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1.
Hot-dip galvanizing is a standard technology to produce coated steel strips. The primary objective of the galvanizing process is to establish a homogeneous zinc layer with a defined thickness. One condition to achieve this objective is a uniform transverse distance between the strip and the gas wiping dies, which blow off excessive liquid zinc. Therefore, a flat strip profile at the gas wiping dies is required. However, strips processed in such plants often exhibit residual curvatures which entail unknown flatness defects of the strip. Such flatness defects cause non-uniform air gaps and hence an inhomogeneous zinc coating thickness. Modern hot-dip galvanizing lines often use electromagnets to control the transverse strip profile near the gas wiping dies. Typically, the control algorithms ensure a flat strip profile at the electromagnets because the sensors for the transverse strip displacement are also located at this position and it is unfeasible to mount displacement sensors directly at the gas wiping dies. This brings along that in general a flatness defect remains at the gas wiping dies, which in turn entails a suboptimal coating.In this paper, a model-based method for a feedforward control of the strip profile at the position of the gas wiping dies is developed. This method is based on a plate model of the axially moving strip that takes into account the flatness defects in the strip. First, an estimator of the flatness defects is developed and validated for various test strips and settings of the plant. Using the validated mathematical model, a simulation study is performed to compare the state-of-the-art control approach (flat strip profile at the electromagnets) with the optimization-based feedforward controller (flat strip profile at the gas wiping dies) proposed in this paper. Moreover, the influence of the distance between the gas wiping dies and the electromagnets is investigated in detail. 相似文献
2.
Aluminum-doped zinc oxide (ZnO:Al, AZO) electrodes were covered with very thin (∼6 nm) Zn1−xMgxO:Al (AMZO) layers grown by atomic layer deposition. They were tested as hole blocking/electron injecting contacts to organic semiconductors. Depending on the ALD growth conditions, the magnesium content at the film surface varied from x = 0 to x = 0.6. Magnesium was present only at the ZnO:Al surface and subsurface regions and did not diffuse into deeper parts of the layer. The work function of the AZO/AMZO (x = 0.3) film was 3.4 eV (based on the ultraviolet photoelectron spectroscopy). To investigate carrier injection properties of such contacts, single layer organic structures with either pentacene or 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine layers were prepared. Deposition of the AMZO layers with x = 0.3 resulted in a decrease of the reverse currents by 1–2 orders of magnitude and an improvement of the diode rectification. The AMZO layer improved hole blocking/electron injecting properties of the AZO electrodes. The analysis of the current-voltage characteristics by a differential approach revealed a richer injection and recombination mechanisms in the structures containing the additional AMZO layer. Among those mechanisms, monomolecular, bimolecular and superhigh injection were identified. 相似文献
3.
豫西熊耳山雷门沟钼矿床位于东秦岭多金属成矿带东段,是已探明的超大型斑岩型钼矿,前人研究程度高、地质成果丰硕,但对矿床开采技术条件方面研究较少。本次通过地质调查工程、水文地质试验等方法,从水文地质角度,对雷门沟钼矿床水文地质条件进行研究,填补了该方面的空白,丰富了研究成果;采用水文地质比拟法预测未来矿坑最大排水量2613 m3/d,经实践检验结果较为可靠;总结的采坑排水量预测方法、含水层特点、矿床充水因素以及防治水措施,以期对该区域水文地质工作具有参考价值。 相似文献
4.
Undoped and fluorine doped ZnO thin films were deposited onto glass substrates using successive ionic layer adsorption and reaction (SILAR) technique and then annealed at 350 °C in vacuum ambience. The F doping level was varied from 0 to 15 at% in steps of 5 at%. The XRD analysis showed that all the films are polycrystalline with hexagonal wurtzite structure and preferentially oriented along the (002) plane. Crystallite sizes were found to increase when 5 at% of F is doped and then decreased with further doping. It was seen from the SEM images that the doping causes remarkable changes in the surface morphology and the annealing treatment results in well-defined grains with an improvement in the grain size irrespective of doping level. All the films exhibit good transparency (>70%) after vacuum annealing. Electrical resistivity of the film was found to be minimum (1.32×10−3 Ω cm) when the fluorine doping level was 5 at%. 相似文献
5.
Wax deposit properties are a significant concern in pipeline pigging during waxy crude oil transportation. In the present work, the impacts of flow conditions and oil properties on the wax precipitation characteristics of wax deposits are investigated. A flow loop apparatus was developed to conduct wax deposition experiments using four crude oils collected from different field pipes. The differential scanning calorimetry (DSC) technique was employed to observe the wax precipitation characteristics of crude oil and wax deposit. The results show that the wax content and the wax appearance temperature (WAT) of the deposits increase with shear stress and radial temperature gradient, and decrease with radial wax molecule concentration gradient near the pipe wall. The DSC tests on the wax deposits revealed that the deposit wax content is strongly correlated to the oil wax content. Furthermore, an empirical correlation was developed to predict the wax content and the WAT of the wax deposit. Verification of the empirical correlation using the different oils indicated that the average relative error of the wax content prediction and average absolute error of WAT prediction were 13.2% and 3.6°C, respectively. 相似文献
6.
This paper presents two well-instrumented large-scale field tests of PVD-improved soft soil with vacuum and surcharge preloading, respectively. The two large-scale field tests were conducted adjacent to each other with the same preload. A comparative analysis was performed to investigate the performance of subsoil (i.e., the ground settlement, the layered settlement, the lateral displacement of subsoil and pore water pressure) under vacuum preloading and equivalent surcharge preloading. Some design methods were verified based on the field data. Cone Penetration Tests (CPT) and Vane Shear Tests (VST) were conducted to assess the improvement effects on subsoil after preloading. The results showed that as compared with surcharge preloading, vacuum preloading mitigated the differential settlement of the ground. The vacuum pressure transmitted into the soil with a minor loss through the PVD length. From a practical point of view, the improvement effects by vacuum preloading and surcharge preloading were similar in terms of influence depth and soil strength based on the in-situ tests. 相似文献
7.
An efficient method for preparation of semiconductor quantum rod films for robust lasing in a cylindrical microcavity is reported. A capillary tube, serving as the laser cavity, is filled with a solution of nanocrystals and irradiated with a series of intense nanosecond laser pulses to produce a nanocrystal film on the capillary surface. The films exhibit intense room‐temperature lasing in whispering‐gallery modes that develop at the film–capillary interface as corroborated from the spacing detected for the lasing modes. Good lasing stability is observed at moderate pump powers. The method was applied successfully to several quantum‐rod samples of various sizes. 相似文献
8.
9.
The c-axis preferred orientation of ZnO film is the most important factor for its successful application in piezoelectric devices. The effects of surface roughness of the substrate on the c-axis preferred orientation of ZnO thin films, deposited by radio frequency magnetron sputtering, were investigated. During sputtering, the oxygen content in the argon environment used was varied from 0 to 70% at a total sputtering pressure of 10 mTorr. Very smooth Si, smooth evaporated Au/Si, smooth evaporated-Al/Si, and rough sputtered-Al/Si were used as substrates. Their r.m.s. roughnesses, as measured by atomic force microscopy, were 1.27, 17.1, 21.1 and 65-118 Å, respectively. The crystalline structure and the angular spread of the (0 0* 2) plane normal to the ZnO films were determined using X-ray diffraction and X-ray rocking curves, respectively. The crystallinity and the preferred c-axis orientation of the ZnO films were strongly dependent on the surface roughness of the substrates rather than on the oxygen content of the working environment or on the chemical nature of the substrate. 相似文献
10.