雕刻技术的研制和应用

在对铝合金铸件进行X射线实时探伤时，由于采集回来的许多图像的目标物体的轮廓比较模糊，这样在评片时容易造成对铸件的误判和漏判。针对这种现象并结合这类图像噪声源多的特点，在研究常用卷积算法的基础上，采用特殊卷积（特殊的卷积核）操作，同时根据雕刻的艺术底色为灰色，最后给卷积结果加上灰度值128，实验结果表明图像中目标物体的轮廓变得更清楚，同时处理后的图像具有比较好的三维效果，这给工作人员在看图时带来了方便。     

Performance discrepancies on the California Verbal Learning Test-Second Edition (CVLT-II) in the standardization sample.

The standardization data for the California Verbal Learning Test-Second Edition (CVLT-II; D. C. Delis, J. H. Kramer, E. Kaplan, & B. A. Ober, 2000) were used to evaluate the base rate of 6 specific discrepancies between various key variables. The results indicated that CVLT-II performance discrepancies should equal or exceed 1 or 1.5 z score points (depending on the individual comparison) in the hypothesized direction to be considered potentially unusual. However, because about 1 in 3 persons in the standardization sample displayed at least 1 such large discrepancy, it is concluded that these base rates should be viewed only as a starting point for interpretation. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Cued recall from image and sentence memory: A shift from episodic to identical elements representation.

The applicability of the identical elements (IE) model of arithmetic fact retrieval (T. C. Rickard, A. F. Healy, & L. E. Bourne, 1994) to cued recall from episodic (image and sentence) memory was explored in 3 transfer experiments. In agreement with results from arithmetic, speedup following even minimal practice recalling a missing word from an episodically bound word triplet did not transfer positively to other cued recall items involving the same triplet. The shape of the learning curve further supported a shift from episode-based to IE-based recall, extending some models of skill learning to cued recall practice. In contrast with previous findings, these results indicate that a form of representation that is independent of the original episodic memory underlies cued-recall performance following minimal practice. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Microstructures and Phase Transition Points of As-Cast Mg-Zn-Y System Alloys

As-east mierostruetures and their distribution of Mg-Zn-Y ternary alloy with high magnesium, low zinc and yttrium were examined using Nikon Epiphot optical microscopy （OM）, RigakuD/max-3C X- ray diffraetion （XRD）, and JEOL JSM-6700F scanning electron microscopy （SEM） equipped with an energydispersive X-ray spectroscopy （EDS）. In the as-east mierostructures, Yttrium and zinc tend to segregate at grain boundaries,     

Oxidation of Hastelloy-XR Alloy for Corrosion-Resistant Glass-Coating

The oxidation behavior of Hastelloy-XR alloy was investigated to obtain the optimum surface condition for corrosion-resistant glass-coatings. The surface morphology of oxide scales changed significantly with variation of temperatureand oxygen partial pressure (po2 ). The oxidation kinetics was mainly parabolic independent of oxidation conditions.The oxide scales were consisted of inner Cr2O3 and outer spinel layers. The phase component of spinel layers wereMn1.5Cr1.5O4 and (Mn,Ni)(Cr,Fe)2O4 for the oxygen partial pressures po2<10 kPa and po2>10 kPa, respectively.The optimum oxidation condition to obtain an oxide scale for well-adhered glass-coating to the substrate was 1248 Kand po2 =0.01 kPa for the oxidation time of 43 ks.     

噻吩在镍基非晶态合金上的吸附和脱附

应用静态吸附、动态吸附、程序升温脱附和程序升温还原等实验方法，考察了噻吩在Ni基非晶态合金上的吸附和脱附行为。常温下，噻吩分子首先吸附在清洁的Ni表面，并立刻被活化，发生氢解反应，C-S键断裂，释放出烃类部分，S留在Ni原子上。噻吩可以在Ni基非晶态合金表面发生强度不同的化学吸附。弱化学吸附的噻吩可以脱附；强化学吸附的噻吩不会脱附，而在高温下发生氢解反应。     

铁电存储器的研究进展

介绍了铁电存储器的存储原理,同时对两种铁电存储器(铁电随机存取存储器和铁电场效应晶体管存储器)的研究进展、当前存在的问题以及我国目前在这一领域的研究现状进行了简单介绍,并对今后的技术发展进行了展望。     

不锈钢管道坡口加工的新方法

对于不锈钢管及合金钢管坡口的加工,采用以往的加工方法切割出来的坡口一般参差不平、比较粗糙,难于打磨平整。使用LGK空气等离子切割机和磁力管道切割机的组合加上一定的辅助手段,改善了不锈钢管及合金钢管的坡口加工效果,使加工出来的坡口像碳钢管一样平整,更加容易打磨组焊。文章介绍了这一新方法所用的设备、材料、切割原理以及操作过程。     

嵌人式与独立存储器设计上的差异分析和研究

进入21世纪,随着集成电路的发展,SoC(System on Chip)片上系统应运而生。而作为SoC重要组成部分的嵌入式存储器,在SoC中所占的比重正逐步增加,并起着越来越重要的作用,那么嵌入式存储器与独立的存储器芯片在设计上存在着哪些差异?对此本文将以NOR型闪存为例在制造工艺的选取、衍生产品的设计、功耗与噪声、后端功能仿真、测试与修复等方面进行分析和研究。     

Improving narrow bandgap a-SiGe:H alloys grown by hot-wire chemical vapor deposition

We have improved the electronic properties of narrow-bandgap (Tauc gap below 1.5 eV) amorphous-silicon germanium alloys (a-SiGe:H) grown by hot-wire chemical vapor deposition (HWCVD) by lowering the substrate temperature and deposition rate. Prior to this work, we were unable to grow a-SiGe:H alloys with bandgaps below 1.5 eV that had photo-to-dark conductivity ratios comparable with our plasma-enhanced CVD (PECVD) grown materials [B.P. Nelson et al., Mater. Res. Soc. Symp. 507 (1998) 447]. Decreasing the filament diameter from our standard configuration of 0.5 mm to 0.38 or 0.25 mm provides first big improvements in the photoresponse of these alloys. Lowering the substrate temperature from our previous optimal temperatures (T_sub starting at 435 °C) to at 250 °C provides additional photo-to-dark conductivity ratio increasing by two orders of magnitude for growth conditions containing 20–30% GeH₄ in the gas phase (relative to the total GeH₄+SiH₄ flow).