An antimonene modified hole extraction layer for high efficiency PEDOT:PSS-free nonfullerene organic solar cells

In this paper, a bilayer hole extraction layer (HEL) with solution-processed molybdenum trioxide (MoO₃) and two-dimensional (2D) material of antimonene was developed to achieve high performance nonfullerene organic solar cells (NF–OSCs). The application of antimonene facilitates effective charge extraction and lowered recombination loss, achieving improved photovoltaic performance. By inserting the antimonene layer, power conversion efficiency (PCE) of devices with MoO₃ HEL was increased from 8.92% to 11.30% in OSCs with non-fullerene systems of PBDB-T-2F:IT-4F, which was even much higher than that of the devices with PEDOT:PSS HEL (10.59%). Results make it clear that the solution-processed bilayer MoO₃/antimonene HEL shows great potential for application in high performance PEDOT:PSS-free NF–OSCs.     

Epitaxial growth of nonpolar GaN films on r-plane sapphire substrates by pulsed laser deposition

Single-crystalline nonpolar GaN epitaxial films have been successfully grown on r-plane sapphire (Al₂O₃) substrates by pulsed laser deposition (PLD) with an in-plane epitaxial relationship of GaN[1-100]//Al₂O₃[11-20]. The properties of the ~500 nm-thick nonpolar GaN epitaxial films grown at temperatures ranging from 450 to 880 °C are studied in detail. It is revealed that the surface morphology, the crystalline quality, and the interfacial property of as-grown ~500 nm-thick nonpolar GaN epitaxial films are firstly improved and then decreased with the growth temperature changing from 450 to 880 °C. It shows an optimized result at the growth temperature of 850 °C, and the ~500 nm-thick nonpolar GaN epitaxial films grown at 850 °C show very smooth surface with a root-mean-square surface roughness of 5.5 nm and the best crystalline quality with the full-width at half-maximum values of X-ray rocking curves for GaN(11-20) and GaN(10-11) of 0.8° and 0.9°, respectively. Additionally, there is a 1.7 nm-thick interfacial layer existing between GaN epitaxial films and r-plane sapphire substrates. This work offers an effective approach for achieving single-crystalline nonpolar GaN epitaxial films for the fabrication of nonpolar GaN-based devices.     

Exciton-induced degradation of organic/electrode interfaces in ultraviolet organic photodetectors

We study the degradation mechanisms of ultraviolet (UV) organic photodetectors (OPDs). Contrary to expectations, we determine that the bulk of the organic layers in UV OPDs is stable under prolonged UV irradiation, showing no detectable changes in photophysical characteristics such as photoluminescence yield and exciton lifetime and thus not contributing to the observed degradation behavior of UV OPDs. However, the results show that the organic/electrode interfaces in UV OPDs, including indium tin oxide (ITO)/organic and organic/metal ones, are susceptible to UV irradiation, leading to a deterioration in both charge injection and extraction across the interfaces. The degradation of the organic/electrode interfaces in UV OPDs is essentially induced by UV-generated excitons in their vicinity and may be responsible for nearly 100% of the photo-current loss of UV OPDs. Approaches for improving the photo-stability of organic/electrode interfaces, and thus the lifetime of UV OPDs, are also investigated. We demonstrate that the use of thin (∼0.5 nm) interfacial layers such as lithium acetylacetonate at organic/metal interfaces can significantly reduce the interfacial degradation, and the use of appropriate hole transport materials such as N,N′-bis (naphthalen-1-yl)-N,N′-bis(phenyl) benzidine at ITO/organic interfaces can greatly improve the interfacial photo-stability.     

A surface modification layer capable of tolerating substrate contamination on transparent electrodes of organic electronic devices

An organic molecule, hexaazatriphenylene hexacarbonitrile (HAT-CN), is found that it can be used not only as a hole-injecting material but also a surface modification material to clean contaminated substrate electrodes for the fabrication of organic electronic devices. As an example, HAT-CN can modify or “clean” indium-tin-oxide (ITO) anode surface in organic light-emitting diodes (OLEDs). Negative effect from ITO surface contamination on the electroluminescence performance of OLEDs can be dramatically reduced with this modification layer. As a result, the OLEDs with the same device architecture but with different ITO surface conditions, even with intentional contamination, can all exhibit substantially identical and superior electroluminescence performance. The surface modification function of this material is feasibly useful for the real fabrications of OLEDs as well as for advanced research on other organic electronic devices.     

