络合剂对化学水浴沉积 ZnS薄膜的影响

采用不同络合剂化学水浴沉积ZnS薄膜,应用台阶仪、SEM、XRD、波谱仪等手段测定了ZnS薄膜的厚度、表面、物相结构及透过率等.结果表明,氨水体系沉积薄膜速度明显慢于另外两种体系,沉积的ZnS薄膜都为立方结构.柠檬酸钠体系沉积的ZnS 薄膜结晶和透过率最佳,但薄膜表面缺陷较多;氨水-联氨体系沉积的ZnS薄膜表面质量最佳,结晶和透过率也较好;氨水体系沉积的ZnS薄膜质量较差.用3种体系沉积的ZnS薄膜用于制备铜铟镓硒Cu(In,Ga)Se2太阳电池,氨水和氨水-联氨体系沉积的ZnS薄膜制备的电池转换效率明显高于柠檬酸钠体系沉积的ZnS制备的太阳电池.     

A review of ion beam induced charge microscopy

Since its development in the early 1990’s, ion beam induced charge (IBIC) microscopy has found widespread applications in many microprobe laboratories for the analysis of microelectronic devices, dislocations, semiconductor radiation detectors, semi-insulating materials, high power transistors, charge-coupled arrays, solar cells, light emitting diodes, and in conjunction with Single Event Upset imaging. Several modalities of the techniques have been developed, such as lateral IBIC and time-resolved IBIC. The theoretical model of IBIC generation and collection has developed from a one-dimensional model of charge drift and diffusion to a detailed model of the motion of ion charge carriers in semiconductors and insulators. This paper reviews the current state-of-the-art of IBIC theory and applications.     

Effects of Ga and Sn on the electrochemical behavior of Mg–6Al–1Zn as anode materials

The microstructure and electrochemical behavior of Mg–6Al–1Zn, Mg–6Al–1Zn–1Ga, Mg–6Al–1Zn–1Sn, and Mg–6Al–1Zn–0.5Sn–0.5Ga as anode materials in a 3.5 wt% NaCl solution are compared systematically. The results show that Sn alloying refines the second-phases of Mg–6Zn–1Al by promoting tiny granular Mg₁₇Al₁₂ phases containing Sn, and inspires their disperse distribution. However, the Ga results in the formation of semicontinuous reticular Ga containing Mg₁₇Al₁₂ phases. The comparison of discharge tests indicates that Mg–6Al–1Zn–1Sn has the highest discharge activity, and Mg–6Al–1Zn–1Ga displays the largest hydrogen evolution corrosion resistance in 3.5 wt% NaCl solution at 298 K. The synergy of Ga and Sn can shorten discharge activation time and promote low discharge potential. In addition, the utilization efficiencies of the alloys decrease as follows: Mg–6Al–1Zn–1Ga > Mg–6Al–1Zn–0.5Sn–0.5Ga > Mg–6Al–1Zn–1Sn > Mg–6Zn–1Al. This study illustrates that the Mg–6Al–1Zn–0.5Sn–0.5Ga alloy has acceptable utilization efficiency and desirable electrochemical activity, which implies that doping Ga and Sn obtains a balance between discharge activity and utilization efficiencies.     

Si基氨化ZnO／Ga2O3薄膜制备GaN纳米线

利用射频磁控溅射法在Si(111)衬底上溅射ZnO中间层和Ga2O3薄膜，然后在管式炉中常压下通氨气对ZnO/Ga2O3薄膜进行氨化，高温下ZnO层在氨气气氛中挥发，而Ga2O3薄膜和氨气反应合成出GaN纳米线．X射线衍射测量结果表明利用该方法制备的GaN纳米线具有沿c轴方向择优生长的六角纤锌矿结构．利用扫描电子显微镜、透射电子显微镜、傅里叶红外透射谱、能量弥散谱及选区电子衍射观测并分析了样品的形貌、成分和晶格结构．研究发现ZnO层的挥发有利于Ga2O3和NH3反应合成GaN纳米线．     

Greatly improved NIR shielding performance of CuS nanocrystals by gallium doping for energy efficient window

