激光结晶a-Si:H SOI离子注入和快速退火

本文对激光结晶a-Si∶H SOI结构砷注入和快速退火行为作了研究.a-Si∶H激光结晶有Lp-LCR,OD,FCR-2,FCR-1四个结晶区.用剖面电镜观察了结晶区的结构.扩展电阻测量表明Lp-LCR区中有两种扩散机制,即杂质在晶粒体内扩散和沿缺陷扩散.OD区中有三种扩散形式,除有上述两种以外,还有沿缺陷的扩散.首次比较了沿晶界和缺陷的扩散速度.     

Ge/Pd/n-GaAs低阻欧姆接触的SIMS分析

采用Ge／Pd／GaAs结构和快速热退火在n－GaAs上形成了低阻欧姆接触。利用H次离子质谱（SIMS）技术揭示和讨论了低欧姆接触形成的机理。比较了采用X 和CsX 信号检测的Ge，Pd，Ga和As的深度分布。结果表明采用CSX 可以提供更准确的结果和成分信息。     

An automatic method for controlling the centre of gravity of a model

In many applications the location of the centre of gravity of a mechanical part is an important factor that a designer must consider. If it is not in a desired location, a part might not work properly, e.g. unbalanced force might be generated in a rotational part. After a part is modeled, its centre of gravity cannot be altered unless its external shape or internal mass distribution is changed. However, the external shape is usually constrained by other design considerations. In this paper, an algorithm is proposed for controlling the centre of gravity of a hollowed part. Using this algorithm, the location of the centre of gravity of a part is controlled by changing its internal mass distribution.     

YAG激光熔覆的研究现状与发展趋势

本文介绍了YAG激光熔覆的特点，并与CO2激光进行了比较，显示了YAG激光熔覆的优势和潜力。叙述了YAG激光熔覆的研究进展及其应用前景。     

用离子束混合及快速热处理方法形成钽的硅化物

本文描述用离子束透过钽金属膜进行混合和快速热处理方法来形成钽的硅化物.用溅射方法在P型硅衬底上淀积一层金属钽,然后用砷离子束透过钽金属模进行混合,采用快速热处理后形成了平整的硅化钽薄层.使用厚度为500埃的钽金属膜,得到钽的硅化物薄层电阻为5.5Ω/□.研究了砷离子能量、剂量及钽膜厚度对钽的硅化物薄层电阻的影响.用透射电镜和台阶仪对所形成的硅化钽进行了分析和厚度测量.     

喷射沉积柱状坯形状模型

通过坐标跟踪法建立了沉积坏形状预测模型。该模型不但考虑沉积坯任何表面点身自位置变化对沉积效果的影响，同时考虑了该点温度和其它表面点位置对该点沉积效果的影响，其计算过程严格按照喷射成形的实际过程执行，可实时计算并记录沉积坯的形貌，并验证了计算效果。本文模型可用于多种工艺下喷射沉积坯的形状预测。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

骨组织工程PLGA/TCP复合材料的性能研究

骨组织工程的支架要求有与人骨在功能梯度上相一致的材料结构、几何结构和生理功能。PLGA／TCP复合材料具有适用于骨组织工程支架的综合性能。以快速成形技术低温沉积工艺的成形效果来评价材料的成形性能，以体外降解试验来评价材料的降解性能，以国家标准的方法来评价材料的细胞毒性，对PLGA和TCP不同配比下的性能进行了研究，发现TCP含量的增加有利于降低材料的细胞毒性，加快了材料的降解，但同时降低了材料的成形性能。从骨组织工程的临床应用来看，低的细胞毒性是需要首先得到保证的，成形性能则通过其他方式来改善。     

小型回旋加速器虚拟样机技术

小型回旋加速器虚拟样机技术是把小型回旋加速器的理论计算、分析、信息技术与机械设计、加工、装配、调试、运行、维修等专家知识进行有机结合，在系统仿真和虚拟现实基础上发展起来的一种新概念技术。基于虚拟样机，可以实现创新设计，有效降低探索风险。文章探讨了回旋加速器虚拟样机系统框架，讨论了虚拟样机系统的体系结构和回旋加速器产品的全生命周期仿真，提出了基于全生命周期集成和多学科协同设计的回旋加速器虚拟样机的开发思路。