率均降低;退火处理可以降低复合材料的热膨胀系数,同时提高材料的热导率。复合材料具有高的弯曲强度和弹性模量,退火处理后材料的弯曲强度降低,但弹性模量变化不大。     

Impact of barrier deposition process on electrical and reliability performance of Cu/CVD low k SiOCH metallization

Integration of Cu with low k dielectrics provided solution to reduce both resistance-capacitance time delay and parasitic capacitance of BEOL interconnections for 130 nm and beyond technology node. The motivation of this work is to study and improve electrical and reliability performance of two-level Cu/CVD low k SiOCH metallization from the results of diffusion barrier deposition schemes. Barrier deposition schemes are (a) high-density-plasma 250 Å Ta; (b) surface treatment of forming gas followed by high-density-plasma 250 Å Ta and (c) bi-layer of 100 Å Ta(N)/150 Å Ta. In this work, we demonstrated the superior and competency of high-density-plasma Ta deposition for Cu/CVD low k metallization and achieved excellent electrical and reliability results. Wafers fabricated with high-density-plasma Ta barrier scheme resulted in the best electrical yields, >90% for testing vehicles of dense via chains (via size=200 nm) and interspersed comb structures (width/space=200 nm/200 nm). Dielectric breakdown strength of the interspersed comb structures obtained at electric field of 0.3 MV/cm was ∼4 MV/cm.     

New techniques in SIMS analysis of HgCdTe materials

This paper presents two new approaches used in the secondary ion mass spectrometry (SIMS) for high sensitivity dopant and impurity analysis in HgCdTe materials, namely, the high mass resolution with dynamic transfer and the MCs⁺ technique. It is shown that better detection limits for As and Cu can be obtained at a level of 2–5e14 at/cm³. The MCs⁺ technique has added advantages of better measurement precision, monitoring Cd composition in the same profile, and small device area analysis capability. Advantages and trade-offs of each technique are discussed and compared. An updated detection limit table for all elements measured in HgCdTe materials using SIMS is also presented.     

高Q值铜内电极MLCC的研制

以铜为内电极和端电极,制备了NPO MLCC.研究了陶瓷粉体成分、内电极材料和烧结工艺对所制MLCC性能的影响.结果表明:选用Mg-Si-O3系瓷粉匹配纯铜内电极浆料,在弱还原气氛保护下进行低温(900～1 020℃)烧结,所制MLCC样品电性能良好,成本低,其中,0603规格10pF样品在1 GHz下的Q值高达60、...