Fabrication of Er3+/Pr3+ Co-doped soda-lime glass thin films using RF magnetron sputtering method and optical property characterization

Er^3+/Pr³⁺ co-doped soda-lime glass thin films have been fabricated using RF magnetron sputtering method and their structural and optical properties have been studied. Deposition rate, crystallinity, and composition of glass thin films were investigated by scanning electron microscopy, transmission electron microscopy, and electron probe micro area analysis. Refractive index, birefringence and binding characteristics have been investigated using a prism coupler and X-ray photoelectron spectroscopy. Er³⁺/Pr³⁺ co-doped soda lime glass thin films were prepared by changing substrate temperature (room temp. ∼550^∘C), RF power (90 W–130 W), and Ar/O₂ gas flow ratio at processing pressure of 4 mTorr. Glass thin films could be obtained at the optimized processing condition at 350^∘C, RF power of 130 W, and gas flow of Ar:O₂ = 40:0 with maximum deposition rate of 1.6 μm/h. Refractive index and birefringence increased from 1.5614 to 1.5838 and from 0.000154 to 0.000552, respectively, as the content of Pr³⁺ increased. Binding energy of Pr3d also increased as the content of Pr³⁺ increased.     

ICPECVD类金刚石膜沉积过程的发射光谱诊断研究

利用发射光谱(Optical emission spectroscopy,OES)对感应耦合等离子体增强化学气相沉积(Inductivelycoupled plasma enhance chemical vapor d印osition,ICPECVD)类金刚石(Diamondlike carbon,DLC)膜过程中的各种基团进行分析,并对不同条件下薄膜沉积速率以及薄膜显微硬度进行测试.分析结果发现,感应耦合等离子体源激发甲烷等离子体中存在比较突出的碳氢离子成分,从而促进形成高硬度的DLC膜.而且射频功率、沉积气压等沉积参数的变化对DLC薄膜沉积过程的中性基团、离子基团以及原子氢等成分都有着明显影响,从而最终影响薄膜沉积过程及薄膜性质.     

钼掺杂降低TiO2氧敏薄膜最佳工作温度研究

用直流反应磁控溅射法在陶瓷基片上制备出TiO2薄膜.并进行1100℃,2h的退火处理.配置钼酸铵溶液,利用浸渍法处理TiO2薄膜若干时间.取出后,进行500℃,3h退火处理.用气敏测试箱对制备出的TiO2薄膜的氧敏特性进行试验测试,发现对氧气有很好的敏感特性,比未经此项工艺处理的TiO2薄膜的最佳工作温度降低100℃,为300℃左右,并进行SEM测试,分析其表面结构,研究气敏机理.     

纳米WO_3薄膜的光学性质及氢敏特性研究

采用磁控直流溅射法制备出纳米WO3薄膜,在N2气中进行退火处理。采用分光光度计、XRD等对退火前后的WO3薄膜进行了光学特性的分析。研究表明:在623 K进行退火处理的薄膜均匀、致密,呈现出较好的结晶态。采用光源激发对纯WO3薄膜在不同温度条件下的氢敏特性进行了研究,实验显示:WO3薄膜对H2的敏感性与温度有关,在348 K温度条件下,WO3薄膜的氢敏效应最好。     

铜抑制剂巯基乙酸的合成工艺

巯基乙酸是硫化铜矿物的抑制剂,广泛用于铜钼浮选分离。本文对巯基乙酸的合成工艺进行了比较研究,认为硫氢化钠法和硫代硫酸钠法生产成本低,适宜于选矿用巯基乙酸的生产,而硫脲法可得到较高浓度的巯基乙酸。     

C/Cu(Fe)复合材料制备工艺及性能研究

利用三步电沉积法制备C／Cu（Fe）复合材料预制丝，将预制丝缠绕成毛坯，采用真空热压法制备C／Cu（Fe）复合材料．研究表明，真空热压工艺对复合材料力学性能有很大影响，通过力学性能试验和对拉伸断口形貌的分析，得出了制备C／Cu（Fe）复合材料的最佳工艺．     

表面处理方式对铜/钼/铜复合材料界面结合效果的影响

借助金相显微镜、扫描电镜观察了钼、铜界面的微观组织，研究了采用不同表面处理方式对铜／钼／铜复合材料界面结合效果的影响，并对其界面的结合机制进行了深人的讨论。结果表明，经过喷砂化学处理的材料复合后界面结合最牢固，界面剪切强度最高，达到78．9MPa，形成很强的铜和钼的机械啮合，其主要的结合机制是机械啮合机制和硬化块破裂机制；在同等复合参数条件下，3种处理方法中化学处理法的界面强度最低。     

离子束混合过程中Au/Fe磁性膜的巨磁电阻效应在线研究

在离子柬混合和强磁场条件下，在线研究了Au/Fe磁性膜的巨磁电阻效应，发现了不同磁场强度下的离子柬混合对巨磁电阻效应影响的规律，以及不同注入条件对样品饱和磁场的影响。讨论了样品由磁性多层膜逐渐向磁性纳米颗粒膜的转变，以及与此相关的纳米磁性颗粒在磁场作用下的非各向同性生长，并通过高分辨透射电镜(TEM)观察证实了磁性膜样品中磁性纳米Fe颗粒存在各向异性生长现象。通过对室温放置了一年以上的磁性纳米颗粒膜样品的电磁物性测量，证明利用离子柬混合技术制备的纳米颗粒膜在室温具有良好的热稳定性和时间稳定性。     

不同底层(Ag, Ti, Cu, Pt)对[Fe/Pt]n多层膜磁性的影响

利用磁控溅射的方法, 在热玻璃基片上制备了[Fe/Pt]n多层膜, 经不同温度真空热处理后, 得到L10有序结构的FePt薄膜(L10-FePt).实验结果表明 [Fe/Pt]n多层膜结构可使FePt薄膜的有序化温度由500 ℃降到350 ℃, 350 ℃退火20 min后其平行膜面矫顽力可达到421.8 kA·m-1.同时以Ag, Ti, Cu和Pt做底层, 利用[Fe/Pt]n多层膜结构制备了FePt薄膜, 磁性和X射线衍射结果表明 与[Fe/Pt]n多层膜相比, 四种底层均没有进一步降低FePt薄膜的有序化温度, 其中Ag做底层对[Fe/Pt]n多层膜退火后的平行膜面矫顽力影响较小, 但能够提高其垂直磁各向异性;其他底层均会降低[Fe/Pt]n多层膜在高温退火时的平行膜面矫顽力, 且对其垂直磁各向异性无改善作用.     

Electrical and optical characterization of Na: CuInS2 thin films grown by spray pyrolysis

The structural, electrical and optical properties of Na-doped CuInS₂ thin films grown by spray pyrolysis were studied. These films crystallized in the sphalerite structure of CuInS₂, and showed to contain traces of indium sulfide and CuIn₅S₈ as impurity phases. All films were In-rich and showed p-type conductivity. The film conductivity was strongly affected by Na-doping, which decreased from 10⁻² to 10⁻⁵ S/cm by increasing the [Na]/[Cu] ratio from 0.005 to 0.03 in the spray solution. The band gap energy was observed to increase, from 1.4 to 1.45 eV, with increasing the [Na]/[Cu] ratio. Our results suggested that Na could be an effective acceptor impurity in sprayed CuInS₂.