Oligo(ethylene oxide) side‐chain steric screening effects on conductimetric properties of grafted poly(4‐vinylpyridinium) salts in aqueous solutions

A set of poly[N‐oligo(ethylene oxide)yl 4‐vinylpyridinium tosylate] (P4VOEOOTs) has been prepared by spontaneous polymerization of 4‐vinylpyridine. This method gives a grafted polyelectrolyte having a positive charge on every backbone pyridinic moiety. The P4VP15Ts, P4VP164Ts, P4VP350Ts and P4VP750Ts aqueous solution conductivities were determined in the concentration range from 6 × 10^?4 to 10^?2 M at 25 °C. The variation of the conductivity versus concentration of the investigated system exhibits typical polyelectrolyte behaviour. The polyelectrolyte mobility was found to be dependent on the oligo(ethylene oxide) (OEO) side‐chain length. Manning's rod‐like model fails to describe these results. A simple steric effect is proposed to explain the influence of the OEO length. Copyright © 2003 Society of Chemical Industry     

Nd3+:Y0.5Gd0.5VO4晶体生长和基本特性

Nd^3 :Y0.5Gd0.5VO4晶体作为一种新的激光材料，可以用中频感应加热提拉法生长。X射线粉末衍射分析表明它的结构与Nd^3 :YVO4晶体结构相同，它的晶格常数介于YVO4和NdVO4晶格常数之间。用ICP光谱法测定晶体中Nd^3 含量为0．8at％，分凝系数为0．8，与Nd^3 :GdVO4晶体中Nd^3 的分凝系数0．78相当；用称重法测定其密度为5．00g／cm^3；用稳态纵向热流法测出其室温热导率为12．5W／mK。实验表明Nd^3 :Y0.5Gd0.5VO4晶体有希望作为高功率ID泵浦激光晶体材料。     

高导电性原油电脱盐工艺研究

南阳原油中金属含量较高,掺有部分3次采油采出原油,加工时易造成电脱盐装置原油乳化,电导率高,脱盐难度较大。装置投产十几年来脱后含盐一直不合格,经过改造仍然超标,常压塔顶腐蚀严重。为此,对原油进行了电脱盐工艺条件及破乳剂研究,研制出了高效电脱盐设备和生物复合脱盐剂及降电流剂,采用平流弓形电极进行改造,解决了该原油的电脱盐问题,使脱后含盐达到3 mg/L。     

长距离管输对3号喷气燃料导电性能和清洁性能的影响

分析了长距离管输后3号喷气燃料电导率严重衰减的原因和补加抗静电剂后对3号喷气燃料电导率和水反应指标的影响。对比了成品油长距离管输和喷气燃料馏分长距离管输对3号喷气燃料电导率和水反应指标的影响，并对比了两种管输方式的优缺点，提出对3号喷气燃料的管输建议。3号喷气燃料的长距离管输，优先采用喷气燃料馏分油管输在末端加注抗静电剂的方式；需兼顾汽运时，宜采用成品油管输并在末端根据电导率衰减情况，最小量补加抗静电剂的方式，以获得较高的成功率和较好的经济效益。     

Improving narrow bandgap a-SiGe:H alloys grown by hot-wire chemical vapor deposition

We have improved the electronic properties of narrow-bandgap (Tauc gap below 1.5 eV) amorphous-silicon germanium alloys (a-SiGe:H) grown by hot-wire chemical vapor deposition (HWCVD) by lowering the substrate temperature and deposition rate. Prior to this work, we were unable to grow a-SiGe:H alloys with bandgaps below 1.5 eV that had photo-to-dark conductivity ratios comparable with our plasma-enhanced CVD (PECVD) grown materials [B.P. Nelson et al., Mater. Res. Soc. Symp. 507 (1998) 447]. Decreasing the filament diameter from our standard configuration of 0.5 mm to 0.38 or 0.25 mm provides first big improvements in the photoresponse of these alloys. Lowering the substrate temperature from our previous optimal temperatures (T_sub starting at 435 °C) to at 250 °C provides additional photo-to-dark conductivity ratio increasing by two orders of magnitude for growth conditions containing 20–30% GeH₄ in the gas phase (relative to the total GeH₄+SiH₄ flow).     

非稳定井流模型的半解析解

为了提高非稳定渗流计算的计算精度 ,通过数学分析得到了水位传导系数随时间变化时 ,一类非稳定渗流井流模型的半解析解 ,并进行了计算比较     

掺杂聚苯胺导电膜的制备及对核设施表面铀的去污

制备了掺杂导电聚苯胺可剥离膜，首次采用涂膜、电解联用去污方法，进行涂膜电解去除渗透到核设施金属材料内部形成氧化物的铀。在膜中，聚苯胺、盐酸、EDTA-2Na含量各为4％、0．5％～1%、1％；电解电压2．3V、电解时间25min～30min时，其去污率可达99％，优于其它的方法。     

Thermodynamic and Transport Properties of Liquid HFC-227ea

The thermal conductivity and heat capacity of liquid 1,1,1,2,3,3,3-hepta-fluoropropane (HFC-227ea) have been studied by a high-frequency thermal-wave method over the temperature range of 294 to 345 K at pressures up to 2.8 MPa. The purity of the samples used throughout the measurements is 99.99 mol%. The experimental uncertainties of the thermal conductivity and heat capacity measurements were estimated to be within ±1.5 and ±2%, respectively. The thermal conductivity of HFC-227ea in the liquid phase decreases as temperature increases, while the pressure has an opposite effect.     

中国未来电力需求与核能

本文介绍了我国未来电力需求和能源结构，阐述了核能是我国满足经济发达地区电力需求的合理选择，并提出了我国“九五”核电计划和中期目标，以及发展核电中面临的问题和基本对策。     

Electrical and optical properties of semi-insulating polycrystalline silicon thin films: the role of microstructure and doping

We have investigated the relationship between microstructure and electrical conductivity in semi-insulating polycrystalline silicon (SIPOS) with oxygen concentrations in the 2–35 at.% range and the effect of doping with boron, phosphorus, arsenic and erbium by ion implantation. SIPOS thin films are mixtures of silicon and silicon oxide phases. The chemical and morphological evolution of these phases upon annealing is emphasized. Electrical conductivity measurements are interpreted in terms of a physical model containing few free parameters related to the material microstructure. A direct extension of this model explains also the conductivity increase in SIPOS doped with elements of the third or the fifth group. In the last part of the paper, data of electroluminescence at 1.54 μm in Er-implanted SIPOS due to intra-4f transitions of the Er³⁺ ion are shown and discussed.