In this work, gallium doped copper sulfide (Ga-doped CuS) nanocrystals were prepared using a solvothermal method. The effects of Ga doping on the crystal structures, chemical composition, morphology, optical properties and thermal performance of copper sulfide (CuS) were investigated. The Ga-doped CuS nanocrystals had a hexagonal structure comparable to that of pure CuS. The Cu⁺/Cu²⁺ ratio first decreased and then increased with increasing Ga³⁺ doping. Both CuS and Ga-doped CuS exhibited nanoplate and nanorod morphologies. The visible transmittance of the Ga-doped CuS films was in the range of 61–77.1%. Importantly, the near-infrared (NIR) shielding performance of the films can be tuned by adjusting the concentration of the Ga dopant. The NIR shielding value of the optimal Ga-doped CuS film was 72.4%, which was approximately 1.5 times as high as that of the pure CuS film. This can be ascribed to the enhanced plasmonic NIR absorption that resulted from an increase in the hole concentration after doping with Ga³⁺ ions. In the thermal performance test, the Ga-doped CuS film lowered the interior temperature of the heat box by 9.1 °C. Therefore, the integration of good visible transmittance and high NIR shielding performance make the Ga-doped CuS nanocrystals a promising candidate for energy-efficient window coatings.     

Microstructure and martensitic transformation of Ni–Fe–Ga–Si ferromagnetic shape memory alloys

The effects of the fourth element Si on the martensitic transformation and magnetic properties of Ni–Fe–Ga magnetic shape memory alloys were investigated. A complete thermoelastic martensitic transformation in Ni–Fe–Ga–Si alloys was observed in the temperature range of 218–285 K. The martensitic transformation temperatures of Ni–Fe–Ga alloys are obviously decreased by the substitution of Si for Ga element, that is, the substitution of 1 at.% Si for Ga leads to a decrease of martensitic transformation temperature of about 39.6 K. Moreover, the substitution of Si for Ga leads to a decrease of the saturation magnetic field and the magnetic anisotropy constant K₁ obviously.     

The negative and positive structural effects of Ga doping in the electrochemical performance of LiCoO2

The electrochemical performance of LiGa_yCo_1−yO₂ electrodes_,y = 0.005 and 0.1, was studied. Charge/discharge curves in galvanostatic condition were obtained for a series of voltages ranging from 4.35 to 4.7 V. Samples were previously characterized using X-ray diffraction (XRD), Fourier transform infrared (FTIR), X-ray absorption spectroscopy (XAS) and conductivity measurements. Comparison of data obtained for LiGa_yCo_1−yO₂ and the pristine oxide LiCoO₂ is provided. Ga doping at 0.5 mol% drastically reduces the electrode capacity fading when charges at 4.35 or 4.5 V are applied, while Ga doping at 10 mol% spoils the Ga-doped oxides electrochemical response, even at a cut-off limit of 4.35 V. These positive and negative effects were attributed to changes in both the electronic conductivity and local structure of LiCoO₂, induced by substitution of Co for Ga and cationic disorder. For y = 0.005, a slight distortion in the LiCoO₂ local structure occurs, and formation of states in the band gap that the raise oxide electronic conductivity is observed, explaining the electrochemical improvement in LiGa_yCo_1−yO₂. In contrast, hybridization with oxygen occurs when y = 0.1, opening LiCoO₂ band gap and making LiGa_yCo_1−yO₂ an insulator and a cationic disorder material that leads to poor electrochemical performance. Finally, XAS results show that Ga doping does not change the LiCoO₂ charge transfer mechanisms, where oxygen is reduced during lithium extraction.     

Characteristics of GdGaO grown by MBE

Ga₂O₃/GdGaO dielectric stacks have been grown on GaAs for MOSFETs. This paper highlights variations in the characteristics of GdGaO as the Gd flux, Ga₂O flux and substrate temperature are changed. The growth rate, composition, crystallinity are discussed and the sheet resistance of final MOSFET structures are presented. The Gd compositional variation with depth is examined using Rutherford back scattering (RBS) and electron energy loss spectroscopy (EELS).     

用VB6.0编制"华容道"游戏

本文介绍了如何用VB6.0编制“华容道”游戏，并描述了软件的功能及其实现方法。作者根据事件驱动的程序设计思想，重点介绍了实现游戏基本规则和自动动画演示功能的方法，并给出了相应的VB代码。     

Crystal Growth and Properties of Co2+ doped Y3Sc2Ga3O12 Single Crystal

Single crystal of cobalt (Co)-doped Y3Sc2Ga3O12 (YSGG) with the dimensions up to φ20×40mm3 and undoped YSGG crystal with the dimensions up to φ28×60mm3 have been grown using the Czochralski technique. The structure of the crystal was characterized by the X-ray powder diffraction (XRPD) method. The absorbance spectra of the crystal shows that it has strong absorption bands at 606 and 1540nm. The results indicate that the crystal Y3Sc2Ga3O12 may be a kind of good Q-switch material.