Electrical Resistance Measurement of Glass Transition and Crystallization Characteristics of Zr—Al—Cu—Ni Metallic Glasses

In this paper,glass transition and thermal stability of the Zr-Al-Cu-Ni metallic glasses were investigated by using electrical resistance measurement(ERM),DSC and X-ray diffraction techniques.The experimental results show that the ERM is capable of detecting the glass transition of the amorphous alloys and can help to distinguish the crystallization products of the Zr-Al-Cu-Ni metallic glasses owing to the difference of the electrical resistivity between the precipitation phases.     

载人航天高可靠伺服技术

回顾了载人航天高可靠伺服技术的研制道路，介绍了用于载人航天火箭推力矢量控制中的新型三余度伺服机构的技术特点，对载人航天伺服技术的未来发展进行了分析和展望。     

新型雷达干扰材料--导电聚苯胺

导电聚苯胺(PAN)是一种具有潜在应用价值的新型射频与微波吸收剂。在聚苯胺中添加各种导电填料如碳黑、石墨、金属粉或通过化学掺杂，可使电导率得到显著提高，而且比重小、易加工成型。本文简述其合成方法，用XRD、FTIR对其结构进行表征，初步测试了该材料对毫米波雷达的衰减效果，测试结果表明导电聚苯胺在8mm波波段具有衰减性。     

Structural and electrical properties of brush plated ZnTe films

Zinc telluride thin films were deposited by the brush plating technique at a potential of −0.90 V (SCE) on conducting glass and titanium substrates at different temperatures in the range 30–90 °C. The films were polycrystalline in nature with peaks corresponding to the cubic phase. Direct band gap of 2.30 eV was observed. XPS studiers indicated the formation of ZnTe. Depth profiling studies indicated a uniform distribution of Zn and Te throughout the entire thickness. EDAX measurements were made on the films and it was found that there was a slight excess of Te. The carrier concentration was found to vary from 10¹⁴–10¹⁵ cm⁻³ with increase of substrate temperature. The mobility was found to vary from 5 to 60 cm² V⁻¹ s⁻¹.     

Structure evolution of conductive polymer composites revealed by solvent vapor induced time-dependent percolation

The authors of this paper synthesized a series of amphiphilic triblock copolymers of polystyrene-b-poly(ethylene glycol)-b-polystyrene (PS-PEG-PS) having different PEG/PS ratios with nearly identical molecular weights of the entire copolymers. The interfacial interactions in the composites consisting of carbon black and the copolymers can thus be tailored. When these conducting composites are exposed to certain solvent vapors, their electrical resistances greatly increase, showing the gas sensitivity. The present work indicated that this switching behavior is controlled by the structural relaxation of the composites because matrix swelling acts as the main mechanism. The response time has been correlated with absolute temperature by Arrhenius equation, and the estimated activation energy reflects mobility of the fillers involved in the solvent induced expansion of the surrounding polymer. Therefore, by using the gas sensibility of the conductive composites, the structure evolution of the composite materials in solid state and the effect of filler/matrix interfacial interaction on the relaxation property of the matrix polymer has been inspected. It was found that lower activation energy represents stronger interfacial interaction in case good solvent of the matrix was used for the test.     

Phase composition and properties of solid solutions of GdFeO3–GdInO3 bulks

Solid solutions of the GdFeO₃–GdInO₃ system were prepared at 1550 °C by ceramic powder processing. The formulated composition was Gd(Fe_1−xIn_x)O₃ (GFI) with the indium contents at x = 0, 0.25, 0.5, 0.75, and 1.0. A stable phase of Gd(Fe_1/3In_2/3)O₃ in our system was identified by X-ray diffraction and phase composition analysis. Multi-phase morphologies were observed for GFI bulks with x = 0.5 and 0.75. Dielectric and electrical properties of the GFI bulks were investigated. The addition of 25% In³⁺ in GdFeO₃ had an obvious enhancement in polarization and led to an elevated resonance frequency. Dielectric properties of GFI bulks except GdInO₃ were strongly dependent upon the test frequency, which corresponded to the response of polarization mechanism. GdInO₃ displayed as a stable dielectric, which was frequency- and temperature-insensitive. GdInO₃ was thermally activated and became leaky until above 600 °C.     

Material removal and surface damage in EDM of Ti3SiC2 ceramic

Material removal and surface damage of Ti₃SiC₂ ceramic during electrical discharge machining (EDM) were investigated. Melting and decomposition were found to be the main material removal mechanisms during the machining process. Material removal rate was enhanced acceleratively with increasing discharge current, i_e, working voltage, u_i, but increased deceleratively with pulse duration, t_e. Microcracks in the surface and loose grains in the subsurface resulted from thermal shock were confirmed, and the surface damage in Ti₃SiC₂ ceramic led to a degradation of both strength and reliability.     

国内外厚煤层大功率电牵引采煤机机电一体化新技术

介绍国内外大功率厚煤层电牵引采煤机的机电一体化新技术,包括总体技术、交流变频电牵引技术、工况检测、故障诊断技术、自动调高技术、远程通讯和集中控制技术。     

Comparative study of the electrical properties of diamond films grown by microwave plasma assisted and hot-filament chemical vapor deposition

Schottky diodes were built on different polycrystalline diamond films grown by Microwave Plasma and Hot Filament Chemical Vapor Deposition and their electrical properties were studied. The barrier height increased with the diamond film quality and the corresponding ideality factor decreased. Even though the lower-quality HFCVD film displayed poor rectifying properties, it was found to be much less sensitive to variations in the operating conditions (air vs. vacuum). The activation energies of the films depend on morphological parameters, as preferable grain size or orientation. The bulk conduction also depends on the quality of the deposited films, changing from ohmic to trap-free or shallow trap SCLC and SCLC with an exponential distribution of traps. The hypothesis of using the electrical measurements as an indicator for film quality has been discussed.     

Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.