一种能有效抑制背光照影响的非晶硅薄膜晶体管

提出了一种能有效抑制背光照影响的非晶硅薄膜晶体管结构。详细地分析了源、漏电极接触区和沟通区内载流子的输运特性。论述了在背光照射下,这种结构的ＴＦＴ能有铲抑制关态电流上升的机理。研究了有源层ａ－Ｓｉ：Ｈ膜层厚度对ＴＦＴ关态电流和开态电流的影响。检测辽种结构ＴＦＴ在暗态和背照射下的静态特性。     

非晶态As2S8半导体薄膜波导的热处理效应

研究了非晶态As2S8半导体薄膜在热作用下的结构变化效应.采用棱镜耦合技术、喇曼光谱测试技术,确认了As2S8薄膜经热处理后,薄膜密度增高和折射率增大的现象.实验表明,淀积态非晶As2S8半导体薄膜经紫外光饱和照射后,再经退火处理,当光折变在退火温度不低于160℃时,出现不完全可逆现象,可逆程度跟退火温度有关.实验显示,退火态非晶As2S8半导体薄膜在玻璃转化温度130℃时退火处理,光折变存在完全可逆现象.光传输实验显示,热处理后的非晶态As2S8半导体薄膜波导,其传输损耗减小了约4dB/cm.     

Structural and Optical Properties of ZnO Nanotips Grown on GaN Using Metalorganic Chemical Vapor Deposition

ZnO nanotips are grown on epitaxial GaN/c-sapphire templates by metalorganic chemical vapor deposition. X-ray diffraction (XRD) studies indicate that the epitaxial relationship between ZnO nanotips and the GaN layer is (0002)ZnO||(0002)GaN and (101̄0)ZnO||(101̄0)GaN. Temperature-dependent photoluminescence (PL) spectra have been measured. Sharp free exciton and donor-bound exciton peaks are observed at 4.4 K with photon energies of 3.380 eV, 3.369 eV, and 3.364 eV, confirming high optical quality of ZnO nanotips. Free exciton emission dominates at temperatures above 50 K. The thermal dissociation of these bound excitons forms free excitons and neutral donors. The thermal activation energies of the bound excitons at 3.369 eV and 3.364 eV are 11 meV and 16 meV, respectively. Temperature-dependent free A exciton peak emission is fitted to the Varshni’s equation to study the variation of energy bandgap versus temperature.     

非晶态Fe_(75)Cr_5P_(13)C_7合金粉末的耐蚀性研究

非晶合金性能的研究主要集中在磁性和机械性能方面,相比之下耐腐蚀等化学性能的研究较少。本文讨论的耐蚀非晶态Fe_(75)Cr_5P_(13)C_7合金粉末是采用工艺简单,成本低廉的内旋转溶液方法制的。在粉末中加入适量的粘结剂,压制成型,得到块体材料,研究其耐蚀性能。     

铁基非晶合金局部晶化过程中的矫顽力拐折现象

本文研究了铁基非晶合金在局部晶化过程中矫顽力的变化,观察到等温退火时矫顽力的拐折现象,并用析出相粒子由单畴转变为多畴加以说明.计算得到的理论曲线与实验曲线的特征相符.     

Au-Si非晶态合金的恒温相变

用电阻测定及X射线衍射法研究了共晶成分Au-Si合金快速凝固箔带在等温时效时的相变过程,提出了由非晶态至平衡态的四阶段转变顺序,分析了各亚稳相的结构和电子浓度特征,说明在等温时效过程中亦可生成Hume-Rothery电子化合物及尺寸因素化合物。     

应用置换反应制备高效SERS活性基底研究

利用预处理的铝片和铜片还原硝酸银溶液的方法获得了具有不同表面形貌的银纳米结构.扫描电子显微镜(SEM)图表明反应产物分别为花样和树枝状的银纳米结构.以对羟基苯甲酸(PHBA)作为探针分子,对这种新体系的表面增强拉曼散射(SERS)活性进行了研究,发现该体系是一种非常高效的SERS活性增强基底,并且其SERS活性优于用化学方法制备的银胶.本文对这种新型SERS活性基底的增强机制进行了讨论.     

无机相变信息存储材料研究新进展

硫族化合物合金GeSbTe(GST)和AgInSbTe等相变材料(PCM)已经在光存储技术中得到广泛的应用,用相变电存储器件作为闪存的替代产品已成为国内外研究的热点.与此同时,相变材料在一些领域也取得了新的应用.总结了近年来国内外在相变材料的存储机制、光/电存储性能的改进以及新应用等方面的最新研究成果,并展望了相变材料的研究前景.     

Characterization of amorphous Ni-Si binary alloy films by flash evaporation

We previously reported on an extremely small temperature coefficient of resistivity (TCR) of thin amorphous Ni-Si film resistors fabricated by new flash evaporating method, which have a wide range of resistivity.¹ In the present paper, we describe the structural and chemical properties of these films for the purpose of clarifying the cause of resistive change of films resulting from heat treatment. X-ray diffraction patterns show that Ni-Si films with greater than 20 wt.% Si remains predominantly amorphous after heat treatment. Changes in composition and binding energy of the films resulting from heat treatment are measured by means of XPS. Electrical characteristics are also investigated as a function of Si concentration and temperature. The resistance variations resulting from heat treatment are found to originate from a structural change. The activation energy needed for this change is obtained by analyzing the extent of change during isothermal heating and found to vary from 1 eV to 2.5 eV with increasing Si content from 20 wt.% to 80 wt.%.