Improving Short-Circuit Current Capacity, Resistance, and Breaking Load of OPGW Constructions by Modifying Aluminium Alloy With AlB2

This article presents a method that can be applied to molten AA-6101 alloy to improve electrical properties of the aluminium part of the optical ground wire (OPGW) used in overhead transmission lines to protect phase conductors from lightning strike and to transmit signals and data. AA-6101 alloy in casting of the log as 6 m length and 178 mm diameter for extrusion has been inoculated by AlB₂ to decrease detrimental effects of Cr, Ti, V, and Zr on the conductivity of the material. After inoculation, improved billets were extruded as 9.5 mm diameter feedstock. Required wires drawn from the feedstock according to the construction types of OPGW to be tested were exposed to aging at 175°C, 6 h (T-8). Upon completion of the back-twist and performing-type stranding process, resistance, and short-circuit current capacity and breaking load of the OPGW 88/44 constructions with other metal combinations have been examined and tested to show improvement. Results are summarized in tables and graphically.     

Al-10Mg型固溶合金自然时效稳定性研究

测定了ZL30 5合金自然时效 33年的力学性能变化 ,观察了晶界的析出相 ,研究了组织和性能的关系 ,从而确定了ZL30 5合金具有长期自然时效稳定性。     

PECVD法低温沉积多晶硅薄膜的研究

在玻璃衬底上采用常规的PKCVD法在低温(≤400℃)条件下制得大颗较(直径＞100nm)、择优取向(220)明显的多晶硅薄膜。选用的反应气体为SiF4和H2混合气体。加入少量的SiH4后，沉积速率提高了近10倍。分析认为，在低温时促使多晶硅结构形成的反应基元应是SiFmHn(m n≤3)，而不可能是SiHn(n≤3)基团。     

High resistivity measurement of SiC wafers using different techniques

To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer was also obtained and reported in this work.     

Effect of Stoichiometry on Properties of Rare-Earth-Based Hydrogen Storage Alloy for Nickel-Metal Hydride Secondary Battery

Effect of stoichiometry on microstructures, electrochemical properties and PCT characteristics of the alloys MI(Ni0.71Co0.15-Al0.06Mn0.08)x (MI=Lanthanum-rich Michmetal, x=4.6~5.2) have been investigated. The lattice constants a, c, and cellvolumes of non-stoichiometric alloys are bigger than those of the stoichiometric alloy. With the increasing stoichiometry x,the value of a decreases, and the value of c and cell volume increases except for those of the stoichiometric alloy; the plateaupressure of PCT curve, discharge capacity and cycling stability all increase. The alloy with x=5.2 shows the highest dischargecapacity and the best cycling stability among the studied alloys.     

基于SOI的双极场效应晶体管

在分析了双极型晶体管和场效应晶体管各自的特点和不足后，介绍了一种既具有双极型晶体管较大电流容量和功率输出，又具有场效应晶体管高输入阻抗的电子器件——双极MOS场效应晶体管(BJMOSFET)，同时指出体硅BJMOSFET的阳极扩散区与衬底之间存在较大的漏电流，可产生较大的寄生效应。提出了一种新型固体电子器件——基于SOI的BJMOSFET，分析了其工作原理j与体硅BJMOSFET比较，由于SOI技术完整的介质隔离避免了体硅器件中存在的大部分寄生效应，使基于SOI的BJMOSFET在体效应、热载流子效应、寄生电容、短沟道效应和闩锁效应等方面具有更优良的特性。     

机械合金化Fe-Ni粉末的相结构

使用XRD和Moessbauer等方法，研究了在Ar气氛下机械合金化Fe—Ni粉末相结构的变化．结果表明，在机械合金化Fe64-Ni36粉末过程中，fcc相的数量随着球磨时间的增加先增加然后减少，与加乙醇球磨Fe64-Ni36的情形相同．当Ni的含量(原子分数)大于50％时，有fcc相、顺磁相和FeNi3形成，当Ni的含量低于50％时，bcc相的数量随着Ni含量减少而增加．Moessbauer谱的结果表明，因球磨时间或Fe、Ni比例的不同，Fe—Ni球磨粉末固溶体具有不同结构的原子配比。     

大块非晶合金的性能、制备及应用

综述了大块非晶合金的性能、制备方法及应用，对比了吸铸法制备的棒状Zr41.2Ti13.8Cu12.5Ni10Be22.5,Zr57Cu20Al10Ni8Ti5,Zr52.5Ti5Cu17.9Ni14.6Al10(原子分数)大块非晶样品的过冷温度区间宽度(△Tx)，给出了3种大块非晶合金系列的热稳定性参数Tg、Tx及△Tx，提出了大块非晶合金领域存在的问题及发展方向．     

铝薄膜CMP影响因素分析

提出了在碱性抛光液中铝薄膜化学机械抛光的机理模型,对抛光液的pH值、磨料、氧化剂浓度对过程参数的影响做了一些试验分析。试验结果表面粗糙度的铝薄膜所需的最优化CMP过程参数:硅溶胶粒径为15～20nm,pH值为10.8～11.2,氧化剂浓度为2.5%～3%。     

砂岩酸化中水化硅沉淀的影响因素分析

讨论了砂岩酸化中产生水化硅沉淀的反应机理。使高岭土与1.0%HF和多种配比的HCl HF在不同温度(20-90℃)反应不同时间(10-300分钟),用等离子吸收光谱法(ICP)测定酸液中可溶性硅的浓度(mg/L),取某时段测定值的减小量为该时段水化硅沉淀生成量,讨论了多种因素的影响,得到了如下结果和结论。反应温度越高,则高岭土与HF之间的反应越快,形成水化硅沉淀的时间越短,最终生成的沉淀量越大;在HF中加入HCl(使用土酸体系)、减小土酸中HF质量分数、加大土酸中HCl、HF质量分数比,均可使生成沉淀时间延后,使最终生成沉淀量减少。60℃时300分钟沉淀量,在1.0%HF、5.0%HCl 1.0%HF、9.0%HCl 1.0%HF中分别为482、321、201mg/L。提出了在酸化设计与施工中可以采取的6条简便易行的减少水化硅沉淀量的措施。图4表1参6。