一种基于矩阵度量的缺陷管理流程的改进与实践

本文在分析软件过程中缺陷类型、缺陷注入、缺陷识别的基础上,对传统缺陷管理流程进行改进,增加了缺陷排除有效性的度量方法;然后提出一种实用的软件缺陷管理流程,建立了一个以软件缺陷生命周期为基础的度量模型,并给出了相应的缺陷矩阵度量方法;最后把该缺陷管理流程和度量方法应用在某公司的两个软件项目中,对各阶段的缺陷进行了度量,经实践和数据分析得出,运用此缺陷管理流程和度量方法可以为开发团队设定具体阶段目标和质量计划提供数据基础,为过程控制、过程评价、持续改进等提供量化管理的基础,表明本文改进后的缺陷管理流程和度量方法模型是有效的。     

缺陷需求分析与管理模型

需求管理是软件过程改进的重要活动,需求缺陷管理是需求管理的重要组成部分,其目的在于检测、分析、解决和预防需求缺陷.从社会因素和技术因素两大方面分析了需求工程阶段缺陷产生的原因,对缺陷进行了分类.建立了需求(模型)缺陷列表、缺陷需求分析模型和基于需求缺陷管理的需求过程模型.指出需求缺陷列表所反映的需求分析过程的数量特征,能够为评估需求工程师能力、准确和全面地定义需求成熟度、研究需求演化波及效应、研究需求模型复杂度和需求缺陷分布规律提供必要数据和有益启示.     

地磁场在缺陷微磁检测中的作用分析

地磁场在缺陷微磁检测中的作用是实现微磁检测定量化的理论基础;通过微磁学理论分析地磁场反复磁化铁磁性物质的物理过程,由于磁畴壁的移动,在缺陷区产生固定磁畴结点,固定磁畴结点内的磁场在缺陷处发生泄漏,形成可识别的缺陷信号,固定磁畴结点一旦产生其磁场强度远大于地磁场,地磁场对缺陷微磁检测的影响只会改变检测信号的幅值,不会改变缺陷信号的特征,揭示了缺陷磁场失而复得的原因,同时实验验证了地磁场在应力致磁效应中起到偏置磁场的作用,为在役设备微磁检测奠定了理论基础。     

基于DSP的磁性材料缺陷在线监测系统

在工业制造中,常常需要对磁性材料表面质量进行检测;目前,这种检测仍然采用目视检测手段,既费时费力,又容易漏检,检测结果可靠性差;针对目前国内磁性材料缺陷检测方法比较落后、检测效果较差的情况.设计了一套基于DSP的嵌入式磁性材料表面缺陷的识别与在线检测系统,利用图像处理技术,应用模式识别方法和DSP高速处理能力实现快速无接触测量与分检;经过运行检验表明,该系统能够实时高速地采集和处理图像数据,符合系统对实时性和测量精度的要求.     

基于支持向量机的纸张缺陷图像分类识别

根据支持向量机（SVM）在小样本、高维模式分类中具有的优良分类性能,提出将支持向量机应用于实际的纸张缺陷分类。针对三种现场易出现的缺陷,通过对缺陷图像进行预处理、特征选择,再利用SVM进行分类,利用交叉验证进行参数和模型选取,取得了较好的分类效果,为纸张缺陷的分类指出一种可行的方法。     

基于多源融合的油纸绝缘套管缺陷辨识及绝缘状态评估

油浸纸绝缘套管作为变压器的关键组件,其绝缘受损会威胁变压器主设备的运行安全。针对此现状,提出一种基于多源融合的油纸绝缘套管缺陷辨识及绝缘状态评估方法。首先,根据实际运行工况制备典型缺陷试验套管,并开展频域介电响应、局部放电及红外热成像联合试验,辨识套管缺陷种类。然后,提取套管绝缘指标量,引入隶属度函数及状态得分算子,建立基于博弈论组合赋权法的套管绝缘状态评估模型。最后,分别采用组合赋权法和单一赋权法的评估模型,对正常以及缺陷套管进行算例分析。结果表明：联合试验可以准确辨识套管缺陷种类。组合赋权法弥补了单一赋权法评估结果片面的不足,且正常套管的模型评估分数均高于缺陷套管。评估结果与套管实际绝缘状态一致,验证了套管绝缘状态评估模型的正确性及有效性。     

