Microstructural and compositional aspects of ZnO-based varistor ceramics prepared by direct mixing of the constituent phases and high-energy milling

ZnO-based varistor samples were prepared by the direct mixing of the constituent phases (DMCP) and sintering at 1100 °C for 2 h. The influence of the starting powder mixture's composition – the amounts of the pre-reacted varistor compounds and their composition – and its preparation, either with or without mechano-chemical activation (MCA), on the microstructure, phase composition and electrical characteristics of the varistor samples was studied. It showed that MCA improved the density and microstructural homogeneity of the varistor samples. MCA strongly affected the grain growth: it enhanced the nucleation of inversion boundaries (IBs) in the ZnO grains and the IBs-induced grain-growth mechanism resulted in uniform grain growth and hence a microstructure with smaller ZnO grains and a narrower grain size distribution. The final phase composition of the samples prepared by the DMCP method mainly depended on the presence of varistor dopants that can prevent the formation of the pyrochlore phase, especially Cr₂O₃, while MCA can affect it mostly by providing a homogeneous distribution of those dopants. The DMCP varistor samples prepared with MCA had much better current–voltage characteristics than the samples of the same composition prepared from unactivated powders.     

Preparation of multi-compositional gas sensing films by combinatorial solution deposition

Various compositions of gas sensing films were prepared by the combinatorial deposition of SnO₂, ZnO, and WO₃ sol solutions and their gas sensing behaviors were investigated. The film composition could be manipulated conveniently via the alternate dropping of different oxide sol solutions. From the correlation between film compositions and gas sensitivities, the selective detection of C₂H₅OH and CH₃COCH₃ in the presence of CO, C₃H₈, H₂, and NO₂ could be attained. In addition, the discrimination between C₂H₅OH and CH₃COCH₃, which is a challenging issue due to their similar chemical nature, becomes possible. This research demonstrates the precise design of the sensor-material composition for the selective gas detection via the combinatorial approach.     

韶关电厂9#200MW机组DEH控制系统的改造

在对韶关电厂200MW机组DEH系统改造过程中，控制系统采用数字式电液控制系统(DEH)，汽机基本控制部分采用一对互为冗余数据处理单元(DPU)完成，并采用专用的硬件来实现超速控制和超速保护功能。汽机保护系统(ETS)采用独立的系统可编程控制器PLC来实现。     

Electrical characterization of homoepitaxial diamond p–n junction

Electrical properties of homoepitaxial diamond p–n⁺ junction of boron (B)-doped p-type layer and phosphorus-doped n-type layer on Ib (111) diamond single crystal have been characterized. Current–voltage characteristics show a clear rectifying property with rectification ratio of over 10⁵ at ± 10 V. From capacitance–voltage characteristics, it is found that a spatial distribution of space-charge density N_i of the p–n⁺ junction is not uniform and N_i at a middle region of the space-charge layer formed at zero bias voltage is higher than that of other region of the space-charge layer. This peculiar characteristic can be explained by superposition of two effects; one is the deep dopant effect due to B atoms in the p-type layer, which makes to reduce N_i at around the edge of the space-charge layer formed at zero bias voltage. The other is the compensation of B acceptors by impurity atoms diffusing during the p–n⁺ interface and incorporating during the growth of p-type layer, which makes to reduce N_i at the vicinity of the p–n⁺ interface.     

Passivation effects of deuterium exposure on boron-doped CVD homoepitaxial diamond

The deuterium (hydrogen) passivation effect on acceptors in boron-doped CVD homoepitaxial diamond was studied by electrical (Hall-effect) and secondary ion mass spectroscopy (SIMS) measurements. Deuterium was incorporated into the samples using microwave (MW) deuterium plasma at 673 K for 2–24 h. We observed the progress of acceptor passivation with p-type conduction, which finally resulted in a highly resistive state.     

Genetic synthesis of a fuzzy pulse discriminator in electrical discharge machining

In this paper, a sensor system, called a fuzzy pulse discriminator, is developed to classify various discharge pulses in electrical discharge machining (EDM). The fuzzy rules of the pulse discriminator are obtained based on the features of the gap voltage and gap current between the tool workpiece. The membership functions of the fuzzy pulse discriminator are automatically synthesized by using genetic algorithms. The effectiveness of this approach is verified under different cutting parameters.     

Electrical/electronic effects of titanium and iron impurities in EFG and FZ solar cell silicon: SPV/EBIC analysis

In this paper results on surface photovoltage (SPV) and electron beam induced conductivity (EBIC) studies of edge-defined film-fed growth (EFG) and floating zone (FZ) silicon solar cell materials (both p-type) are presented. A systematic comparison based on minority carrier diffusion length and carrier recombination is made between: (i) samples contaminated with Ti and/or Fe, (ii) samples gettered by phosphorous diffusion, and (iii) as-received samples. Deep level transient spectroscopy (DLTS) measurements, together with the iron-boron (FeB) pairing kinetics [1] have successfully been used to detect the presence of Fe in the samples. Even though this process is effective in revealing Fe impurities in p-type FZ silicon it is evidently not suitable for Fe identification in p-type EFG silicon. Ti, like Fe, is found to be a prominent lifetime-limiting metallic impurity in both EFG and FZ silicon. Phosphorous diffusion is proven to be an effective external gettering technique for fast-diffusing impurities such as Fe, but not for Ti.     

基于IGBT的PWM大功率直流伺服驱动

本文介绍ＩＧＢＴ、ＥＸＢ８４１和ＬＥＭ模块在大功率ＰＷＭ直流伺服驱动系统中的应用和系统抗干扰设计。使用效果表明，基于ＩＧＢＴ的设计，可提高大功率直流伺服系统的可靠性和性能、减小体积、降低成本。     

Additives distribution and electrical properties in zinc oxide varistor prepared by a wet chemical method

Cobalt-, praseodymium-added zinc oxide varistor was prepared through a wet chemical method followed by sintering with or without calcination. Changes in grain size, compact density, additives distribution, and voltagecurrent/ capacitance-voltage relations were investigated for the characterization of the samples sintered at temperatures from 1473 to 1573 K without calcination or with calcination at 773 K for 2 h. The electrical properties were compared with nhose of samples prepared by two types of ball mill methods. The wet chemical method provided almost the same additives-distribution profile and less impurities in comparison with the ball grinding method carried out for 10–100 h. The donor concentration and the potential-barrier height for the samples were evaluated by Double Schottky Barrier Model. Addition of small amount of both cobalt and praseodymium in preparation by the wet chemical method was effective for a better nonlinearity relation between voltage and current, which has potential for a smaller sized varistor.     

Preparation and characterization of organic-inorganic poly(ethylene glycol)/WS2 nanocomposite

Layered nanocomposite PEG/WS₂, intercalating oligomeric poly(ethylene glycol) (PEG6000) into the tungsten disulfide host galleries, was synthesized using the exfoliation-adsorption technique. X-ray diffraction revealed that the intercalated oligomer within the host galleries is in a double-layer arrangement with an interlayer expansion of about 8.8 Å. The optimum conditions were explored to prepare the single-phase product with a composition of Li_0.12(PEG)_1.51WS₂. Thermal analyses suggested that the resulting material shows good thermal stability, with the decomposition of the interacted oligomeric chains within the disulfide galleries occurring at around 258 °C. Despite high conductivity of the host material, those of the PEG/WS₂ nanocomposite were found to be high in the order of 1 × 10⁻² S cm⁻¹ at ambient temperature, resulted from the host guest-host charge transfers.