长延迟反射栅色散延迟线

本文报道了用于电子对抗系统的表面波反射栅色散延迟线的制作情况。器件采用离子束刻蚀沟槽栅的制作工艺,整个刻蚀过程由计算机控制,制作出的器件其主要性能参数为:展宽线中心频率80MHz,色散时间126μs,色散带宽21MHz,插入损耗37dB;压缩线中心频率28MHz,色散时间63μs,色散带宽10.5MHz,插入损耗43dB;配对压缩后,旁瓣抑制可达34—36dB。     

热场致发射电子源曝光系统的技术现状和应用前景

高亮度、长寿命的热场致发射(Thermal field emitter)阴极自七十年代中期已受到人们的关注和重视,历经十多年在理论分析、工艺制备和实验研究上做了大量工作之后,于1988年在电子束曝光机上的应用中取得了突破性进展。用晶向为(100)的钨和具有低逸出功的锆制成的(Zr/O/W)热场致发射阴极在四千小时的使用寿命下亮度值超过六硼化镧阴极一个数量级以上,最近的实验结果表明:在工件台上小束斑下能得到接近两千安培每平方厘米的束流密度,而且四十小时内束流稳定度接近千分之一。显然,这几个表征曝光系统综合技术性能的重要指标,说明多年困扰于各种电子束曝光系统(特别是高斯圆斑电子束系统)在高分辨率情况下生产率较低的技术难题已经得到了比较圆满的解决。 八十年代末期,当热场致发射电子源曝光系统的技术关键解决后,这项技术就成为技术发达国家,特别是美国和日本,在电子束曝光领域进行技术竞争的热点;九一年五月底在美国召开的国际三束会议上有关场致发射阴极和MEBES—4型机已经采用TFE的最新报道充分证实了这项技术在电子束曝光技术应用中的重要地位和发展潜力。     

互阻抗精度对实现天线极低副瓣的限制

实现极低副瓣阵列天线需要作精确的互耦补偿.如果阵列的互阻抗(或互耦系数)矩阵确知,理论上可以精确补偿互耦的影响,从而实现极低副瓣接收。但无论是计算还是测量得到的互阻抗矩阵都只有一定的精度,这个精度最终决定了补偿效果。本文研究了极低副瓣阵列天线中互耦补偿对互阻抗精度的要求;推导出了互阻抗误差与通道幅相误差的关系;进而得到了互阻抗误差与副瓣电平的关系。     

热晕及其相位补偿数值模拟与定标规律研究

本文对激光通过大气传输引起的热晕进行数值模拟，并采用相位补偿的方法对热晕进行校正，从计算结果中得到经过相位补偿后，光束质量有较好的改善，Ｓｔｒｅｈｌ比有所提高。从模拟结果中还总结出补偿后的热晕 定标规律公式，发现热晕经补偿后的功率阈值提高３倍以上。     

Interface structure in arsenide/phosphide heterostructun grown by gas-source MBE and low-pressure MOVPE

We have used cross-sectional scanning tunneling microscopy (STM) to study interface structure in arsenide/phosphide heterostructures grown by gas-source molecular beam epitaxy (GSMBE) and by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). High-resolution images of GSMBE samples consisting of GaAs interrupted at 200Å intervals with a 40 s P₂ flux reveal substantial, growth-temperature-dependent incorporation of phosphorus with nanometer-scale lateral variations in interface structure. STM images of InGaAs/InP multiple quantum well structures grown by LP-MOVPE show evidence of interface asymmetry and extensive atomic cross-incorporation at the interfaces. Data obtained by STM have been corroborated by high-resolution x-ray diffraction and reflection high-energy electron diffraction. Together, these studies provide direct information about nanometer-scale grading and lateral nonuniformity of arsenide/phosphide interfaces that can occur under these growth conditions.     

Strain effects in CdTe (111) epitaxial layers grown on GaAs (100) substrates by molecular beam epitaxy

Spectroscopic ellipsometry and photoreflectance measurements on CdTe/GaAs strained heterostructures grown by moleculclr beam epitaxy were carried out to investigate the effect of the strain and the dependence of the lattice parameter on the CdTe epitaxial layer thicknesses. Compressive strains exist in CdTe layers thinner than 2 μm. As the strain increases, the value of the critical-point energy shift increases linearly. These results indicate that the strains in the CdTe layers grown on GaAs substrates are strongly dependent on the CdTe layer thickness. Author to whom all correspondence should be addressed.     

Spectroscopic ellipsometry for monitoring and control of molecular beam epitaxially grown HgCdTe heterostructures

A systematic study of the effect of measurement perturbation on in situ monitoring of the composition of molecular beam epitaxially (MBE) grown Hg_1−xCd_xTe using spectroscopic ellipsometry was carried out. Of the five variables investigated, which included angle of incidence, wavelength of the light beam, modulator rotation, analyzer rotation, and modulator amplitude, the angle of incidence and the modulator rotation had the strongest effect on the in situ Hg_1−xCd_xTe composition monitoring process. A wobble-free sample manipulator was installed to reduce the impact of these two variables. With these improvements, the spectroscopic ellipsometer is now routinely used to monitor Hg _1−xCd_xTe compositions during MBE growth of heterostructures and is a useful tool in diagnosing growth-related problems. Examples are included for both application areas, that include the control of the interface between Hg_1−xCd_xTe layers of different compositions, i.e. device engineering.     

Strain relaxation in silicon ion molecular beam epitaxy on silicon (001) substrates during aging

Silicon strained epitaxial films were grown on Si (001) substrates by low energy ion beam assisted molecular beam epitaxy. Films grown in the range of 450– 550°C with concurrent Ar⁺ ion bombardment (100 eV) were characterized using x-ray diffraction and transmission electron microscopy and found to be disloca-tion free and ununiformly strained. During aging, the strained layers stay stable until 500°C. Relaxation of most of the strain occurred at temperatures of 500-650°C. At higher aging temperatures, the strained layers relaxed by the formation of dense dislocation structures.     

Selective area epitaxy of CdTe

We have performed selective area epitaxy (SAE) of CdTe layers grown by molecular beam epitaxy using a shadow mask technique. This technique was chosen over other SAE techniques due to its simplicity and its compatibility with multiple SAE patterning steps. Features as small as 50 microns × 50 microns were obtained with sharp, abrupt side walls and flat mesa tops. Separations between mesas as small as 20 microns were also obtained. Shadowing effects due to the finite thickness of the mask were reduced by placing the CdTe source in a near normal incidence position. Intimate contact between the mask and the substrate was essential in order to achieve good pattern definition.     

均匀介质中麦克斯韦方程的无衍射解

在均匀等离子体中麦克斯韦方程的一个严格积分解的基础上给出了若干不同形式的初始光波在其中演化的严格解，包括熟知的平面波解，著名的无衍射波解和三维空间中的球对称无衍射波解。作为一种群速度为零的光束，三维无衍射波的行为是令人惊讶的