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131.
分析了多线切割机的工作原理、组成结构及其工作过程。介绍了多线切割机的总体控制方案,并对多线切割机的张力控制系统进行深入地理论研究,建立了控制系统的运动学和动力学模型。在此基础上,提出了一种PID速度同步跟随控制方案。试验结果表明,该方案可靠、稳定、控制精度高、调整方便。 相似文献
132.
该文研究了曲面三角网格模型顶点法矢、主曲率和主方向的计算方法,分析了曲面上点的类型,提出了一种基于断裂面匹配的破碎物体拼接方法。分别用曲面上点的有向脚标和无向脚标构成有向特征向量和无向特征向量,在无向特征向量匹配的基础上,经过匹配点方向映射方法判断其它无向特征匹配点对的有向特征向量的相似性,完成断裂面匹配计算。在断裂面匹配的基础上,通过匹配点方向映射实现破碎物体的拼接。实验结果表明该算法可靠地实现了破碎物体的拼接。 相似文献
133.
Nanostructured zinc oxide synthesized using an easy and low temperature chemical bath deposition method are among the most promising low cost semiconducting nanostructures investigated for a variety of applications. We successfully report the effects of ammonia solution in the growth of ZnO nanorods at a temperature of 60 °C. Successive addition of ammonia altered the degree of supersaturation of the growth solution, causing a significant deviation in the morphology and crystal orientation of ZnO nanorods. Field emission scanning Electron Microscopy images revealed changes in surface morphology of ZnO nanorods with respect to addition of specific amounts of ammonia. X-ray diffraction analysis revealed wurtzite crystal structure of ZnO which was further supported by X-ray photoelectron studies, optical absorbance and Raman spectra that also revealed the existence of wurtzite ZnO. The current-voltage measurement showed the electrical properties of the synthesized ZnO nanorods. The vertically grown nanorods with flat tops, effect more rectifying Schottky contacts to be realized on comparison to needle like structures. 相似文献
134.
Hafnium oxide (HfO2) films were deposited on Si substrates with a pre-grown oxide layer using hafnium chloride (HfCl4) source by surface sol-gel process, then ultrathin (HfO2)x(SiO2)1−x films were fabricated due to the reaction of SiO2 layer with HfO2 under the appropriate reaction-anneal treatment. The observation of high-resolution transmission electron microscopy indicates that the ultrathin films show amorphous nature. X-ray photoelectron spectroscopy analyses reveal that surface sol-gel derived ultrathin films are Hf-Si-O alloy instead of HfO2 and pre-grown SiO2 layer, and the composition was Hf0.52Si0.48O2 under 500 °C reaction-anneal. The lowest equivalent oxide thickness (EOT) value of 0.9 nm of film annealed at 500 °C has been obtained with small flatband voltage of −0.31 V. The experimental results indicate that a simple and feasible solution route to fabricate (HfO2)x(SiO2)1−x composite films has been developed by means of combination of surface sol-gel and reaction-anneal treatment. 相似文献
135.
136.
Multicomponent hybrid nanostructures that contain two or more nanometer‐scale components have attracted much attention recently owing to the synergistic properties induced by interactions between these different nanometer‐scale objects. Herein, we give an overview of the efforts to synthesize multicomponent nanoparticles with at least one component being magnetic, and focus on our recent developments. The syntheses are based on heterogeneous nucleation and growth of a second and third component onto seed nanoparticles. These multicomponent nanoparticles show interesting magnetic, magneto‐optical, plasmonic, and semiconducting properties that can be modulated by interfacial interactions between different nanocomponents. This opens up a new avenue to advanced multifunctional nanomaterials for device concepts and applications. 相似文献
137.
Alexander Vladimirov Grigorov 《Microelectronic Engineering》2008,85(11):2290-2298
This paper reports a simple and novel process that allows the fabrication of suspended channel MEMS devices. Two basic types of suspended structures were fabricated using the new process, and a possible functionalization mechanism for bio-analytical detection and sensing using spotting and capillary action was successfully tested.Possible uses of the fabricated structures are described, as specific existing types of biochemical MEMS sensors. 相似文献
138.
139.
M. Gassoumi M.M. Ben SalemS. Saadaoui B. GrimbertJ. Fontaine C. gaquiereH. Maaref 《Microelectronic Engineering》2011,88(4):370-372
In AlGaN/GaN heterostructure field-effect transistors, the surface defects and dislocations may serve as trapping centers and affect the device performance via leakage current. In this paper we report results of our investigation of the trapping characteristics of Al0.25Ga0.75N/GaN HEMT using the Conductance Deep Level Transient Spectroscopy (CDLTS). Two deep level electronic defects were observed labeled E1 and HL1, with activation energies Ea1 = 1.36 eV and Ea2 = 0.63 eV. The hole-trap HL1 is characterized for the first time in our studies. We identified the characteristics of the traps at the AlGaN/GaN interface adjoining the channel and the surface along the ungated region between the gate and the drain, as well as the effects of the surface traps. 相似文献
140.
This paper presents a silicon cantilever sensor based on n-type metal-oxide-semiconductor transistor for chemical sensing and analysis using the chemisorption-induced surface stress sensing principle. The cantilever is along the 〈1 0 0〉 crystal orientation of the (1 0 0) silicon, and the transistor channel is parallel to as well as located at the rear part of the cantilever to obtain high stress sensitivity. The gold film deposited on the bottom surfaces of cantilevers is chemically functionalized with a self-assembled monolayer of 4-mercaptobenzoic acid via the Au-SH covalent bonding. The vapor phase chemical sensing experiments with acetone, ethanol, nitroethane and water vapor as targets are performed. The observed response differentiation implies that the molecular interaction mechanisms between different chemical molecules are different. 相似文献