Fused-ring electron acceptor as an efficient interfacial material for planar and flexible perovskite solar cells

Perovskite solar cell (PSC) has attracted great attention due to its high power conversion efficiency (PCE), low cost and solution processability. The well-designed interface and the modification of electron transport layer (ETL) are critical to the PCE and long-term stability of PSCs. In this article, a fused-ring electron acceptor is employed as the interfacial material between TiO₂ and the perovskite in rigid and flexible PSCs. The modification improves the surface of TiO₂, which decreases the defects of ETL surface. Moreover, the modified surface has lower hydrophilicity, and thus is beneficial to the growth of perovskite with large grain size and high quality. As a result, the interfacial charge transfer is promoted and the interfacial charge recombination can be suppressed. The highest PCE of 19.61% is achieved for the rigid PSCs after the introduction of ITIC, and the hysteresis effect is significantly reduced. Flexible PSC with ITIC obtains a PCE of 14.87%, and the device stability is greatly improved. This study provides an efficient candidate as the interfacial modifier for PSCs, which is compatible with low-temperature solution process and has a great practical potential for the commercialization of PSCs.     

Zwitterionic ammonium and neutral amino molecules as cathode interlayer for inverted polymer solar cells

Cathode interlayer is essential to inverted bulk heterojunction polymer solar cells (PSCs). A series of zwitterionic ammonium and neutral amino organic molecules are introduced into inverted PSCs as cathode interlayer and power conversion efficiency (PCE) as high as 8.07% is demonstrated. Compared to the devices without interlayer, all the devices exhibit significant improvements of the device parameters by reducing the work function of indium tin oxide (ITO) cathode. It is striking that the devices with neutral amino molecules as interlayer exhibit remarkably higher PCEs than the devices with zwitterionic ammonium molecules as interlayer. We attribute the improved performance to the better photoactive morphology induced by the hydrophobic properties of the neutral amino derivatives through research of ultraviolet photoelectron spectroscopy, atomic force microscopy, and contact angle measurements. Interestingly, the PCEs of the inverted PSCs with cathode interlayer are positively correlated with the hydrophobic properties of the interlayer materials, since devices with neutral amino molecules or molecules with a more hydrophobic alkyl pendant (piperidine) as interlayer exhibit higher PCEs. These results pave the way to the design of effective cathode interlayer materials.     

Hillock and Whisker Growth on Sn and SnCu Electrodeposits on a Substrate Not Forming Interfacial Intermetallic Compounds

Intermetallic compound (IMC) formation at the interface between the tin (Sn) plating and the copper (Cu) substrate of electronic components has been thought to produce compressive stress in Sn electrodeposits and cause the growth of Sn whiskers. To determine if interfacial IMC is a requirement for whisker growth, bright Sn and a Sn-Cu alloy were electroplated on a tungsten (W) substrate that does not form interfacial IMC with the Sn or Cu. At room temperature, conical Sn hillocks grew on the pure Sn deposits and Sn whiskers grew from the Sn-Cu alloy electrodeposits. These results demonstrate that interfacial IMC is not required for initial whisker growth.     

Cracking energy estimation of ultra low-k package using novel prediction approach combined with global-local modeling technique

Interfacial crack/delamination, due to the presence of dissimilar material systems, is one of the major concerns of thermo-mechanical reliability for the development of next node technology in integrated circuits (IC) devices. The cracking energy results from many back end of line (BEOL) and packaging processes at various temperature differences is prone to drive the crack advance. To investigate the sensitivity of crack propagation in low-k dielectric materials, a robust estimation of J-integral approach combined with a rectangular path of integral contour is performed using finite element analysis (FEA). By means of the verification of 4-point bending test (4-PBT), excellent agreements are obtained as compared with the experimental data. Moreover, a multiscale modeling technique is proposed to resolve the difficulty of model construction as from bridge device level to packaging level. The sub-modeling procedures developed specifically for the impact prediction of interfacial crack in complicated Cu/low-k interconnects. The analytic results indicate the foregoing methodology is valuable to forecast the physical behavior and reliability of advanced IC devices in the nano scaled size. On the basis of the presented results in this research, an approximated criterion for determining the dimensions of sub-model is suggested and demonstrated as well.     

Interfacial Reactions between Eutectic SnZn Solder and Bulk or Thin-Film Cu Substrates

Interfacial reactions between eutectic SnZn solder and bulk or thin-film Cu substrates are investigated and compared. The thicknesses of bulk and thin-film Cu substrates are 0.5 mm and 4,000 ?, respectively. Different dominant reaction products and interfacial microstructures are observed in these two types of interfacial reactions. In the bulk Cu type, the Cu₅Zn₈ phase is the dominant reaction product under reflow and solid-state annealing. However, the CuZn₅ phase becomes the dominant reaction product in the thin-film Cu type. The Cu₅Zn₈ phase in the bulk Cu type remains as a uniform microstructure after reflow. After solid-state annealing, however, the Cu₅Zn₈ phase fractures and the Cu₆Sn₅ and Cu₃Sn phases are formed at the Cu₅Zn₈/Cu interface. The CuZn₅ phase in the thin-film Cu type ripens after reflow and the phase morphology is transformed from a uniform layer into separated scallops. In situ observation of the interfacial microstructure after solid-state annealing reveals that prominent deformation occurs in the solder region close to the interface in the bulk Cu type. While in the thin-film Cu type, the CuZn₅ grain is extruded out of the interface.