Defect Engineering of MOF-Based Membrane for Gas Separation

Metal–organic frameworks (MOFs) are highly versatile materials that have been identified as promising candidates for membrane-based gas separation applications due to their uniformly narrow pore windows and virtually unlimited structural and chemical features. Defect engineering of MOFs has opened new opportunities for manipulating MOF structures, providing a simple yet efficient approach for enhancing membrane separation. However, the utilization of this strategy to tailor membrane microstructures and enhance separation performance is still in its infancy. Thus, this summary aims to provide a guideline for tailoring defective MOF-based membranes. Recent developments in defect engineering of MOF-based membranes will be discussed, including the synthesis strategies for defective MOFs, the effects of defects on the gas adsorption properties, gas transport mechanisms, and recently reported defective MOF-based membranes. Furthermore, the emerging challenges and future prospects will be outlined. Overall, defect engineering offers an exciting opportunity to improve the performance of MOF-based gas membranes. However, there is still a long way to go to fully understand the influence of defects on MOF properties and optimize the design of MOF-based membranes for specific gas separation applications. Nonetheless, continued research in this field holds great promise for the development of next-generation membrane-based gas separation technologies.     

Origin of Hole-Trapping States in Solution-Processed Copper(I) Thiocyanate and Defect-Healing by I2 Doping

Solution-processed copper(I) thiocyanate (CuSCN) typically exhibits low crystallinity with short-range order; the defects result in a high density of trap states that limit the device's performance. Despite the extensive electronic applications of CuSCN, its defect properties are not understood in detail. Through X-ray absorption spectroscopy, pristine CuSCN prepared from the standard diethyl sulfide-based recipe is found to contain under-coordinated Cu atoms, pointing to the presence of SCN⁻ vacancies. A defect passivation strategy is introduced by adding solid I₂ to the processing solution. At small concentrations, the iodine is found to exist as I⁻ which can substitute for the missing SCN⁻ ligand, effectively healing the defective sites and restoring the coordination around Cu. Computational study results also verify this point. Applying I₂-doped CuSCN as a p-channel in thin-film transistors shows that the hole mobility increases by more than five times at the optimal doping concentration of 0.5 mol.%. Importantly, the on/off current ratio and the subthreshold characteristics also improve as the I₂ doping method leads to the defect-healing effect while avoiding the creation of detrimental impurity states. An analysis of the capacitance-voltage characteristics corroborates that the trap state density is reduced upon I₂ addition.     

A Polymer Defect Passivator for Efficient Hole-Conductor-Free Printable Mesoscopic Perovskite Solar Cells

Due to the low cost and excellent potential for mass production, printable mesoscopic perovskite solar cells (p-MPSCs) have drawn a lot of attention among other device structures. However, the low open-circuit voltage (V_OC) of such devices restricts their power conversion efficiency (PCE). This limitation is brought by the high defect density at perovskite grain boundaries in the mesoporous scaffold, which results in severe nonradiative recombination and is detrimental to the V_OC. To improve the perovskite crystallization process, passivate the perovskite defects, and enhance the PCE, additive engineering is an effective way. Herein, a polymeric Lewis base polysuccinimide (PSI) is added to the perovskite precursor solution as an additive. It improves the perovskite crystallinity and its carbonyl groups strongly coordinate with Pb²⁺, which can effectively passivate defects. Additionally, compared with its monomer, succinimide (SI), PSI serves as a better defect passivator because the long-chained macromolecule can be firmly anchored on those defect sites and form a stronger interaction with perovskite grains. As a result, the champion device has a PCE of 18.84%, and the V_OC rises from 973 to 1030 mV. This study offers a new strategy for fabricating efficient p-MPSCs.     

Multifunctional Organic Potassium Salt Additives as the Efficient Defect Passivator for High-Efficiency and Stable Perovskite Solar Cells

Despite the rapid developments are achieved for perovskite solar cells (PSCs), the existence of various defects in the devices still limits the further enhancement of the power conversion efficiency (PCE) and the long-term stability of devices. Herein, the efficient organic potassium salt (OPS) of para-halogenated phenyl trifluoroborates is presented as the precursor additives to improve the performance of PSCs. Studies have shown that the 4-chlorophenyltrifluoroborate potassium salt (4-ClPTFBK) exhibits the most effective interaction with the perovskite lattice. Strong coordination between  BF₃⁻/halogen in anion and uncoordinated Pb²⁺/halide vacancies, along with the hydrogen bond between F in  BF₃⁻ and H in FA⁺ are observed. Thus, due to the synergistic contribution of the potassium and anionic groups, the high-quality perovskite film with large grain size and low defect density is achieved. As a result, the optimal devices show an enhanced efficiency of 24.50%, much higher than that of the control device (22.63%). Furthermore, the unencapsulated devices present remarkable thermal and long-term stability, maintaining 86% of the initial PCE after thermal test at 80 °C for 1000 h and 95% after storage in the air for 2460 h.