Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.     

Tribological behavior of PTFE nanocomposite films reinforced with carbon nanoparticles

Carbon-based nanoparticles synthesized by heat treatment of nanodiamond in the temperature range of 1000–1900 °C were added to PTFE film to investigate the structural effect of the carbon particles on the tribological properties of PTFE composite film. Carbon-based nanoparticles were prepared by milling with micron sized beads in chemically treated water before their addition to PTFE film. The wear and frictional properties of PTFE nanocomposite film were measured by the ball on plate type wear test. The wear resistance of PTFE film was found to be enhanced by the addition of 2 wt% of carbon nanoparticles. The wear coefficient of PTFE film was decreased from 16.2 to 3.5 × 10⁻⁶ mm³/N m by the addition of carbon-based nanoparticles heat-treated at 1000 °C. Increasing the heating temperature of the nanodiamonds caused the extent of aggregation and particle size to increase. The wear resistance of PTFE nanocomposite film was enhanced by the addition of nanodiamonds heat-treated at 1000 °C, but decreased when the heat treatment temperature of carbon nanoparticles was further increased. Tribological behavior of PTFE nanocomposite films depending on the types of carbon nanoparticles were explained based on the structural, physical and chemical modification of carbon nanoparticles.     

Improvement of photon collection in Cu(In,Ga)Se2 solar cells and modules by fluorescent frequency conversion

Fluorescent photon down conversion for the improvement of the blue response of ZnO/CdS/Cu(In,Ga)Se₂ heterojunction solar cells and modules is investigated. Fluorescent dyes of the series Lumogen® F are analyzed by optical transmission and reflection as well as by photoluminescence measurements. A spectral transfer matrix formalism is introduced that allows to predict the suitability of a luminescent dye as a down-converter for a given solar cell from its absorption/emission properties. We find that Lumogen® F Violet 570 and Lumogen® F Yellow 083 as well as a combination of both yields improvements for Cu(In,Ga)Se₂ solar modules. Particularly, we find that the short circuit current density of a Cu(In,Ga)Se₂ mini-module is improved by 1.5 mA cm^− 2 when applying a varnish with a combination of Lumogen® F Violet and Yellow. About 0.5 mA cm^− 2 of this improvement is due to a reduced overall reflectance and an improvement of 1 mA cm^− 2 results from the frequency conversion by the dyes.     

Reversible changes of the fill factor in the ZnO/CdS/Cu(In,Ga)Se2 solar cells

The reversible persistent changes of the fill factor (FF) induced by the illumination and voltage bias along with changes in the electronic properties of the ZnO/CdS/Cu(In,Ga)Se₂ photovoltaic devices have been studied. Admittance spectroscopy and capacitance–voltage characterization reveal a correlation between the FF and the space charge distribution within the absorber. Our experiments provide evidence that a major source of FF loss in efficient devices is caused by excess negative charge close to the interface. We explain the persistent changes in the net acceptor concentration in the interface region by the relaxation effects due to compensating donors—the same mechanism, which leads to metastable changes of the doping level in the bulk of the absorber.     

国产50%离子膜法烧碱蒸发装置及运行情况

介绍了升降膜法双效逆流蒸发生产50%离子膜法烧碱的工艺流程、主要设备、装置特点及运行情况.     

反应温度对聚苯胺薄膜生长的影响

在不同反应温度条件下采用原位聚合法在石英基片上制备了聚苯胺薄膜．对薄膜样品进行了紫外光谱、SEM、电性能表征。实验结果表明，过高的合成温度会加速聚合反应过程，抑制膜厚的增长，引起薄膜的热降解，进而对样品的导电性产生不良影响。根据生长速率与合成温度的依赖关系，估算了聚合反应的活化能Ea=34.4kJ/mol。     

Nanoscale Hybrid Langmuir－Blodgett Films Based on Cerium－Substituted Heteropolymolybdate and Polyquinoline

Nanoscale hybrid organic/inorganic Langmuir-Blodgett films of cerium-substituted heteropolymolybdates (CeHPMo) and π-conjugated macromolecule poly(1,2-dihydro-2,2,4-trimethyl) quinoline (PQ) were obtained with auxiliary film-forming material stearic acid(SA) or octadecylamine(ODA). The surface pressure-area isotherms illuminate the formation of the hybrid LB films of PQ/ODA/Ce-HPMo and PQ/SA/Ce-HPMo. The different film-forming mechanism was discussed when the different auxiliary film-forming materials were used in the system. The absorption spectra indicate that the molecules of PQ and Ce-HPMo are incorporated into the LB films. Tapping-mode AFM image reveals a granular surface texture of nanosized Ce-substituted heteropolymolybdate. STM image shows that the conductivity is greatly improved after Ce-substituted heteropolymolybdates are incorporated in the films.     

Creep Crack Growth in Polypropylene Film with Various Crack Lengths at Diverse Stresses and Temperatures

Creep crack growth rates were measured using centrally cracked tension specimens of thin polypropylene film with different crack lengths at various stresses and temperatures. The creep crack growth rates were correlated with the stress intensity factor. There was the region of the minimum constant crack growth rate which occupied more than 70% of the total creep failure life. This constant creep crack growth rate characteristics were analyzed on the basis of the stress-dependent Arrhenius type thermally activated process.     

掺铝氧化锌(AZO)导电薄膜的研究进展

综述透明导电薄膜的性能、种类、制备工艺、研究及应用状况,重点讨论掺铝氧化锌(AZO)薄膜的结构、导电机理、光电性能和当前的研究焦点。并指出,为了进一步提高透明导电薄膜的性能,应从以材料选择、制备工艺、多层膜光学设计等方面深入研发,以满足尖端技术的需要。     

溶液温度对电化学沉积氧化亚铜薄膜相成分和显微结构的影响

用电化学方法在不锈钢基体上沉积多晶Ｃｕ２Ｏ薄膜并用Ｘ射线衍射和扫描电进行了分析研究了溶液温度对薄膜相组成、晶粒尺寸和择优取向的影响，当溶液的ＰＨ＝９，温度低于５０℃时得到的是Ｃｕ２Ｏ／Ｃｕ复相薄膜，纯Ｃｕ２Ｏ薄膜可在溶液温度高于５０℃时获得，纯Ｃｕ２Ｏ薄膜具有（１００）择优取向，实验发现薄膜的晶粒尺寸随溶液温度的增加从０．１２μｍ增加到０．６５μｍ。