In2O3:Ga and In2O3:P-based one-electrode gas sensors: Comparative study

Gas sensing characteristics of one-electrode sensors based on the In₂O₃ ceramics doped by gallium and phosphorus have been discussed. In₂O₃-based ceramic was prepared by sol–gel technology. Ozone, CO, CH₄ and H₂ were used as tested gases. The doping concentration effect on the sensor parameters such as magnitude of response, operating temperature, response and recovery times, sensitivity to the air humidity, and selectivity have been analyzed. It was shown that In₂O₃ doping by Ga and P could be used for the sensor performance optimization. It was assumed that the appearance of the second phase (InPO₄ and Ga₂O₃) and the change of structural parameters, taking place during doping process, were the main factors controlling the change of operating characteristics in In₂O₃:P and In₂O₃:Ga-based sensors.     

Manganese ferrite-polyaniline hybrid materials: Electrical and magnetic properties

Magnetic MnFe₂O₄ nanopowders were synthesized by an original solvothermal method in the absence and in the presence of tetra-n-butylammonium bromide (TBAB) and Tween 80 (TW) as surfactants. Manganese ferrite/polyaniline (PANI) hybrid materials were synthesized by in situ polymerization of aniline on the surface of MnFe₂O₄ using ammonium persulfate as oxidant. The purpose of the study was to investigate the influence of the two surfactants on the properties of the MnFe₂O₄ powders and of their composites with PANI. The specific surface area, the cumulative surface area of pores and the cumulative volume of pores are influenced by the nature of surfactant in case of MnFe₂O₄ powders and are higher by comparison to those of the MnFe₂O₄/PANI hybrid materials. The values of saturation magnetization in case of MnFe₂O₄ powders are higher than those of the hybrid materials and are not influenced by the surfactant nature. These features revealed that MnFe₂O₄ powders can be efficiently used as adsorbents for the purification of wastewaters. The values of the electrical conductivity of the composites exhibit a significant increase in comparison to the MnFe₂O₄ powders and depend on the surfactant nature. The highest value of electrical conductivity was achieved by the composite obtained using Tween 80 as surfactant (σ_DC = 54.5·10^?5S?m^?1) which was close to that of PANI (σ_DC = 61.2·10^?5 S?m^?1). The fact that the magnetic and electric properties of the synthesized MnFe₂O₄/PANI composites can be changed by design, demonstrate the high potential of these materials to be used in magneto-electric applications.     

Influence of domain switching process on the electrical fatigue behavior of ferroelectrics

We report an experimental approach, designed based on the recent findings that domain switching in ferroelectric ceramics can be separated into three regimes during antiparallel electric field loading, to investigate the influence of domain switching process on the electrical fatigue behavior of ferroelectrics. Uniaxial compressive stress (−2 MPã -100 MPa) and thermal loading (20 °C–150 °C) were used to tune the domain switching process. Under the same loading condition, the bipolar electrical fatigue behavior of soft lead zirconate titanate ceramics was systematically characterized. The amplitude and frequency of the applied electric field are 2 kV/mm and 10 Hz, respectively. By analyzing the evolution of the domain switching process, combined with the measured polarization and strain response, as well as the cracks observed on the surface of the specimen, it is found that the fatigue of ferroelectric ceramics was mainly related to the domain switching process near the coercive electric field: the regime 2 defined in this paper. The underlying mechanism was further discussed by considering the interplay between the domain switching process with the main factors affecting the electrical fatigue of ferroelectrics, namely defect redistribution, charge carrier injection, and crack initiation.     

Fabrication and performances of high lithium-ion conducting solid electrolytes based on NASICON Li1.3Al0.3Ti1.7-xZrx(PO4)3 (0≤ x≤ 0.2)

Solid electrolytes are the key component in designing all-solid-state batteries. The Li_1.3Al_0.3Ti_1.7(PO₄)₃ (LATP) structure and its derivatives obtained by doping various elements at Ti and Al site acts as good solid electrolytes. However, there is still scope for enhancing the ionic conductivity using simple precursors and preparation methods. In this study, the Li superionic conductors Li_1.3Al_0.3Ti_1.7-xZr_x(PO₄)₃ (LATZP) with 0 ≤ x ≤ 0.2 have been successfully prepared by the solid-state reaction route. The structural, morphological, and ionic transport properties were analyzed using several experimental techniques including powder X-ray diffraction (XRD), scanning electron microscopy (SEM), and impedance spectroscopy (IS). The presence of two relaxation processes corresponding to grain and grain boundary was studied using various formalisms. We have observed that grain effects dominate at lower temperatures (<100 °C) while the grain boundary at higher temperatures (> 200 °C) on ionic conductivity. The relaxation mechanisms of grain and grain boundaries were investigated by the Summerfield scaling of AC conductivity. The highest total ionic conductivity of 2.48 × 10^-4 S/cm at 150 °C and 5.50 × 10^-3 S/cm at 250 °C was obtained for x = 0.1 in Li_1.3Al_0.3Ti_1.6Zr_0.1(PO₄)₃ sintered at 950 °C/6 h in the air. The ionic conductivity value was found to be higher than the ionic conductivity reported for LATP prepared via solid-state reaction mechanism using the same precursors and conditions.     

