硬质合金长条薄片弯曲变形的控制

从毛坯厚度差、装舟方式、冷却速度、舟皿涂料等方面分析了YG8和J12硬质合金长条薄片的弯曲变形原因,提出了几种抑制弯曲变形的措施。     

Evolution of grain structure in thin film reactions

In this paper, we examine, both experimentally and theoretically, the kinetics of formation and microstructure of product phases in thin film reactions, using the Nb/Al and Ti/Al systems as our prototypes. The results of calorimetry and microscopy studies are interpreted using simple kinetic and morphology models. In particular, the kinetic models employed here focus on the nucleation and growth components of the phase formation process and the morphology models provide a starting point for the classification of product grain structures. An erratum to this article is available at .     

用保形样条方法求解非定常对流扩散方程

在欧拉-拉格朗日分裂方法的基础上,本文发展了一种固定网格上的欧拉-拉格朗日分裂方法.保形样条方法(SPSM)被用来解决倒特征线插值问题.通过求解几个有精确解的例子,说明SPSM方法的解是单调无振荡的,并且数值耗散也是比较小的.     

Electrical/electronic effects of titanium and iron impurities in EFG and FZ solar cell silicon: SPV/EBIC analysis

In this paper results on surface photovoltage (SPV) and electron beam induced conductivity (EBIC) studies of edge-defined film-fed growth (EFG) and floating zone (FZ) silicon solar cell materials (both p-type) are presented. A systematic comparison based on minority carrier diffusion length and carrier recombination is made between: (i) samples contaminated with Ti and/or Fe, (ii) samples gettered by phosphorous diffusion, and (iii) as-received samples. Deep level transient spectroscopy (DLTS) measurements, together with the iron-boron (FeB) pairing kinetics [1] have successfully been used to detect the presence of Fe in the samples. Even though this process is effective in revealing Fe impurities in p-type FZ silicon it is evidently not suitable for Fe identification in p-type EFG silicon. Ti, like Fe, is found to be a prominent lifetime-limiting metallic impurity in both EFG and FZ silicon. Phosphorous diffusion is proven to be an effective external gettering technique for fast-diffusing impurities such as Fe, but not for Ti.     

机床工具产品色彩造型初探

本文针对我国机床工具产品色彩设计的现状,结合具体实例,对色彩造型的实质做了初步的探讨。分析了色彩造型和色彩装饰两种设计观和实践效果;以色彩与形状关系及作用的论证为引,论述色彩造型的三大功能作用。并提出可供机床工具产品色彩设计参考的具体设计方法和手段。     

Strain analysis of moving objects using a Fourier transform grid method

There is no good method to measure the shape and the strain distributions of a structure changing with time. We have previously proposed the Fourier transform grid method (FTGM) to measure the three-dimensional shape and surface strain distributions of stationary objects by analysing the two-dimensional grating images recorded with two cameras. In the stereoscopic method, it is very important to determine the accurate geometric parameters of the camera system. In this paper, the positions and the directions of cameras are accurately determined using the FTGM applied to images of a reference object on which a two-dimensional grating is drawn. Applications for analysing shape and strain distributions of vibrating rubber plates and a moving human skin are shown.     

Influence of Ti Powder Characteristics on Combustion Synthesis of Porous NiTi Alloy

Porous NiTi shape memory alloy (SMA) is a novel biomedical material used for human hard tissue implant .The influence of elemental titanium powder characteristics such as powder morphology, particle size and specific surface area( SSA) on the minimal ignition temperature ,combustion temperature and final product of porous Ni-Ti SMA fabricated by combustion synthesis method was investigated in this paper by scanning electron microscopy (SEM) and laser diffraction.The preliminary data indicated that the titanium powder characteristics had a strong effect on combustion synthesis of porous NiTi SMA.     

高速钢高温形变诱发析出的研究

本文探讨了高速钢在高温形变过程中碳化物析出的行为及奥氏体组织状态对析出的影响。用透射电镜和扫描电镜分析了不同热处理状态奥氏体的组织结构,分析了高温形变过程中碳化物析出的部位,颗粒尺寸及形态。试验表明, 碳化物主要在奥氏体的缺陷处呈点状和点列状析出,大小为20mμ。处于回复状态的奥氏体缺陷诱发碳化物析出,析出碳化物钉札缺陷阻止再结晶进行。当再结晶驱动力较大时,由于动态再结晶充分发展,使缺陷大量消除,碳化物析出显著地减少。     

激光结晶a-Si:H SOI离子注入和快速退火

本文对激光结晶a-Si∶H SOI结构砷注入和快速退火行为作了研究.a-Si∶H激光结晶有Lp-LCR,OD,FCR-2,FCR-1四个结晶区.用剖面电镜观察了结晶区的结构.扩展电阻测量表明Lp-LCR区中有两种扩散机制,即杂质在晶粒体内扩散和沿缺陷扩散.OD区中有三种扩散形式,除有上述两种以外,还有沿缺陷的扩散.首次比较了沿晶界和缺陷的扩散速度.     

Extracting Electron Densities in N-Type GaAs From Raman Spectra: Theory

In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q²/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations.