Microchip power compensated calorimetry applied to metal hydride characterization

In this work, we show the suitability of the thin film membrane-based calorimetric technique to measure kinetically limited phase transitions such as the dehydrogenation of metallic hydrides. Different compounds such as Mg, Mg/Al and Mg₈₀Ti₂₀ have been deposited over the active area of the microchip by electron beam evaporation. After several hydrogenation treatments at different temperatures to induce the hydride formation, calorimetric measurements on the dehydrogenation process of those thin films, either in vacuum or in air, are performed at a heating rate of 10 °C/min. We observe a significant reduction in the onset of dehydrogenation for Mg₈₀Ti₂₀ compared with pure Mg or Mg/Al layers, which confirms the beneficial effect of Ti on dehydrogenation. We also show the suitability of the membrane-based nanocalorimeters to be used in parallel with optical methods. Quantification of the energy released during hydrogen desorption remains elusive due to the semi-insulating to metallic transition of the film which affects the calorimetric trace.     

Improvement of hydrogen storage properties of the AB2 Laves phase alloys for automotive application

Hydrogen storage properties of the Ti_1.1CrMn AB₂-type Laves phase alloys, for both low (−30 °C) and high (80 °C) temperature applications, are improved by substituting Zr at Ti site. In agreement with the larger radius of Zr than Ti, the lattice volume of (Ti_1−xZr_x)_1.1CrMn (x=0, 0.05, 0.06 and 0.1) alloys, prepared by arc melting, increases with x. The increase in the Zr content leads to a decrease in the equilibrium hydrogen sorption pressure plateau and faster absorption kinetics, associated with an increase in the hydrogen storage capacity from 1.9 to 2.2 wt% for Ti_1.1CrMn and (Ti_0.9Zr_0.1)_1.1CrMn alloys, respectively. At −5 °C, (Ti_0.9Zr_0.1)_1.1CrMn alloy reversibly absorbs and desorbs 2.2 wt% at 160 bar within 250 s. Based on thermodynamic calculated values, the optimized Zr substituted alloy (Ti_0.9Zr_0.1)_1.1CrMn desorbs hydrogen at 3.2 bar at −30 °C and 135 bar at 80 °C. This is a significant reduction of the sorption pressure plateau as compared with the current technology for mobile applications based on Ti_1.1CrMn alloy with hydrogen desorption plateau above 400 bar at 80 °C. Finally, the mechanism of improved hydrogen storage properties is discussed based on the radius and the hydrogen affinity of the substituting element.     

金属磁性衬板在鲁中选矿厂的应用与分析

通过对金属磁性衬板的实际应用和生产考查，初步表明了金属磁性衬板替代锰钢衬板的优越性。文中还对存在的问题提出了改进的意见。     

三维地震数据的可视化

传统的地震数据解释方法是利用地震剖面与水平切片的二维图象显示三维数据,它具有很大的局限性。科学可视化技术的出现使得三维数据三维解释成为可能。将科学可视化技术应用于三维地震数据场,则产生了三维地震数据可视化技术,它主要包括面可视化与直接体绘制两种技术。本文主要研究三维地震数据场的直接体绘制方法——光线投射算法。     

高k电介质及其设备

"2007年11月,英特尔量产高k电介质45nm微处理器"。它表明高k电介质/金属栅极技术已商业化。它可确保摩尔定律至少再延续10年。但是,ITRS2006修正版指出,高k电介质/金属栅极在低静态功耗(LSTP)逻辑IC的预期应用时间是2008年,高k电介质/金属栅极在高性能和低功耗(LOP)IC的预期应用时间是2010年。制造高k电介质的设备是化学气相沉积(CVD)或原子层沉积(ALD)设备。制造金属栅极的设备是物理气相沉积(PVD)和ALD设备。     

Study of metal assisted anisotropic chemical etching of silicon for high aspect ratio in crystalline silicon solar cells

Textured surface is commonly used to enhance the efficiency of silicon solar cells by reducing the overall reflectance and improving the light scattering. In this study, a comparison between isotropic and anisotropic etching methods was investigated. The deep funnel shaped structures with high aspect ratio are proposed for better light trapping with low reflectance in crystalline silicon solar cells. The anisotropic metal assisted chemical etching (MACE) was used to form the funnel shaped structures with various aspect ratios. The funnel shaped structures showed an average reflectance of 14.75% while it was 15.77% for the pillar shaped structures. The average reflectance was further reduced to 9.49% using deep funnel shaped structures with an aspect ratio of 1:1.18. The deep funnel shaped structures with high aspect ratios can be employed for high performance of crystalline silicon solar cells.     