Sparsity-inspired image reconstruction for electrical capacitance tomography

We present a new image reconstruction method for Electrical Capacitance Tomography (ECT). ECT image reconstruction is generally ill-posed because the number of measurements is small whereas the image dimensions are large. Here, we present a sparsity-inspired approach to achieve better ECT image reconstruction from the small number of measurements. Our approach for ECT image reconstruction is based on Total Variation (TV) regularization. We apply an efficient Split-Bregman Iteration (SBI) approach to solve the problem. We also propose three metrics to evaluate image reconstruction performance, i.e., a joint metric of positive reconstruction rate (PRR) and false reconstruction rate (FRR), correlation coefficient, and a shape and location metric. The results on both synthetic and real data show that the proposed TV-SBI method can better preserve the edges of images and better resolve different objects within reconstructed images, as compared to a representative state-of-the-art ECT image reconstruction algorithm, Projected Landweber Iteration with Linear Back Projection initialization (LBP-PLI).     

Ga-doped IZO films obtained by magnetron sputtering as transparent conductors for visible and solar applications

C-axis textured thin films of gallium-doped indium zinc oxide (GIZO) with a 2% ratio of Ga/Zn, were obtained via RF-magnetron sputtering with high transparency and electrical conductivity. A Box-Behnken response surface design was used to evaluate the effects of the deposition parameters (In₂O₃ target power, deposition time, and substrate temperature) on the chemical composition, optical, electrical, and structural properties of the GIZO films. The optical constants and the electrical properties were obtained using optical models. The GIZO stoichiometry, and therefore the In/Zn atomic ratio, affected the crystallinity, crystalline parameters, band gap, and charge carrier mobility of the GIZO films. The charge carrier density was related to the change in the crystalline parameters of the hexagonal structure and the In/Zn atomic ratio. The best electrical conductivity values (1.75?×?10³ Ω^?1 cm^?1) were obtained for GIZO films with In/Zn ratio ≥?1. Several figures of merit (FOM) defined for the visible and solar regions were comparatively used to select the optimal In/Zn atomic ratio that provided the best balance between the conductivity and the transparency. The optimal In/Zn ratio was in a range of 0.85–0.90 for the GIZO films.     

Experimental study to assess the effect of carbon nanotube addition on the through-thickness electrical conductivity of CFRP laminates for aircraft applications

The present paper tests experimentally the through-thickness electrical conductivity of carbon fiber-reinforced polymer (CFRP) composites laminates for aircraft applications. Two types of samples were prepared: Type A samples with carbon nanotubes (CNTs) and Type B samples without CNTs. During the electrical experiments, electrical currents of several mA were injected through the specimens. Electrical resistance was monitored simultaneously in order to deduce the changes in the through-the-thickness electrical conductivity caused by the addition of CNTs. Improvement of electrical conduction by two orders of magnitude was achieved through the addition of 1 wt% carbon nanotubes as compared to classic CFRP without CNTs. For moisture saturated samples, the influence of moisture absorption on such measures was found to be negligible.     

Importance of finding the proper ratio of alkaline earth oxide in a lithium-bismuthate-phosphate glass in order to enhance the tailoring of structural and electrical properties

Structural features of the glass family xLi₂O- yMgO (4.8 Bi₂O₃ 47.6 P₂O₅) obtained by melt quenching technique were studied taking into account the density, FTIR and UV–vis spectra and also the electrical response observed by impedance spectroscopy. In this work it becomes clarified how the alkaline earth oxides stabilize the glassy matrix and also, the fundamental importance of determining the optimal proportion in order to obtain a flabby easily polarizable matrix to enhance the electrical behavior due to a boosted cation mobility. It is evidenced that when the glass composition becomes complex it is needed to take into account a larger number of structural parameters to understand, to predict or to design the resulting physical properties.     

Enhancement of optical and electrical properties of SILAR deposited ZnO thin films through fluorine doping and vacuum annealing for photovoltaic applications

Undoped and fluorine doped ZnO thin films were deposited onto glass substrates using successive ionic layer adsorption and reaction (SILAR) technique and then annealed at 350 °C in vacuum ambience. The F doping level was varied from 0 to 15 at% in steps of 5 at%. The XRD analysis showed that all the films are polycrystalline with hexagonal wurtzite structure and preferentially oriented along the (002) plane. Crystallite sizes were found to increase when 5 at% of F is doped and then decreased with further doping. It was seen from the SEM images that the doping causes remarkable changes in the surface morphology and the annealing treatment results in well-defined grains with an improvement in the grain size irrespective of doping level. All the films exhibit good transparency (>70%) after vacuum annealing. Electrical resistivity of the film was found to be minimum (1.32×10⁻³ Ω cm) when the fluorine doping level was 5 at%.     

Synthesis and characterization of poly (linoleic acid)-g-poly(methyl methacrylate) graft copolymer with applying in Au/PLiMMA/n-Si diode

Poly (linoleic acid)-g-poly(methyl methacrylate) (PLiMMA) graft copolymer was synthesized and characterized. PLiMMA graft copolymer was synthesized from polymeric linoleic acid peroxide (PLina) possessing peroxide groups in the main chain by free radical polymerization of methyl methacrylate. Later, PLiMMA was characterized by proton nuclear magnetic resonance (¹H NMR), gel permeation chromatography (GPC), thermal gravimetric analysis (TGA) and differential scanning calorimetry (DSC) techniques. Furthermore, Au/PLiMMA/n-Si diode was fabricated for the purpose of investigating PLiMMA׳s conformity in diodes. The main electrical characteristics of this diode were investigated using experimental current–voltage (I–V) measurements in dark and at room temperature. Obtained results, such as sufficiently high rectifying ratio of 4.5×10⁴, indicate that PLiMMA is a promising organic material for electronic device applications.