Fabrication of GaN films through reactive reconstruction of magnetron sputtered ZnO/Ga_2O_3

1　INTRODUCTIONGallium nitride (GaN) is one of the most po tential semiconductors. GaN has a direct energyband gap of 3.4 eV at room temperature and highexternal photoluminescence quantum efficiency, aswell as a high excitonic binding energy of20 meV[1]. It is an ideal material for fabrication ofultraviolet(UV)/blue/green light emitting diodes(LEDs), laser diodes(LDs), UV detectors and de vices operating in high temperature, high frequen cy and high power co…     

Magnetization Reversal by Electrical Spin Injection in Ferromagnetic (Ga,Mn)As-Based Magnetic Tunnel Junctions

We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is asymmetric with respect to the current direction is found with the excitation current of 10⁶ A/cm². Contributions of both unpolarized and spin-polarized components are examined, and we conclude that the partial magnetization reversal occurs in the (Ga,Mn)As layer having smaller magnetization with the spin-polarized tunneling current of 10⁵ A/cm².     

一类萤光酮试剂的析相体系研究4──邻氯苯基萤光酮析相光度法测定矿石中痕量镓

研究了镓－邻氯苯基萤光酮－ＴｒｉｔｏｎＸ－１００析相显色体系，建立了测定镓的析相光度法。在ｐＨ７．０磷酸二氢钾－磷酸氢二钠缓冲介质中，镓－邻氯苯基萤光酮－ＴｒｉｔｏｎＸ－１００胶束溶液在９５℃加热１ｈ，配合物即被ＴｒｉｔｏｎＸ－１００相完全富集．最大吸收峰为５７５ｎｍ，表观摩尔吸光系数为１．０５×１０５Ｌ·ｍｏＬ－１·ｃｍ－１，镓含量０～８μｇ／５ｍＬ服从比耳定律，采用Ｐ３５０萃取树脂分离，应用于矿石中微量镓测定，结果满意。     

从烟化炉渣中回收镓的研究概况

韶关冶炼厂每年产鼓风(烟化)炉水淬渣15万t，其中含Ga30—40t，铁4万t左右，且历年堆放水淬渣近200万t，含Ga达400～500t，以现价计，高达十数亿人民币。韶冶开发部及其它科研院所的科研工作者对韶冶镓回收做了大量的工作。主要以以下四种方法为主：高温氯化挥发法、全湿法流程回收镓、碱熔-浸出法、还原熔炼-电解法等。其中以还原熔炼-电解法的各项指标较为理想，并通过工业试验证明该方案是可行的。     

Enthalpies of mixing of liquid Ag–Ga,Cu–Ga and Ag–Cu–Ga alloys

Using MHTC 96 Setaram high temperature drop calorimeter, partial and integral enthalpies of mixing of liquid alloys were determined in the Ag–Ga, Cu–Ga and in the ternary Ag–Cu–Ga system. The ternary alloys were investigated along two cross-sections at two different temperatures: 1128 K and 1273 K, respectively. Experimental data were used to find ternary interaction parameters by applying the Redlich–Kister–Muggianu model for substitutional solutions, and a full set of parameters describing the concentration dependence of the enthalpy of mixing was derived. The experimental data indicate that the heat of mixing in this system is slightly temperature dependent, at least in the measured temperature range.     

Microstructure and electrical conductivity of La0.9Sr0.1 Ga0.8Mg0.2O2.85-Ce0.8Gd0.2O1.9 composite electrolytes for SOFCs

(100-x) wt.% La_0.9Sr_0.1 Ga_0.8Mg_0.2O_2.85 - x wt.% Ce_0.8Gd_0.2O_1.9 (x = 0, 5, 10, 20) electrolytes were prepared by solid-state reaction. The composition, microstructure, and electrical conductivity of the samples were investigated. At 300 ~ 600°C, the pure La_0.9Sr_0.1 Ga_0.8Mg_0.2O_2.85 electrolyte has a higher conductivity compared to the composite electrolytes, but at 650 ~ 800°C the 95 wt.% La_0.9Sr_0.1 Ga_0.8Mg_0.2O_2.85 - 5 wt.% Ce_0.8Gd_0.2O_1.9 composite electrolyte presents the highest conductivity, reaching 0.035 S cm⁻¹ at 800°C. The cell performances based on La_0.9Sr_0.1 Ga_0.8Mg_0.2O_2.85-Ce_0.8Gd_0.2O_1.9 electrolytes were measured using Sr₂CoMoO₆-La_0.9Sr_0.1 Ga_0.8Mg_0.2O_2.85 as anode and Sr₂Co_0.9Mn_0.1NbO₆ -La_0.9Sr_0.1 Ga_0.8Mg_0.2O_2.85 as cathode, respectively. At 800°C, the measured open-circuit voltages are higher than 1.08 V, and the maximum power density and current density of the fuel cell prepared with 95 wt.% La_0.9Sr_0.1 Ga_0.8Mg_0.2O_2.85 - 5 wt.% Ce_0.8Gd_0.2O_1.9 electrolyte reach 192 mW cm⁻² and 720 mA cm⁻², respectively.     

