激光扫描共焦荧光显微镜的电子控制系统研究

介绍了激光扫描共焦荧光显微镜的电子控制系统，为了提高激光扫描器的定位精度，在系统中提出采用基于闭环象素时钟发生器的检流计振镜所固有的扫描非线性失真补偿方案，减少输出图象的枕形畸变，实现行扫描空间位置的均匀性。在以细分梯形波电流驱动反应式步进电机情况下，根据实测θｉ曲线，用反插法求得与步进电机运行非均匀性相补偿的相电流波，从而获得在小电流情况下高角度均匀的步进电机细分运行特性。     

Effective lightning protection schemes for distribution line

The causes of lightning outage are subdivided into direct lightning strokes and induced lightning strokes, which are identified by the characteristics of the lightning overvoltage. In the past, lightning protection devices were directed mainly toward the latter, and attention has been focused on the installation of lightning protection devices, ground wires, and reinforcement of insulators. However, lightning outages continue to occur. Thus it is extremely important to clarify the fault characteristics of lightning surges and to study the effectiveness of various lightning protection devices by considering both direct lightning stroke and induced lightning stroke in order to prevent lightning outage in the future. In this research, the electromagnetic transients program (EMTP) has been applied to the direct lightning stroke, and the induced lightning outage analysis program for multiple conductor systems has been applied to the induced lightning stroke to study the effectiveness of lightning protection devices provided by combination of various lightning protection devices. The most effective lightning protection schemes are analyzed and evaluated based on verification tests on the full scale models as well as economic considerations.     

CIMS装配和拆卸生产线的可靠性分析

本文对ＣＩＭＳ装配线和拆卸线的可靠性问题进行研究。文中分析了它们的运行状况，求出了两种生产线的稳态可用度，并用一个例子加以说明。     

非串行生产线的建模,分析及设计

本文利用等效工作站理论和工件流平衡原理，推导出非串行离散事件生产线可以等价于串联系统，并归结为装配和拆卸两条定理，解决了系统的建模、分析与设计问题。     

200 万t链箅机-回转窑球团生产线快速达产实践

介绍了邯钢200万t链箅机-回转窑酸性氧化球团生产线的工艺特点和主要设备,以及建成投产后试生产的有关情况。通过周密的部署和安排,该生产线实现了40天快速达产的目标。     

中频反应溅射SiO2膜与直流溅射ITO膜的在线联镀

多数ITO透明导电玻璃生产线在实现SiO2膜与ITO膜在线联镀时，应用SiO2靶射频溅射沉积SiO2膜工艺和ITO靶直流溅射沉积ITO膜工艺，如果SiO2膜应用硅靶反应磁控溅射工艺，存在这种工艺是否可以与ITO靶直流溅射沉积ITO膜工艺在线联用以及如何实现联用的问题。作者对现有的生产线进行了改造设计、加工，做了大量实验、质谱分析和多项测试研究，成功地实现反应溅射SiO2膜与ITO膜在线联镀，做到SiO2镀膜室的工作状态的变化基本上不影响ITO镀膜室的工艺条件。     

Signed line intercept count

Elements of surfaces that bound a phase (β) in a two phase mixture (α+β) may be classified as: (a) convex (++) if both principal curvatures are positive; (b) concave (? ?) if both are negative; and (c) saddle (+ ?) if one is positive and the other negative. This classification excludes the limiting cases for which one or both of the principal curvatures is zero. The traces of these surfaces that form the boundaries of the β areas on a representative two dimensional section may also be: (a) convex (+) if the local curvature is positive; or (b) concave (?) if it is negative. Line intercepts may be tabulated separately for intersections with convex (+) and concave (?) segments of boundary. This paper presents a derivation of fundamental stereological formulae that relate these counting measurements to three-dimensional geometric properties of the structure they sample.     

隔河岩水电厂220 kV线路保护配置及运行分析

介绍了隔河岩电厂220kV线路保护的原理设计及运行情况，以及采用了双重微机化继电保护装置后带来的优越性，简要描述了CSL-101A高频保护和RCS-931A光纤保护的应用特点。     

高炉冷却壁失效原因研究

本文针对安钢高炉冷却壁破损的形式、原因进行研究分析,探讨了冷却壁的结构、材质、加工与安装工艺对其寿命的影响。介绍了安钢高炉炉役后期冷却壁的维护生产实践。     

Extracting Electron Densities in N-Type GaAs From Raman Spectra: Theory

In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q²/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations.