泵浦用大功率半导体激光器研制与应用发展状况

详尽地介绍了当前可以使用半导体泵浦的固体激光器泵浦要求，相应的半导体泵浦源的发展状况，存在的问题，最后介绍了列阵和耦合两种提高半导体泵浦源功率，改善其光束质量的方法。     

Thermodynamic modeling of the Au-In-Sb ternary system

The phase diagram of the Au-In-Sb ternary system is of importance in predicting the interface reaction between In-based solders and the Au substrate. Using the calculated phase diagram method and based on experimental data of thermodynamic properties and phase boundaries, the Au-Sb binary system was assessed, and the In-Sb binary system was revised. On the basis of the constituent binary systems, Au-Sb, In-Sb, and Au-In, the Au-In-Sb ternary system was modeled. Several isothermal and vertical sections were calculated, among which the one at 500 K reproduces the experimental diagram well.     

90nm工艺及其相关技术

ITRS2001规划2004年实现90nm工艺,英特尔、AMD等世界顶级半导体公司将于2003年采用90nm工艺量产微处理器和逻辑器件。这样使ITRS2001整整提前了一年。90nm工艺包括193nm光刻技术、高k绝缘材料、高速多层铜互连技术、低k绝缘材料、应变硅技术和电压隔离技术等新技术。193nm光刻技术是实现90nm工艺达量产的最关键技术,为此,必须采用193nmArFstepper(准分子激光扫描分步投影光刻机)。讨论了90nm工艺达量产的难点,如掩模版成本较高、成品率较低和应用面暂时不宽等。     

高速补充信道对cdma2000-1x前向链路功率分配的影响

分析了cdma2000-1x系统的前向信道发射功率分配。通过仿真试验及理论推导，给出了导频信道和业务信道信号质量之间的相互依赖关系并绘出导频信号和业务信道之间的相关性曲线：根据这种相关性曲线，从而发现使总发射功率最小的最佳导频功率；最后提出并分析了高速补充信道对cdma2000-1x前向链路功率分配的影响。     

数字控制通讯电源高压防护研究

介绍了一种数字控制通讯电源高压防护电路及其控制方法。数字信号控制器通过检测交流输入电压和PFC输出电压状况做出智能判断,控制高压防护电路中主继电器和辅助继电器的断开和吸合状态,从而对实现通讯电源快速有效的高压防护,提高了通信电源的可靠性。     

IDT70261在DSP高速实时通信中的应用

介绍了IDT70261的结构特点和基本功能，详细阐述了IDT70261的忙仲裁逻辑、双边中断逻辑和标识器逻辑，给出了一种基于IDT70261的TMS320LF240X和TMS320C54X之间高速实时通信接口设计以及软件实现方案。     

S Zorb装置高负荷运行的措施及效果

中国石油化工股份有限公司广州分公司1.50 Mt/a S Zorb装置自2010年1月10日开工投产以来,出现了反应器过滤器压差高、吸附剂转剂不畅、吸附剂活性下降等影响装置长周期高负荷运行的主要问题,通过使用ME7101高通量滤芯、改造下料流程、提高吸附剂活性等手段,将装置运行周期从过去最高的21.5个月延长到目前的30个月并仍维持正常生产,且负荷最高达110%,2016年每月加工量较2015年增加10~30 kt。     

The microstructure,mechanical stress,texture, and electromigration behavior of Al-Pd alloys

As the minimum feature size of interconnect lines decreases below 0.5 urn, the need to control the line microstructure becomes increasingly important. The alloy content, deposition process, fabrication method, and thermal history all determine the microstructure of an interconnect, which, in turn, affects its performance and reliability. The motivation for this work was to characterize the microstructure of various sputtered Al-Pd alloys (Al-0.3wt.%Pd, Al-2Cu-0.3Pd, and Al-0.3Nb-0.3Pd) vs sputtered Al-Cu control samples (Al-0.5Cu and Al-2Cu) and to assess the role of grain size, mechanical stress, and crystallographic texture on the electromigration behavior of submicrometer wide lines. The grain size, mechanical stress, and texture of blanket films were measured as a function of annealing. The as-deposited film stress was tensile and followed a similar stress history on heating for all of the films; on cooling, however, significant differences were observed between the Al-Pd and Al-Cu films in the shape of their stress-temperature-curves. A strong (111) crystallographic texture was typically found for Al-Cu films deposited on SiO₂. A stronger (111) texture resulted when Al-Cu was deposited on 25 nm titanium. Al-0.3Pd films, however, exhibited either a weak (111) or (220) texture when deposited on SiO₂, which reverted to a strong (111) texture when deposited on 25 nm titanium. The electromigration lifetimes of passivated, ≈0.7 μm wide lines at 250°C and 2.5 × 10⁶ A/cm² for both single and multi-level samples (separated with W studs) are reported. The electromigration behavior of Al-0.3Pd was found to be less dependent on film microstructure than on the annealing atmosphere used, i.e. forming gas (90% N₂-10%H₂) annealed Al-0.3Pd films were superior to all of the alloys investigated, while annealing in only N₂ resulted in poor lifetimes.     

光源场熵的计算与性质研究

本文利用Karhunen—Loeve展开,在光源空域内对光源场互谱密度进行量子谐振子模分解,发展了一种计算光源场熵的新方法,并精确计算了高斯Schell模光源场的熵,讨论了光源场熵与光源全相干度,光源场模数的关系。     

高平均功率板条激光器非稳谐振腔的研究

从高平均功率板条激光器的特性出发.讨论了非轴对称非稳谐振腔的结构及其主要特点,从理论与实验两方面得出有关结论,最后给出理想的实验结果.