Structural,elastic, phononic,optical and electronic properties investigation of two-dimensional XIS (X=Al,Ga, In) for photocatalytic water splitting

Two-dimensional (2D) materials have been widely developed due to their attractive properties. Here, by using density functional theory (DFT) calculations, for the first time, we explore potential applications of the novel XIS (X = Al, Ga, In) monolayer 2D materials on photocatalytic water splitting. A series of simulations were carried out to predict and study the structural, elastic, phononic, optical and electronic properties of 2D XIS materials. The results show that GaIS and InIS demonstrate low thermal conductivity. For optical properties, AlIS shows strong light absorption coefficients and refractive index only under ultraviolet (UV) light, while GaIS and InIS show stronger performance under both visible light and UV light with the band edge positions spanned the redox potential of water. The reasonable band positions and bandgaps make them promising photocatalysts for water splitting. This work reveals the potential applications of monolayer 2D XIS in thermal, electronic, and photocatalytic water splitting.     

金属正电子核素~(64)Cu,~(68)Ga,~(86)Y和~(89)Zr的PET标记药物研究进展

~(64)Cu,~(68)Ga,~(86)Y和~(89)Zr具备不同的半衰期和特殊生物体内性质,丰富了PET药物的多样性,为疾病的诊断和治疗提供了新的契机。近年来,金属正电子核素~(64)Cu,~(68)Ga,~(86)Y和~(89)Zr标记的药物在正电子发射计算机断层显像(PET)诊断中的应用越来越多,~(64)Cu在乏氧显像中发挥重要作用,~(68)Ga在靶向神经内分泌(NET)类肿瘤的诊断药物领域发展迅速,~(86)Y,~(89)Zr有望在免疫PET和放射免疫治疗领域发挥作用。本文主要综述金属正电子核素~(64)Cu,~(68)Ga,~(86)Y,~(89)Zr的生产与纯化,溶液配位化学以及应用方面的研究进展。     

Effect of enhanced interfacial reaction on the microstructure,phase transformation and mechanical property of Ni–Mn–Ga particles/Mg composites

This study investigated the microstructure, phase transformation and mechanical property of Ni–Mn–Ga particles/Mg composites with a strong interfacial reaction between the particles and the matrix. The strong interfacial reaction was related to the large surface area and energy per unit volume of the flaky shape Ni–Mn–Ga particles that favors the reaction between the particles and matrix. The martensitic transformation behavior was largely weakened due to the interfacial reactions and thus the reduced volume fraction of Ni–Mn–Ga particles. The composites exhibited a much improved compressive strength and ductility in comparison with that of the Ni–Mn–Ga alloy. The compressive plasticity of the composites was decreased when the Ni–Mn–Ga particle content exceeded 40 wt%. In comparison with the Mg-composites with large size Ni–Mn–Ga particles, the composites with small size particles would have a much stronger interfacial reactions, which was detrimental to the phase transformation and mechanical ductility of the composites. The investigation results in this article could provide a reference for the design and preparation of the particles reinforced metal matrix functional composites.     

Gallium gradients in Cu(In,Ga)Se2 thin‐film solar cells

The gallium gradient in Cu(In,Ga)Se₂ (CIGS) layers, which forms during the two industrially relevant deposition routes, the sequential and co‐evaporation processes, plays a key role in the device performance of CIGS thin‐film modules. In this contribution, we present a comprehensive study on the formation, nature, and consequences of gallium gradients in CIGS solar cells. The formation of gallium gradients is analyzed in real time during a rapid selenization process by in situ X‐ray measurements. In addition, the gallium grading of a CIGS layer grown with an in‐line co‐evaporation process is analyzed by means of depth profiling with mass spectrometry. This gallium gradient of a real solar cell served as input data for device simulations. Depth‐dependent occurrence of lateral inhomogeneities on the µm scale in CIGS deposited by the co‐evaporation process was investigated by highly spatially resolved luminescence measurements on etched CIGS samples, which revealed a dependence of the optical bandgap, the quasi‐Fermi level splitting, transition levels, and the vertical gallium gradient. Transmission electron microscopy analyses of CIGS cross‐sections point to a difference in gallium content in the near surface region of neighboring grains. Migration barriers for a copper‐vacancy‐mediated indium and gallium diffusion in CuInSe₂ and CuGaSe₂ were calculated using density functional theory. The migration barrier for the In_Cu antisite in CuGaSe₂ is significantly lower compared with the Ga_Cu antisite in CuInSe₂, which is in accordance with the experimentally observed Ga gradients in CIGS layers grown by co‐evaporation and selenization processes. Copyright © 2014 John Wiley & Sons, Ltd.