基于形状插值的B超图像三维表面重建

B超图像由于受其成像机理的限制,其成像质量较差,无法采用与CT(计算机断层扫描)、MRI(磁共振成像)类似的三维重建方法。针对B超图像的缺点,采用基于形状的插值方法将其转换为等分辨率体数据。此外,对插值算法进行了适当改进,使重建的速度和效果得到明显改善。最后,分别采用移动立方体(marching cubes)算法、连接轮廓线、光线投射(ray casting)算法对B超图像进行三维重建。结果表明,移动立方体算法在重建的真实性和快速性方面都得到了更满意的效果。     

Deposition thickness based high-throughput nano-imprint template

International Technology Roadmap for Semiconductors 2003 projected nano-imprint lithography has the potential of high throughput, sub-20 nm resolution, and low cost [S.Y. Chou, P.R. Krauss, P.J. Renstrom, Appl. Phys. Lett. 67 (1995) 3144; Science 272 (1996) 85, J.A. Rogers, C. Mirkin, Mater. Res. Bull. 26 (2001)]. For nano-imprint lithography, a template with 1X resolution is required. The existing industrial infrastructure for supporting deep ultra violet 4X photo masks by e-beam and/or a laser beam scanning writer does not offer pitch (center-to-center distance of an array of patterned lines) less than ∼60 nm [<http://public.itrs.net/2003ITRS>]. For nano-imprint lithography to be accepted across the industry, a reproducible simple fabrication process to make a high resolution, single emboss template is essential [L. Jay Guo, J. Phys. D: Appl. Phys. 37 (2004) R123-R141]. Here we show, a general fabrication method and fabricated nano-imprint templates with sub-15 nm template line width and 10 nm pitch length through out the entire 200 mm wafer, varying the deposition thickness of multiple alternate films, using atomic layer deposition. Although multilayer nano-imprint templates and their exciting use have been demonstrated, [W.J. Dauksher et al., J. Vac. Sci. Technol. B 22 (2004) 3306, B. Heidari, et al., The 49th international conference on electron, ion and photon beam technology and nanofabrication, Orlando, Florida, 2005, William M. Tong, et al., Proc. SPIE 5751 (2005) 46-55, N.A. Melosh, A. Boukai, F. Diana, B. Gerardot, A. Badolato, P.M. Petroff, J.R. Heath, Science 300 (2003) 112] such a small pitch was not shown and either complex lattice mismatch-based epitaxially grown films or unconventional etch chemistry was used. The bare necessity was a simple and economical fabrication process for a high throughput nano-imprint template. In that context, we have developed a template fabrication process using classical micro-fabrication techniques. Successful use of these techniques made the template fabrication process simple, economical, and expedient. Also a novel technique to provide flexible and accurate alignment for nanowire patterning has been described. In this technique, nanowire patterning is accomplished on the entire wafer with a single impression. Industry level batch-fabrication of our scheme illustrates its reproducibility and manufacturability. We anticipate, this simple, economical and time saving technique will help researchers and developers to perform their experiment on nano-scale feature patterned substrates easily and conveniently.     

Effects of post-lift-off annealing conditions on contact oxidation of Ti–Au top-contacts in In-Sn–Zn–O TFT

Thin film transistors (TFT) with an indium based mixed oxide semiconductor are investigated for titanium–gold top-contacts. It is noticed that upon post annealing, in order to remove chemical residuals from top-contact lift-off steps, oxidation of titanium occurs depending on the annealing conditions. Mobility of the TFT is strongly affected by contact oxidation arising from this post lift-off annealing process. Oxidation of the top-contact is facilitated by adsorbed surface oxygen or out-diffusing oxygen from the semiconductor depending on the post lift-off annealing conditions. A passivation layer that binds effectively to surface vacancies and removes adsorbed oxygen species from the semiconductor surface is demonstrated. The combinations of this passivation layer with relatively low temperature and short post lift-off annealing in an oxygen deficient environment result in significantly reduced contact oxidation and subsequently better transistor performance. Contact resistance as low as 90 Ω cm and mobility as high as 5.3 cm²/V s are obtained for solution processed mixed metal oxide semiconductor in top-contact geometry.     

All-printed and highly stable organic resistive switching device based on graphene quantum dots and polyvinylpyrrolidone composite

We propose all printed and highly stable organic resistive switching device (ORSD) based on graphene quantum dots (G-QDs) and polyvinylpyrrolidone (PVP) composite for non-volatile memory applications. It is fabricated by sandwiching G-QDs/PVP composite between top and bottom silver (Ag) electrodes on a flexible substrate polyethylene terephthalate (PET) at ambient conditions through a cost effective and eco-friendly electro-hydrodynamic (EHD) technique. Thickness of the active layer is measured around 97 nm. The proposed ORSD is fabricated in a 3 × 3 crossbar array. It operates switching between high resistance state (HRS) and low resistance state (LRS) with OFF/ON ratio ∼14 for more than 500 endurance cycles, and retention time for more than 30 days. The switching voltage for set/reset of the devices is ±1.8 V and the bendability down to 8 mm diameter for 1000 cycles are tested. The elemental composition and surface morphology are characterized by XPS, FE-SEM, and microscope.