国内外纯净钢生产先进技术

概述了近年来国内外一些先进炼钢厂的纯净钢生产新技术，分析了碳、硫、磷、氢、氧、氮等元素在钢中的行为和降低钢中杂质元素的相关措施。指出多工序分阶段精炼，大规模经济地生产纯净钢是一种发展趋势。     

金属/Hg1-xMnxTe接触的I-V特性研究

分别采用溅射和蒸发镀膜法在Hg1-xMnxTe试样表面形成了Au/Hg1-xMnxTe和Al/Hg1-xMnxTe接触,并用Aligent4155c I-V测试仪对其I-V特性进行了测量,随后对试样在10%NH4F:10%H2O2:H2O中进行了钝化处理,并对处理后的试样再次进行了I-V测量,对于测试结果用热电子发射-扩散理论进行了分析.结果表明:Au与Hg1-xMnxTe形成了良好的欧姆接触,而Al与Hg1-xMnxTe形成了具有整流特性的肖特基接触,其肖特基势垒的理论推算值为0.38eV.钝化处理后的试样,其表面漏电现象明显降低,Au/Hg1-xMnxTe接触的电流下降幅度在0.1V时最大,为76.1%;而Al/Hg1-xMnxTe接触在0.2V时最大,为93.2%.随着偏压的进一步增大,两种接触的电流减小的幅度都逐渐变小.     

Characteristics and evolution of ore-forming fluids of the Chongjiang copper deposit in the Gangdise porphyry copper belt, Tibet

Petrography, microthermometry, and scanning electron microscope/energy dispersive spectrometer （SEM/EDS） studies were performed on the fluid inclusions in the ore-beating quartz veins and quartz phenocrysts in the porphyry of the Chongjiang porphyry copper deposit. The analyses of the fluid inclusions indicate that the ore-forming fluids were exsolved from magma. They are near-saturated, supercritical, rich in volatile constituents, and have the capture temperature of 362-389℃ and salinities of 17.7wt%- 18.9wt% NaC1 eq. With the decreasing of temperature and pressure, the supercritical fluids were separated into a low salinity vapor phase and a high salinity liquid phase. During quartz-sericitization, the high salinity fluid boiled and separated into a low salinity vapor phase and a high salinity liquid phase. The high salinity inclusions that formed in the boiling process had daughter mineral melting temperatures higher than the homogenization temperatures of the vapor and liquid phases. The late fluids that are responsible for argillization are of lower temperature and salinity.     

超声波-水热法合成Bi2Te3纳米管

以水为反应介质，NaBH4为还原剂，合成了BizTe3纳米管及纳米微粒。溶液首先在超声波发生器中预处理1h，然后置于150℃，水热反应釜中继续反应48h。XRD分析表明：合成产物主要物相为Bi2Te3；SEM观察可见产物中有纳米管生成，纳米管直径约为50-100nm，管壁厚约8-10nm，长度在500nm以上。EDS分析表明：纳米管成份为Bi2Te3。Bi2Te3纳米管可能的生长机制为纳米薄片-卷曲-闭合-纳米管。     

非线性网络有限时间分布式跟踪控制

针对具有本质非线性动态的多智能体网络,基于微分包含理论研究有限时间协调跟踪问题。假设非线性动态满足Lipschitz条件且只有部分智能体已知目标动态,设计分布式混杂控制协议,应用非光滑稳定性分析方法给出系统实现有限时间跟踪的充分条件。若无向切换拓扑保持连通或有向拓扑具有生成树且强连通部分满足细致平衡条件,则选取合适的控制增益参数均能实现有限时间跟踪。最后通过仿真实验表明了所提出方案的有效性和正确性。     

Passivity-based sliding mode control for a polytopic stochastic differential inclusion system

Passivity-based sliding mode control for a polytopic stochastic differential inclusion (PSDI) system is considered. A control law is designed such that the reachability of sliding motion is guaranteed. Moreover, sufficient conditions for mean square asymptotic stability and passivity of sliding mode dynamics are obtained by linear matrix inequalities (LMIs). Finally, two examples are given to illustrate the effectiveness of the proposed method.     

On polytopic inclusions as a modeling framework for systems with time-varying delays

One of the important issues in networked control systems is the appropriate handling of the nonlinearities arising from uncertain time-varying delays. In this paper, using the Cayley-Hamilton theorem, we develop a novel method for creating discrete-time models of linear systems with time-varying input delays based on polytopic inclusions. The proposed method is compared with existing approaches in terms of conservativeness, scalability and suitability for controller synthesis.     

In-Situ monitoring of temperature and alloy composition of Hg1−xCdxTe using FTIR spectroscopic techniques

Optical real-time in-situ sensors play a very important role in the processing of semiconductor devices because of their noncontact remote nature and excellent compatibility with UHV systems. In this work, we report on progress in developing an in-situ temperature sensor for HgCdTe structures grown by molecular beam epitaxy (MBE). Based on the Fourier transform infrared (FTIR) spectrometer, this sensor is capable of continuous real-time monitoring of the surface temperature, thickness and alloy composition of HgCdTe epilayers. The accuracy and sensitivity of this FTIR technique were studied in all temperature ranges of interest. Also compared are two different methods of temperature determination obtained from the normalized spectral radiance. The influence of stray radiation and of sample holder rotation on the measurement accuracy have been studied. Reflectivity spectra for HgCdTe/CdZnTe(211) and HgCdTe/CdTe(211)/Si(211) structures have been analyzed in real time in order to determine the layer thickness and alloy composition for growing layers. Also discussed is a multilayer-structure optical model developed to solve the problem of composition determination at early stages of growth. The application of this model for fitting the transmission spectra is demonstrated.     

Variable temperature hall effect on p-Hg1−xCdxTe grown on CdTe and sapphire substrates by liquid phase epitaxy

Variable temperature Hall effect measurements have been made down to 9–10K on p-type Hg_1−xCd_xTe grown by liquid phase epitaxy on both CdTe and sapphire substrates. Carrier freeze-out was usually observed throughout the measured temperature range. For most samples, the hole mobility was well-behaved and exhibited a maximum at ˜ 35K. Values of acceptor ionization energy E_A and donor concentration N_D were estimated from the data, using a model assuming significant compensation, which provided a good fit to the low temperature data. In addition, values of N_D were also estimated from an analysis of the low temperature mobility using the hole effective mass as a parameter to provide reasonable agreement between the N_D values calculated from the Hall coefficient and mobility data. The measured carrier concentration is a result of close compensation between stoichiometric acceptors and donors, with N_D usually in the low-10¹⁷ cm⁻³ range. Average values of E_A for as-grown, undoped x = 0.32 layers on CdTe and sapphire substrates are 7.4 and 6.6 meV, respectively. An activation energy of 0.84 meV was determined for a Cu-doped x = 0.32 layer that was annealed in Hg vapor to reduce the number of Hg vacancies. The average E_A for undoped Hg-annealed x = 0.22 layers on CdTe substrates is 2.35 meV. Layers with x = 0.32 grown on sapphire substrates have average carrier concentrations of 2.92 (σ = 0.54) × 10¹⁶ cm⁻³, compared with 4.64 (θ = 1.26) × 10¹⁶ cm⁻³ for the same composition layers grown on CdTe substrates.