Triple tangent flank milling of ruled surfaces

This paper presents a positioning strategy for flank milling ruled surfaces. It is a modification of a positioning method developed by Bedi et al. [Comput Aided Des 35 (2003) 293]. A cylindrical cutting tool is initially positioned tangential to the two boundary curves on a ruled surface. Optimization is used to move these tangential points to different curves on the ruled surface to reduce the error. A second optimization step is used to additionally make the tool tangent to a rule line, further reducing the error and resulting in a tool position, where the tool is positioned tangential to two guiding rails and one rule line. The resulting surface has 88% less under cutting than the method of Bedi et al.     

Electrical characterization of homoepitaxial diamond p–n junction

Electrical properties of homoepitaxial diamond p–n⁺ junction of boron (B)-doped p-type layer and phosphorus-doped n-type layer on Ib (111) diamond single crystal have been characterized. Current–voltage characteristics show a clear rectifying property with rectification ratio of over 10⁵ at ± 10 V. From capacitance–voltage characteristics, it is found that a spatial distribution of space-charge density N_i of the p–n⁺ junction is not uniform and N_i at a middle region of the space-charge layer formed at zero bias voltage is higher than that of other region of the space-charge layer. This peculiar characteristic can be explained by superposition of two effects; one is the deep dopant effect due to B atoms in the p-type layer, which makes to reduce N_i at around the edge of the space-charge layer formed at zero bias voltage. The other is the compensation of B acceptors by impurity atoms diffusing during the p–n⁺ interface and incorporating during the growth of p-type layer, which makes to reduce N_i at the vicinity of the p–n⁺ interface.     

中子辐照金刚石生成卡宾碳

金刚石在中子辐照下发生相转变,得到了线性结构的卡宾碳。所得产物为覆盖金刚石表面的黑色薄膜状物质,其拉曼光谱在2191cm-1处有强峰,归属于C≡C伸缩振动;同时,其俄歇电子谱的峰位与金刚石相比有5eV的位移,证实了卡宾碳的存在。在中子辐照条件下,金刚石向卡宾碳的转化可能是通过碳原子堆垛形式发生变化而实现的。     

Passivation effects of deuterium exposure on boron-doped CVD homoepitaxial diamond

The deuterium (hydrogen) passivation effect on acceptors in boron-doped CVD homoepitaxial diamond was studied by electrical (Hall-effect) and secondary ion mass spectroscopy (SIMS) measurements. Deuterium was incorporated into the samples using microwave (MW) deuterium plasma at 673 K for 2–24 h. We observed the progress of acceptor passivation with p-type conduction, which finally resulted in a highly resistive state.     

机械合金化的原理及在磁性材料研究中的应用

介绍了机械合金化的原理和描述机械合金化过程的理论模型。综述了机械合金化在磁性材料研究中的应用，并对目前研究中的存在的问题及发展前景进行了分析。     

机械合金化Fe50Ti50非晶的形成及球磨强度对它的影响

本文通过电子扫描和Ｘ衍射对机械合金人Ｆｅ５０Ｔｉ５０非晶粉末形成做了研究。研究发现：机械合金非晶形成可以大致地分为二个阶段－粉末的破碎阶段和非晶的形成阶段。另外，对球磨强度对非晶形成的影响进行了研究。结果表明：强度低时粉末需要较长的时间才能形成非晶，强度高时粉末形成非晶的时间大大缩短，但在随后的球磨中，粉末会重新晶化形成新相。     

球头碗球面加工组合机床设计

根据球面形成原理,利用铣刀和工件的两个圆运动,合成球头碗的不完整内球面。采用组合机床,结构简单,调整、维护方便,主轴弹性卡头便于工件装卸。对零件尺寸、形状和位置误差进行了分析。通过对铣刀和主轴电机的变频调速,找出最佳切削参数,实现了内球面的高效率高精度加工。     

螺纹钢牙筋长度不足的原因及解决办法

分析了影响螺纹钢牙筋长度的原因，根据铣床的工作原理，利用刀头夹持长度与凸轮工作轨面半径的几何关系，推导出计算各种不同规格螺纹钢牙筋的工艺参数，解决了螺纹钢牙筋长度不足之问题。     

The process window for diamond deposition from the vapor phase with sulfur in the C–H–O feed gas mixtures

Theoretical predictions using a modified radical species ternary diagram for C–H–O system indicate that addition of sulfur expands the C–H–O gas phase compositional window for diamond deposition. Sulfur addition to no-growth domain increases the carbon super-saturation by binding the oxygen and the addition of sulfur to the non-diamond domain reduces the heavy carbon super-saturation by decreasing C_nH_m species concentration in the gas phase. The overall effect of sulfur addition to gas phase mixtures is characterized as that of oxygen addition to the C–H system, i.e. expansion of the compositional window over which diamond can be deposited from the gas phase. In addition, the increasing sulfur concentration to diamond domain feed gases beyond 2000 ppm did not affect the steady state gas phase composition but the quality of diamond was reduced.     

A theory for the formation of tetrahedral amorphous carbon including deposition rate effects

A theoretical model is presented to describe the effect of ion beam bombardment rate on the formation of tetrahedral amorphous carbon (ta-C) films. The critical ion energy, E_c, corresponding to a 50% sp³ content in the films, is found to be dependent on both the effective thermal resistance and the ion beam bombardment rate. In the model, the ‘window’ width in the ion energy scale for the formation of ta-C material increases with decreasing deposition rate and with a reduction in the effective thermal resistance, until limited by lower and upper boundary thresholds. Experimental data are reproduced by the model. The plasmon energy, which correlates with sp³ fraction, is found experimentally of be higher for lower deposition rate and smaller effective thermal resistance. Data points for high sp³ content ta-C films deposited on silicon substrates at room temperature occupy a region in the ion energy-deposition rate (E-r) diagram similar to that predicated from the theory.