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51.
Fan Xia Bomin Li Yiqi Liu Yuzi Liu Siyuan Gao Ke Lu Jacob Kaelin Rongyue Wang Tobin J. Marks Yingwen Cheng 《Advanced functional materials》2021,31(47):2104716
Electrocatalytic two-electron reduction of oxygen is a promising method for producing sustainable H2O2 but lacks low-cost and selective electrocatalysts. Here, the Chevrel phase chalcogenide Ni2Mo6S8 is presented as a novel active motif for reducing oxygen to H2O2 in an aqueous electrolyte. Although it has a low surface area, the Ni2Mo6S8 catalyst exhibits exceptional activity for H2O2 synthesis with >90% H2O2 molar selectivity across a wide potential range. Chemical titration verified successful generation of H2O2 and confirmed rates as high as 90 mmol H2O2 gcat−1 h−1. The outstanding activities are attributed to the ligand and ensemble effects of Ni that promote H2O dissociation and proton-coupled reduction of O2 to HOO*, and the spatial effect of the Chevrel phase structure that isolates Ni active sites to inhibit O O cleavage. The synergy of these effects delivers fast and selective production of H2O2 with high turn-over frequencies of ≈30 s−1. In addition, the Ni2Mo6S8 catalyst has a stable crystal structure that is resistive for oxidation and delivers good catalyst stability for continuous H2O2 production. The described Ni-Mo6S8 active motif can unlock new opportunities for designing Earth-abundant electrocatalysts to tune oxygen reduction for practical H2O2 production. 相似文献
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53.
用X射线衍射和X射线光电子能谱技术,对分舟热蒸发法研制的掺铒(Er)硫化锌直流电致发光薄膜及硫化锌粉料进行剖析,获得薄膜表面及粉料的构态信息,讨论了影响微晶薄膜质量的主要因素。 相似文献
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Y.Y. Gomeniuk Y.V. GomeniukI.P. Tyagulskii S.I. TyagulskiiA.N. Nazarov V.S. LysenkoK. Cherkaoui S. MonaghanP.K. Hurley 《Microelectronic Engineering》2011,88(7):1342-1345
The paper presents the results of capacitance-voltage, conductance-frequency and current-voltage characterization in the wide temperature range (140-300 K) as well as results of low temperature (5-20 K) thermally stimulated currents (TSC) measurements of metal-oxide-semiconductor (MOS) structures with a high-κ LaSiOx dielectric deposited on p- and n-type Si(1 0 0) substrate. Interface states (Dit) distribution determined by several techniques show consistent result and demonstrates the adequacy of techniques used. Typical maxima of interface states density were found as 4.6 × 1011 eV−1cm−2 at 0.2 eV and 7.9 × 1011 eV−1cm−2 at 0.77 eV from the silicon valence band. The result of admittance spectroscopy showed the presence of local states in bandgap with activation energy Ea = 0.38 eV from silicon conductance band, which is in accord with interface states profile acquired by conductance method. Low-temperature TSC spectra show the presence of shallow traps at the interface with activation energies ranging from 15 to 32 meV. The charge carrier transport through the dielectric film was found to occur via Poole-Frenkel mechanism at forward bias. 相似文献
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57.
Microstructural modifications and properties of Sn-Ag-Cu solder joints induced by alloying 总被引:1,自引:0,他引:1
I. E. Anderson B. A. Cook J. Harringa R. L. Terpstra 《Journal of Electronic Materials》2002,31(11):1166-1174
Slow cooling (1–3°C/sec) of Sn-Ag-Cu and Sn-Ag-Cu-X (X = Fe, Co) solder-joint specimens, made by hand soldering, simulated
reflow in a surface-mount assembly to achieve similar as-solidified joint microstructures for realistic shear-strength testing,
using Sn-3.5Ag (wt.%) as a baseline. Consistent with predictions from a recent Sn-Ag-Cu ternary phase-diagram study, either
Sn dendrites, Ag3Sn primary phase, or Cu6Sn5 primary phase were formed during solidification of joint samples made from the selected near-eutectic Sn-Ag-Cu alloys. Minor
substitution of Co for Cu in Sn-3.7Ag-0.9Cu refined the joint-matrix microstructure by an apparent catalysis effect on the
Cu6Sn5 phase, whereas Fe substitution promoted extreme refinement of the Sn-dendritic phase. Ambient-temperature shear strength
was reduced by Sn dendrites in the joint microstructure, especially coarse dendrites in solute poor Sn-Ag-Cu, e.g., Sn-3.0Ag-0.5Cu,
while Sn-3.7Ag-0.9Cu with Co and Fe additions have increased shear strength. At elevated (150°C) temperature, no significant
difference exists between the maximum shear-strength values of all of the alloys studied. 相似文献
58.
王丽七 《兵器材料科学与工程》2012,35(6):78-81
采用机械合金化-电场激活压力辅助合成(MA-FAPAS)技术,快速合成Sc,Sb掺杂的Mg2Si基热电材料,并对其进行电性能的测试与分析。结果表明:掺杂摩尔分数为0.47%Sb的Mg2Si试样在测试温度范围内,电导率和Seebeck系数均优于未掺杂试样,其平均电功率因子约为后者的2.2~2.3倍;电导率比采用熔融-热压法制备的同类试样有所提高;在低温阶段,掺杂摩尔分数为0.43%Sc的Mg2Si试样Seebeck系数约为307 K,达未掺杂试样的2.03倍;电功率因子在温度低于550 K时高于未掺杂试样,最大值与Sb掺杂试样相当。 相似文献
59.
60.
采用水热法合成了Eu3+单掺YF3荧光粉.分析了样品的结构与形貌,结果表明,所合成的样品为单相,颗粒粒度分布均匀.测定了YF3:Eu3+的激发和发射光谱,结果显示,激发光谱峰值分别为320,365,386,397,418和467 nm,激发主峰峰值位于397 nm;发射光谱由位于591 nm(5D0→F1)和612 n... 相似文献