膜分离法回收合成氨弛放气中氢气

介绍了膜分离的原理和应用。实践表明该方法具有效率高、流程简单、操作灵活容易、纯度高和收率高等优点。     

Hydrogen Absorption and Release Behavior in Hydrogen Decrepitation Process of Nd-Fe-B Alloys

The behavior of hydrogen absorption and release in hydrogen decrepitation (HD) process of Nd-Fe-B alloys were investigated. The results reveal that the reactivity and the amount of hydrogen absorption in HD process are related to the surface activity of the alloy so that the fresh and active surface has a higher efficiency. The presence of Nd-rich phase at the grain boundary is an essential factor of the HD activity of the alloy at room temperature. On degassing, hydrogen is released from the HD powder continuously with increasing temperature. And the residual hydrogen is as low as 0.0015% at 1073K, which shows that the hydrogen is almost exhaused. It is feasible to remove the hydrogen from the HD powder by heating treatment at the temperature of 523-723K for 1h prior to the magnetic field forming in order to decrease the harmful effect of hydrogen on the easy axis alignment of HD magnet.     

镁基储氢材料的研究进展

本文回顾和总结了近几十年来，特别是近十年来镁基储氢材料的发展情况，重点综述了机械合金化Mg-Ni2合金体系的研究情况及其近期的进展，从储氢材料成份及配比，制造工艺改进以及材料的组织结构对材料性能的影响等各方面进行一定的分析和归纳，对储氢材料研究中出现的问题以及今后的发展方向都作了探讨。     

半导体激光器用铷D2线光电流谱稳频

本文报导了用铷原子７８００Ａ光电流谱来稳定半导体激光器的工作，在光电流谱线的中部发现了有利于稳频的凹陷，将半导体激光器频率锁定在凹陷的中央，估算的频率稳定度为１ＭＨｚ。     

SiCp/2024复合材料的氢脆敏感性研究

在浸泡、阴极极化、阴极极化同时迭加拉伸变形、添加As₂O₃毒化剂等常见致氢条件下,通过慢应变速率拉伸试验研究了SiC_p/2024复合材料的力学性能,考察了断口形貌.测定了该材料在按几种常用充氢条件充氢后的氢含量.发现虽然强烈阴极极化使材料力学性能下降,但其原因在于阴极极化引起的碱性腐蚀,与氢脆无关.获得了不同于前人研究的新结论:在本文试验条件下SiC_p/2024材料不发生氢脆,也不发生不可逆氢损伤,其原因与该材料难以充入氢有关.     

氩缓冲气体对铯原子共振滤光器特性的影响

铯原子共振滤光器(Cs-ARF)是目前实现蓝绿激光水下通讯的一种关键元件。本文详细研究了不同气压氩缓冲气体对Cs-ARF特性的影响,明显改善了Cs-ARF的响应速率和辐射转换效率。还研究了氮气及不同器件结构对Cs-ARF特性的影响。     

双原子系统中原子非经典特性与光场非经典特性的关联

本文研究了双原子与双模光场相互作用系统中，双原子分崩离析有压缩与双模光场二阶压缩间的对称关系。揭示了原子间关系和光场模间关联的转换特性，并探讨了失谐量，耦和常数对原子非经典特性与光场非经典特性间关联的影响。     

ERD facility for analysis of hydrogen and deuterium in solids

Hydrogen is the lightest element in nature, and so, its detection and quantitative analysis is difficult by the conventional methods utilized for other elements. In the recent years the technique of elastic recoil detection analysis (ERD) using 1–2 MeV He⁺ beam has been developed to quantitatively and simultaneously analyze hydrogen and its isotopes in solids. Such a facility has been set up using the 2 MeV Van-de-Graaff accelerator at IIT Kanpur. It facilitates H and D analysis in a material up to a depth of ∼ 1μm with a detection sensitivity of 0·1 at.% and depth resolution of about 300 ?. The application potential of this setup is illustrated by presenting the results of measurements performed on Al:H:D systems prepared by plasma source ion implantation and highT _c YBCO pellets exposed to humid atmosphere.     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

Selective partial oxidation of light paraffins with hydrogen peroxide on thin-layer supported Nafion-H catalysts

Thin-layer carbon supported Nafion-H catalysts were found to be active and highly selective (S>98%) for the partial oxidation of C₁-C₃ alkanes, in a three phase catalytic membrane reactor (3PCMR), under mild conditions and in the presence of H₂O₂. The influences of the catalyst teflon loading and H₂O₂ concentration on the reaction rate have been evaluated. A reaction pathway, based on the electrophilic hydroxylation of the C-H bond of alkanes with protonated hydrogen peroxide (H₃O ₂ ⁺ ), is discussed.