岩石声发射 Kaiser 效应测定地应力研究及工程应用

介绍了用声发射Ｋａｉｓｅｒ效应测定岩体地应力的原理、方法和测试技术以及数据处理。结合小浪底工程进行了ＡＥ法地应力测量，其结果与应力解除法比较一致。     

“两图一表”在学生宿舍管理中的应用

“两图一表”是指排列图、因果分析图和对策表。将它应用于学生宿舍管理,能够较快地发现存在的问题及其产生原因,有针对性地予以改进,有助于提高管理水平和效率。     

邻基参与与非经典碳正离子

描述了非经典碳正离子和经典碳正离子的区别及邻基参与形成的非经典碳正离子．     

对地方矿井设计的综合评价探讨

根据矿井的地质条件指标与技术经济效果指标，采用综合评价的方法对比了三部矿井设计，得出了与投资效果分析一致的合理结论。     

闪烁体部分性能的测试方法

本文介绍了闪烁体相对光输出，相对能量转换效率，固有幅度分辨率，探测效率测试法及其温度效应。     

一种有效的视频信号编码块效应消减技术

针对视频信号编码中存在的块效应，提出了一个能有效提高解码图象质量的编码方案。首先，给出一种按系数自适应ＤＣＴ编码算法的新的逻辑实现结构；然后，用一种简单而有效的自适应控制策略来代替极其复杂费时的严格的自适应方法。同时，为了克服低比特率下粗糙量化导致自适应性能下降的缺点，设计了一种具有良好性能的运动估计快速算法用来提高适应能力。实验结果表明，与常规的基于ＤＣＴ的编码方法相比，这种编码方案性能有显著的提高。     

分室定位反吹袋式除尘器在300MW燃煤锅炉上的应用

山西阳光发电有限责任公司将原有电除尘器改造为FMFBD-46000型袋式除尘器后,实现了外滤式分室定位净化烟气微压、无功耗、无氧化、无温差反吹清灰。改造中,首次大面积应用了国产玻璃纤维针刺毡滤料。先进的烟道截止阀技术,实现了1～3通道带满负荷;第4通道在线切换安装,减少了锅炉停炉损失。改造中主要把握了清灰技术、在线切换检修技术、滤袋保护技术、烟气置换技术、设备运行可靠性、运行检修经济性、粉尘排放质量浓度、系统漏风率、滤袋性能及使用寿命等关键部分。设备改造后,粉尘排放质量浓度、排放粉尘量均达到了国际先进粉尘排放水平。     

五强溪水电站混流式机组不稳定现象的分析和处理

本文介绍了五强溪水电站机组的运行稳定性,分析了引起振动的原因,并阐述了改进措施及改善效果.改变混流式水轮机泄水锥的结构,可以降低尾水管压力脉动值.     

Stress dependence of sensitivity of fluxgate sensor

This paper presents results of investigation of the stress sensitivity of the fluxgate sensor with amorphous alloy (CoFe)₈₉(MnMoSiB)₁₁ (Vitrovac 6150F) ring core. Stress was applied in two directions: perpendicularly to the flux density in the ring core or in the direction of diameter of the ring. The influence of mechanical stress from the external forces on magnetic properties of this ring core was measured. Then results of this testing were used in computer simulation of the influence of the stress on the output signal of the fluxgate sensor.     

The Effective Conduction Band Edge Method of Quantum Correction to the Monte Carlo Device Simulation

To include quantum effects, a quantum correction is made to the semi-classical Monte Carlo (MC) simulation by the effective conduction band edge (ECBE) method. The quantum corrected potential energy can be calculated from the classical potential energy by the ECBE equation and thus the quantum mechanical force in the simulation replaces the classical force. Under the non-equilibrium condition, carriers have a temperature different from the lattice. For the simulation of a double-gate MOSFET, we replace thermal energy in the ECBE equation with the average value of the stress tensor along each transverse line, to account for the variation of the electron “temperature” along the longitudinal direction. A 3 nm thick double gate nMOSFET is simulated. The result shows that electrons now see a higher barrier from the source to the drain if the carrier temperature is considered, resulting in a smaller drain current compared to that obtained from the previous ECBE method.