碲锌镉晶片退火的显微Raman光谱分析

测量了4块不同退火条件处理碲锌镉晶片的显微Raman光谱,观察到了与碲锌镉材料及材料中Te沉积晶格振动相对应的Raman散射峰,发现了位于327 cm-1/332 cm-1的新峰.通过对碲锌镉晶片进行退火处理,有效的消除了Te沉积,比较碲锌镉晶片退火前后的显微Raman光谱,指出327 cm-1/332 cm-1散射峰只可能由来源于类CdTe或类ZnTe的二级声子散射引起,与碲锌镉材料中的Te沉积无关.     

离子注入硅的线源非相干光瞬时退火温度计算

本文利用高温模型,计算了在我们的实验条件下对离子注入硅进行线源非相干光瞬时退火的退火温度,并与实验结果比较,两者符合得较好。     

Highly conductive buried n+ layers in lnp:fe created by MeV energy Si,S, and Si/S implantation for application to microwave devices

To obtain highly conductive buried layers in InP:Fe, MeV energy Si, S, and Si/ Simplantations are performed at 200°C. The silicon and sulfer implants gave 85 and 100 percent activation, respectively, for a fluence of 8 × 10¹⁴ cm⁻². The Si/S co-implantation also gave almost 100 percent donor activation for a fluence of 8 × 10¹⁴ cm⁻² of each species. An improved silicon donor activation is observed in the Si/S co-implanted material compared to the material implanted with silicon alone. The peak carrier concentration achieved for the Si/S co-implant is 2 × 10¹⁹ cm³. The lattice damage on the surface side of the profile is effectively removed after rapid thermal annealing. Multiple-energy silicon and sulfur implantations are performed to obtain thick and buried n⁺ layers needed for microwave devices and also hyper-abrupt profiles needed for varactor diodes.     

具有多重焦点的波带透镜的设计

本文提出了一种新型的具有多重焦点的波带透镜的概念及其设计方法。可提供某些特定的光场分布,而且具有性能稳定、微型化和可实际制作等特点。     

用退火型神经网络估计多个非相干源的迭加正弦信号参量＊

基于模拟退火方法和线性规划神经网络,本文提出了一种新的参数估计方法——退火型神经网络计算方法,并将其应用于进行叠加正弦信号参量的估计,通过构造相应的模拟电路系统,该方法可获得估计问题的实时解。模拟实验结果显示了该神经网络方法进行平面波到达方向估计与跟踪的优良性能。     

一种新的体视对应方法

选择特征点作为匹配特征,采用视差估计方法,在满足一定匹配准则情况下,可以得到一约束最小化能量函数。模拟实验结果表明,使用模拟退火算法,可使能量函数达到全局最小,从而实现立体匹配。     

基于趋势分析的间歇过程异常工况超早期报警研究

为了实现化工间歇过程阶跃变化中异常工况的早期报警,重点监测过程参数的变化趋势,提出基于最小二乘法的拟合 微分 再微分的化工间歇过程趋势分析方法。采用最小二乘法对历史数据进行拟合,依据过程参数的变化趋势,将间歇过程分为3个阶段。对数据微分求导计算,根据得出的过程参数一阶变化率的取值区间进行间歇过程多时段工况识别,针对危险性较大的阶跃变化过程利用再微分计算过程参数的二阶变化率取值区间,结合滑动窗算法,实现连续的间歇过程异常工况早期报警监测。在聚丙烯装置异常工况早期预警案例分析中,以聚合釜升温过程中上温为目标参数,实时监测上温变化趋势,识别间歇过程工况,并且在上温升温速率过快但温度未超出分布式控制系统(Distributed control system, DCS)阈值时发出警报。结果表明,所提出方法能够在参数状态出现异常的早期发出警报,相比于3σ报警阈值的方法提前24 min 34 s报警。     

Defect state assisted tunneling in intermediate temperature molecular beam epitaxy grown GaAs

Current transport in molecular beam epitaxy (MBE) GaAs grown at low and intermediate growth temperatures is strongly affected by defects. A model is developed here that shows that tunneling assisted by defect states can dominate, at some bias ranges, current transport in Schottky contacts to unannealed GaAs material grown at the intermediate temperature range of about 400°C. The deep defect states are modeled by quantum wells which trap electrons emitted from the cathode before re-emission to semiconductor. Comparison of theory with experimental data shows defect states of energies about 0.5 eVbelow conduction band to provide the best fit to data. This suggests that arsenic interstitials are likely to mediate this conduction. Comparison is also made between as-grown material and GaAs grown at the same temperature but annealed at 600°C. It is suggested that reduction of these defects by thermal annealing can explain lower current conduction at high biases in the annealed device as well as higher current conduction at low biases due to higher lifetime. Quenching of current by light in the as-grown material can also be explained based on occupancy of trap states. Identification of this mechanism can lead to its utilization in making ohmic contacts, or its elimination by growing tunneling barrier layers.     

正己烷和乙酸乙酯间歇共沸精馏分离共沸剂的研究

正己烷和乙酸乙酯形成最低共沸物,采用间歇共沸精馏方法分离回收时,共沸剂的选择和用量直接影响实验效果。研究了正己烷-乙酸乙酯共沸物系间歇共沸精馏法分离适宜的共沸剂,并从理论上和实验中考察了共沸剂与原料适宜的配比。实验结果表明,丙酮为合适的共沸剂,当丙酮和正己烷的质量比为1.15时,正己烷和乙酸乙酯的收率最高,分别达75.15%和73.89%。通过实验绘制了正己烷-乙酸乙酯-丙酮三元物系的剩余曲线,确定了正己烷-乙酸乙酯共沸物系分离步骤:共沸精馏塔中馏出丙酮和正己烷的共沸物和高纯度的乙酸乙酯;萃取塔中用水萃取丙酮和正己烷的混合物得到较纯的正己烷;萃取后的丙酮水溶液由共沸剂精馏回收塔回收丙酮。     

工业稳定剂间歇过程计算机控制系统

介绍了1套由AB公司的第5代PLC——RSLogix5000和工业PC组成的工业稳定剂间歇过程计算机控制系统。较详细地介绍系统硬件、软件的构成，ControlNet现场总线网络通信的特点，OPC数据传输的优点。同时阐述了在系统硬件设计上如何保证硬件的安全性和抗干扰问题。运行结果表明。该控制系统具有维护简单、运行可靠性高、抗干扰能力强、传输数据速度快的特点。